JPS5739559A - Resin sealing method for ic - Google Patents

Resin sealing method for ic

Info

Publication number
JPS5739559A
JPS5739559A JP11426980A JP11426980A JPS5739559A JP S5739559 A JPS5739559 A JP S5739559A JP 11426980 A JP11426980 A JP 11426980A JP 11426980 A JP11426980 A JP 11426980A JP S5739559 A JPS5739559 A JP S5739559A
Authority
JP
Japan
Prior art keywords
sealing
mounting
resin
device hole
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11426980A
Other languages
Japanese (ja)
Inventor
Katsuji Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Original Assignee
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Holdings Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Holdings Co Ltd
Priority to JP11426980A priority Critical patent/JPS5739559A/en
Publication of JPS5739559A publication Critical patent/JPS5739559A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To increase the effective area of a flexible substrate and to mount an IC in high density by mounting a sealing frame smaller than a device hole for mounting the IC formed on the substrate in the device hole and sealing the IC with resin. CONSTITUTION:The device hole 18 for mounting the IC is opened at a flexible film 11, a copper foil is laminated, the finger 2b of a circuit substrate 10 and the bump 3a of the electrode of the IC3 are simultaneously thermally pressed and bonded to the pattern formed on the copper foil, and then a sealing frame 16 is placed on the finger 2b. Sealing resin 7 is filled from the resin inlet 16b, is heat treated, and is cured. In this manner, the sealing area of the IC can be reduced, and an electronic wrist watch can be reduced in size.
JP11426980A 1980-08-20 1980-08-20 Resin sealing method for ic Pending JPS5739559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11426980A JPS5739559A (en) 1980-08-20 1980-08-20 Resin sealing method for ic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11426980A JPS5739559A (en) 1980-08-20 1980-08-20 Resin sealing method for ic

Publications (1)

Publication Number Publication Date
JPS5739559A true JPS5739559A (en) 1982-03-04

Family

ID=14633573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11426980A Pending JPS5739559A (en) 1980-08-20 1980-08-20 Resin sealing method for ic

Country Status (1)

Country Link
JP (1) JPS5739559A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5109270A (en) * 1989-04-17 1992-04-28 Matsushita Electric Industrial Co., Ltd. High frequency semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5109270A (en) * 1989-04-17 1992-04-28 Matsushita Electric Industrial Co., Ltd. High frequency semiconductor device

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