JPS5651878A - Manufacture of mis composition amorphous silicon solar cell - Google Patents

Manufacture of mis composition amorphous silicon solar cell

Info

Publication number
JPS5651878A
JPS5651878A JP12817779A JP12817779A JPS5651878A JP S5651878 A JPS5651878 A JP S5651878A JP 12817779 A JP12817779 A JP 12817779A JP 12817779 A JP12817779 A JP 12817779A JP S5651878 A JPS5651878 A JP S5651878A
Authority
JP
Japan
Prior art keywords
layer
gas
solar cell
substrate
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12817779A
Other languages
Japanese (ja)
Inventor
Takeshige Ichimura
Akihiko Kitamura
Masahide Miyagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP12817779A priority Critical patent/JPS5651878A/en
Publication of JPS5651878A publication Critical patent/JPS5651878A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the metal-insulator-semiconductor type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To compose the MIS composition solar cell with good characteristics by producing glow discharge by inducing SiH4 gas in a vacuum chamber wherein gas is changed to O2 after procipitating a amorphous Si layer on an substrate and an SiO2 film is formed on the layer to obtain a clean film. CONSTITUTION:The amorphous Si layer 2 is grown on the substrate 1 made of stainless steel or the like and the surface layer section only is converted into an SiO2 layer 3. A metallic layer 4 is formed on the layer 3 to compose the MIS composition solar cell. Next, in making the solar cell, an electrode 8 carrying the substrate 1 is provided in a vacuum container 5 having an exhaust hole 6 and a gas inducing hole 7 and another electrode 9 is installed on the electrode 8 at certain intervals. The pressure in the container 5 is then kept at 1-5 Torr and SiH4 gas is sent to the container to produce glow discharge between the electrodes 8 and 9 and the amorphous Si layer 2 is precipitated on the substrate 1. PH3 is mixed in the gas at the initial stage during the above process and the PH3 is removed to form a stacking substance consisting of an N type layer and an intrinsic layer. The gas is then changed to O2 and the surface of the intrinsic layer only is converted into the an SiO2 film 3.
JP12817779A 1979-10-04 1979-10-04 Manufacture of mis composition amorphous silicon solar cell Pending JPS5651878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12817779A JPS5651878A (en) 1979-10-04 1979-10-04 Manufacture of mis composition amorphous silicon solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12817779A JPS5651878A (en) 1979-10-04 1979-10-04 Manufacture of mis composition amorphous silicon solar cell

Publications (1)

Publication Number Publication Date
JPS5651878A true JPS5651878A (en) 1981-05-09

Family

ID=14978312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12817779A Pending JPS5651878A (en) 1979-10-04 1979-10-04 Manufacture of mis composition amorphous silicon solar cell

Country Status (1)

Country Link
JP (1) JPS5651878A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58179593A (en) * 1982-04-14 1983-10-20 Hitachi Ltd Weld zone provided with notch
US4671494A (en) * 1984-03-23 1987-06-09 Hitachi, Ltd. Excessive load prevention apparatus employable for a hoist or the like
JPS6489568A (en) * 1987-09-30 1989-04-04 Sharp Kk Manufacture of semiconductor device
WO2009052511A2 (en) * 2007-10-18 2009-04-23 Belano Holdings, Ltd. Mono-silicon solar cells

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58179593A (en) * 1982-04-14 1983-10-20 Hitachi Ltd Weld zone provided with notch
JPH0228434B2 (en) * 1982-04-14 1990-06-25 Hitachi Ltd
US4671494A (en) * 1984-03-23 1987-06-09 Hitachi, Ltd. Excessive load prevention apparatus employable for a hoist or the like
JPS6489568A (en) * 1987-09-30 1989-04-04 Sharp Kk Manufacture of semiconductor device
WO2009052511A2 (en) * 2007-10-18 2009-04-23 Belano Holdings, Ltd. Mono-silicon solar cells
WO2009052511A3 (en) * 2007-10-18 2009-07-16 Belano Holdings Ltd Mono-silicon solar cells
US8349644B2 (en) 2007-10-18 2013-01-08 e-Cube Energy Technologies, Ltd. Mono-silicon solar cells

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