JPS577116A - Manufacture of amorphous silicon thin film - Google Patents

Manufacture of amorphous silicon thin film

Info

Publication number
JPS577116A
JPS577116A JP8192980A JP8192980A JPS577116A JP S577116 A JPS577116 A JP S577116A JP 8192980 A JP8192980 A JP 8192980A JP 8192980 A JP8192980 A JP 8192980A JP S577116 A JPS577116 A JP S577116A
Authority
JP
Japan
Prior art keywords
thin film
substrate
depositing
container
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8192980A
Other languages
Japanese (ja)
Inventor
Takashi Suzuki
Koichi Shinohara
Yasuo Iijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8192980A priority Critical patent/JPS577116A/en
Publication of JPS577116A publication Critical patent/JPS577116A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To efficently form a thin film used for a solar battery, an electrophotograph, etc. by depositing Si in vacuum at a high speed with an electron beam as a heating source in the state that gas, e.g., hydrogen partly ionized exists in the vicinity of a substrate. CONSTITUTION:A substrate 3, e.g., glass plate or the like formed with a metallic plate or metallic film of aluminum or the like is secured by a support 4 in a container 2 evacuated by a pump 1. Pure Si 6 is filled in a crucible 5 provided below the substrate 3, an electron beam from an electron gun 7 is emitted to evaporate the Si, and is deposited on the substrate 3 at the maximum depositing speed, higher than 0.5mum/min. Hydrogen is, for example, introduced from a jet port 10 at the pressure of approx. 1.10<-5> Torr at the depositing time, and high frequency voltage is applied between the support 4 and the container 2. Impurity is added to the deposited thin film, for example, by mixing deping gas of PH3 or the like or adding in advance impurity in the Si. Thus, the semiconductor thin film can be formed at a high speed.
JP8192980A 1980-06-16 1980-06-16 Manufacture of amorphous silicon thin film Pending JPS577116A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8192980A JPS577116A (en) 1980-06-16 1980-06-16 Manufacture of amorphous silicon thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8192980A JPS577116A (en) 1980-06-16 1980-06-16 Manufacture of amorphous silicon thin film

Publications (1)

Publication Number Publication Date
JPS577116A true JPS577116A (en) 1982-01-14

Family

ID=13760149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8192980A Pending JPS577116A (en) 1980-06-16 1980-06-16 Manufacture of amorphous silicon thin film

Country Status (1)

Country Link
JP (1) JPS577116A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5996721A (en) * 1982-11-25 1984-06-04 Sekisui Chem Co Ltd Manufacture of thin film semiconductor
JPS5996718A (en) * 1982-11-25 1984-06-04 Sekisui Chem Co Ltd Manufacture of thin film semiconductor
JPS59102896A (en) * 1982-11-30 1984-06-14 Toshiba Corp Method for controlling shape of single crystal
CN106257156A (en) * 2015-06-19 2016-12-28 江苏正能电子科技有限公司 A kind of can the container of uniform heating solar silion cell slurry

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5996721A (en) * 1982-11-25 1984-06-04 Sekisui Chem Co Ltd Manufacture of thin film semiconductor
JPS5996718A (en) * 1982-11-25 1984-06-04 Sekisui Chem Co Ltd Manufacture of thin film semiconductor
JPH0131289B2 (en) * 1982-11-25 1989-06-26 Sekisui Chemical Co Ltd
JPS59102896A (en) * 1982-11-30 1984-06-14 Toshiba Corp Method for controlling shape of single crystal
JPH0416437B2 (en) * 1982-11-30 1992-03-24 Tokyo Shibaura Electric Co
CN106257156A (en) * 2015-06-19 2016-12-28 江苏正能电子科技有限公司 A kind of can the container of uniform heating solar silion cell slurry

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