JPS56135970A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56135970A
JPS56135970A JP3946580A JP3946580A JPS56135970A JP S56135970 A JPS56135970 A JP S56135970A JP 3946580 A JP3946580 A JP 3946580A JP 3946580 A JP3946580 A JP 3946580A JP S56135970 A JPS56135970 A JP S56135970A
Authority
JP
Japan
Prior art keywords
substrate
insulating film
region
conductive type
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3946580A
Other languages
Japanese (ja)
Inventor
Toshimoto Kodaira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP3946580A priority Critical patent/JPS56135970A/en
Publication of JPS56135970A publication Critical patent/JPS56135970A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To enable the high speed transition of an element to be easily obtained making a punch-through effect difficult to occur by a method wherein a region lower than a substrate in the equivalent impurity concentration is formed only under a drain diffused layer. CONSTITUTION:After an insulating film 2 is formed on a main surface of the semiconductor substrate 1 and coated with a resist 3, the part in the drain region of the insulating film 2 is etched. Then, an impurity 4 is implanted to the inside of the substrate in the region where the insulating film 2 is etched by an ion-implantation or the like. Then, after the removal of the resist 3, the drain diffused layer is formed on the substrate surface at the part where the insulating film 2 has been removed. The concentration of the impurity 4 is restrained within a range that conductive type of the region implanted is not made the conductive type opposite to the conductive type of the substrate 1.
JP3946580A 1980-03-27 1980-03-27 Semiconductor device Pending JPS56135970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3946580A JPS56135970A (en) 1980-03-27 1980-03-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3946580A JPS56135970A (en) 1980-03-27 1980-03-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56135970A true JPS56135970A (en) 1981-10-23

Family

ID=12553796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3946580A Pending JPS56135970A (en) 1980-03-27 1980-03-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56135970A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61241967A (en) * 1985-04-19 1986-10-28 Hitachi Ltd Semiconductor integrated circuit device
JPS62299079A (en) * 1986-06-18 1987-12-26 Nec Corp Mis field-effect transistor
EP0359530A2 (en) * 1988-09-15 1990-03-21 Advanced Micro Devices, Inc. Capacitive reduction of junctions in a semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52135685A (en) * 1976-05-10 1977-11-12 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52135685A (en) * 1976-05-10 1977-11-12 Nec Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61241967A (en) * 1985-04-19 1986-10-28 Hitachi Ltd Semiconductor integrated circuit device
JPS62299079A (en) * 1986-06-18 1987-12-26 Nec Corp Mis field-effect transistor
EP0359530A2 (en) * 1988-09-15 1990-03-21 Advanced Micro Devices, Inc. Capacitive reduction of junctions in a semiconductor device
EP0359530A3 (en) * 1988-09-15 1991-01-02 Advanced Micro Devices, Inc. Capacitive reduction of junctions in a semiconductor device

Similar Documents

Publication Publication Date Title
SE8103147L (en) SELECTIVE IMPLANATION METHOD FOR CMOS-P WELLS
JPS5687340A (en) Semiconductor device and manufacture thereof
JPS57196573A (en) Manufacture of mos type semiconductor device
JPS56135970A (en) Semiconductor device
JPS5688358A (en) Manufacture of semiconductor device
JPS5583267A (en) Method of fabricating semiconductor device
JPS56111264A (en) Manufacture of semiconductor device
JPS53126875A (en) Gate protecting device
JPS5670669A (en) Longitudinal semiconductor device
JPS5791537A (en) Manufacture of semiconductor device
JPS52129276A (en) Production of semiconductor device
JPS57153462A (en) Manufacture of semiconductor integrated circuit device
JPS56120141A (en) Semiconductor device
JPS5526637A (en) Manufacturing of semiconductor device
JPS57147249A (en) Manufacture of semiconductor integrated circuit
JPS54104782A (en) Mos type semiconductor device
JPS5329668A (en) Production of semiconductor device
JPS53119669A (en) Production of semiconductor device
JPS56115572A (en) Field effect transistor
JPS57194546A (en) Semiconductor device and manufacture thereof
JPS52103963A (en) Semiconductor device and its manufacturing method
JPS5539634A (en) Manufacture of semiconductor
JPS5791521A (en) Manufacture of semiconductor device
JPS56162876A (en) Manufacture of insulated gate type semiconductor device
JPS52155069A (en) Production of field effect control type semiconductor device