JPS5618442A - Semiconductor ic - Google Patents
Semiconductor icInfo
- Publication number
- JPS5618442A JPS5618442A JP9370079A JP9370079A JPS5618442A JP S5618442 A JPS5618442 A JP S5618442A JP 9370079 A JP9370079 A JP 9370079A JP 9370079 A JP9370079 A JP 9370079A JP S5618442 A JPS5618442 A JP S5618442A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- etching
- contact hole
- field insulating
- prevented
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain an electrode lead-out portion of a high density by a method wherein an insulating film region of a different material is provided on a field insulating film and an over-etching when forming a contact hole is prevented. CONSTITUTION:The field insulating film 11 is formed on a semiconductor substrate 10, and on the field insulating film 11, where the contact hole is to be opened, a material having a different principal ingredient, for instance, an Si3N4 film 16 is coated. Then, a gate polycrystalline silicon layer 13 and an insulating film 14 are provided, an etching is performed and a contact hole 15 is opened. In this case, as the insulating film 16 is provided, the etching will come to a stop there and an over- etching can be prevented. Hence, the electrode lead-out portion with a high density can be obtained by making a very small hole 15.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9370079A JPS5618442A (en) | 1979-07-25 | 1979-07-25 | Semiconductor ic |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9370079A JPS5618442A (en) | 1979-07-25 | 1979-07-25 | Semiconductor ic |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5618442A true JPS5618442A (en) | 1981-02-21 |
Family
ID=14089671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9370079A Pending JPS5618442A (en) | 1979-07-25 | 1979-07-25 | Semiconductor ic |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5618442A (en) |
-
1979
- 1979-07-25 JP JP9370079A patent/JPS5618442A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5599744A (en) | Manufacture of semiconductor device | |
JPS57154855A (en) | Manufacture of semiconductor device | |
JPS5578532A (en) | Formation of electrode for semiconductor device | |
JPS56155531A (en) | Manufacture of semiconductor device | |
JPS5618442A (en) | Semiconductor ic | |
JPS56115557A (en) | Manufacture of semiconductor device | |
JPS54141585A (en) | Semiconductor integrated circuit device | |
JPS5627972A (en) | Manufacture of compound semiconductor device | |
JPS52124860A (en) | Electrode formation method for semiconductor devices | |
JPS572519A (en) | Manufacture of semiconductor device | |
JPS6472567A (en) | Manufacture of semiconductor device | |
JPS5515230A (en) | Semiconductor device and its manufacturing method | |
JPS55120170A (en) | Mos type semiconductor device | |
JPS5341986A (en) | Production of semiconductor unit | |
JPS54129983A (en) | Manufacture of semiconductor device | |
JPS5718362A (en) | Semiconductor device and manufacture thereof | |
JPS55148422A (en) | Manufacturing of semiconductor device | |
JPS5717129A (en) | Manufacture of semiconductor device | |
JPS52123878A (en) | Mos type semiconductor device and its production process | |
JPS553649A (en) | Semiconductor device production | |
JPS55157239A (en) | Manufacture of semiconductor device | |
JPS56146281A (en) | Manufacture of semiconductor integrated circuit | |
JPS5654059A (en) | Roduction of semiconductor device | |
JPS57102050A (en) | Manufacture of semiconductor device | |
JPS5763859A (en) | Preparation of semiconductor device |