JPS57187973A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPS57187973A
JPS57187973A JP56072195A JP7219581A JPS57187973A JP S57187973 A JPS57187973 A JP S57187973A JP 56072195 A JP56072195 A JP 56072195A JP 7219581 A JP7219581 A JP 7219581A JP S57187973 A JPS57187973 A JP S57187973A
Authority
JP
Japan
Prior art keywords
particle diameter
average particle
case
fine crystal
whose average
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56072195A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Uchida
Masakazu Ueno
Shigeru Kobayashi
Takeshige Ichimura
Michio Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP56072195A priority Critical patent/JPS57187973A/en
Publication of JPS57187973A publication Critical patent/JPS57187973A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Abstract

PURPOSE:To improve conversion efficiency of a Si thin film solar cell and reduce the necessary material by composing a semiconductor layer for photoelectric conversion of fine crystal Si whose average particle diameter is not more than 100Angstrom . CONSTITUTION:A semiconductor layer for photoelectric conversion is composed of fine crystal Si whose average particle diameter is not more than 100Angstrom . Such fine crystal Si can be made grow on a substrate by decomposing mixed gas of SiH4 and H2 in plasma generated by DC or AC field. It is necessary to have the applied DC or AC power higher in such case than in the case of forming an amorphous Si film. The absorption coefficient for the light depends upon the size of the crystal particle diameter and it is important that the average particle diameter is not more than 100Angstrom . The light absorption coefficient for the light of 550nm which is near the peak of the radiation energy of the solar spectrum is 8X10<4>cm<-1> in the case of the amorphous Si and 4X 10<5>cm<-1> in the case of the fine crystal Si whose average particle diameter is not more than 100Angstrom and the decline is small, so that the necessary thickness is good enough to be about 2mum.
JP56072195A 1981-05-15 1981-05-15 Solar cell Pending JPS57187973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56072195A JPS57187973A (en) 1981-05-15 1981-05-15 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56072195A JPS57187973A (en) 1981-05-15 1981-05-15 Solar cell

Publications (1)

Publication Number Publication Date
JPS57187973A true JPS57187973A (en) 1982-11-18

Family

ID=13482188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56072195A Pending JPS57187973A (en) 1981-05-15 1981-05-15 Solar cell

Country Status (1)

Country Link
JP (1) JPS57187973A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150485A (en) * 1983-02-16 1984-08-28 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPS59194478A (en) * 1983-04-18 1984-11-05 Daihen Corp Photoelectric generating element and manufacture thereof
JPS60101979A (en) * 1983-11-07 1985-06-06 Daihen Corp Photovoltaic element
JPS60107872A (en) * 1983-11-16 1985-06-13 Kanegafuchi Chem Ind Co Ltd Photoelectromotive force device
US4594261A (en) * 1982-11-25 1986-06-10 Director-General Of Agency Of Industrial Science And Technology Method for producing thin film semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4594261A (en) * 1982-11-25 1986-06-10 Director-General Of Agency Of Industrial Science And Technology Method for producing thin film semiconductor device
JPS59150485A (en) * 1983-02-16 1984-08-28 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPS59194478A (en) * 1983-04-18 1984-11-05 Daihen Corp Photoelectric generating element and manufacture thereof
JPS60101979A (en) * 1983-11-07 1985-06-06 Daihen Corp Photovoltaic element
JPS60107872A (en) * 1983-11-16 1985-06-13 Kanegafuchi Chem Ind Co Ltd Photoelectromotive force device

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