JPS57153436A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57153436A
JPS57153436A JP56038508A JP3850881A JPS57153436A JP S57153436 A JPS57153436 A JP S57153436A JP 56038508 A JP56038508 A JP 56038508A JP 3850881 A JP3850881 A JP 3850881A JP S57153436 A JPS57153436 A JP S57153436A
Authority
JP
Japan
Prior art keywords
electrodes
passivation film
film
electrode
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56038508A
Other languages
Japanese (ja)
Inventor
Kiyoshi Ozawa
Yoshio Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56038508A priority Critical patent/JPS57153436A/en
Publication of JPS57153436A publication Critical patent/JPS57153436A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Abstract

PURPOSE:To obtain a stable protective film, which is easily treated, by forming a passivation film by amorphous Si;H containing a large number of bonds of Si and H2 when the passivation film is shaped onto an Al electrode exposed on the surface of the semiconductor device and an insulating film surrounding the electrode. CONSTITUTION:Semiconductor substrates 5 pasted on anode and cathode electrodes 4 are opposed at an interval in a plasma CVD device 1, SiH4 gas is fed in from an inflow port 3 while the inside of the device 1 is evacuated by using an exhaust port 2, and gas pressure is brought to 0.05-5Torr. The high-frequency voltage of several dozen W is applied between the electrodes 4 to generate glow discharge, and the passivation film consisting of Si;H is deposited onto the Al electrodes exposed on the surfaces of the substrates 5 and the insulating films surrounding the Al electrodes. Accordingly, the temperature of the substrate may be the normal temperature of 300 deg.C or lower, and the stable protective film can easily be obtained without exerting a bad influence on the electrical characteristics of an element.
JP56038508A 1981-03-17 1981-03-17 Semiconductor device Pending JPS57153436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56038508A JPS57153436A (en) 1981-03-17 1981-03-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56038508A JPS57153436A (en) 1981-03-17 1981-03-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57153436A true JPS57153436A (en) 1982-09-22

Family

ID=12527204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56038508A Pending JPS57153436A (en) 1981-03-17 1981-03-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57153436A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151432A (en) * 1983-02-18 1984-08-29 Toshiba Corp Semiconductor device
JPS6066422A (en) * 1983-09-21 1985-04-16 Kanegafuchi Chem Ind Co Ltd Manufacture of semiconductor
JPS63128726U (en) * 1987-02-16 1988-08-23

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151432A (en) * 1983-02-18 1984-08-29 Toshiba Corp Semiconductor device
JPS6066422A (en) * 1983-09-21 1985-04-16 Kanegafuchi Chem Ind Co Ltd Manufacture of semiconductor
JPS63128726U (en) * 1987-02-16 1988-08-23

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