JPS5618442A - Semiconductor ic - Google Patents

Semiconductor ic

Info

Publication number
JPS5618442A
JPS5618442A JP9370079A JP9370079A JPS5618442A JP S5618442 A JPS5618442 A JP S5618442A JP 9370079 A JP9370079 A JP 9370079A JP 9370079 A JP9370079 A JP 9370079A JP S5618442 A JPS5618442 A JP S5618442A
Authority
JP
Japan
Prior art keywords
insulating film
etching
contact hole
field insulating
prevented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9370079A
Other languages
Japanese (ja)
Inventor
Yukio Omori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9370079A priority Critical patent/JPS5618442A/en
Publication of JPS5618442A publication Critical patent/JPS5618442A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain an electrode lead-out portion of a high density by a method wherein an insulating film region of a different material is provided on a field insulating film and an over-etching when forming a contact hole is prevented. CONSTITUTION:The field insulating film 11 is formed on a semiconductor substrate 10, and on the field insulating film 11, where the contact hole is to be opened, a material having a different principal ingredient, for instance, an Si3N4 film 16 is coated. Then, a gate polycrystalline silicon layer 13 and an insulating film 14 are provided, an etching is performed and a contact hole 15 is opened. In this case, as the insulating film 16 is provided, the etching will come to a stop there and an over- etching can be prevented. Hence, the electrode lead-out portion with a high density can be obtained by making a very small hole 15.
JP9370079A 1979-07-25 1979-07-25 Semiconductor ic Pending JPS5618442A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9370079A JPS5618442A (en) 1979-07-25 1979-07-25 Semiconductor ic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9370079A JPS5618442A (en) 1979-07-25 1979-07-25 Semiconductor ic

Publications (1)

Publication Number Publication Date
JPS5618442A true JPS5618442A (en) 1981-02-21

Family

ID=14089671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9370079A Pending JPS5618442A (en) 1979-07-25 1979-07-25 Semiconductor ic

Country Status (1)

Country Link
JP (1) JPS5618442A (en)

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