JPS51147250A - Treatment method of semiconductor substrate - Google Patents

Treatment method of semiconductor substrate

Info

Publication number
JPS51147250A
JPS51147250A JP50071588A JP7158875A JPS51147250A JP S51147250 A JPS51147250 A JP S51147250A JP 50071588 A JP50071588 A JP 50071588A JP 7158875 A JP7158875 A JP 7158875A JP S51147250 A JPS51147250 A JP S51147250A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
treatment method
substrate
treatment
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50071588A
Other languages
Japanese (ja)
Inventor
Hiromitsu Takeuchi
Takashi Yabu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50071588A priority Critical patent/JPS51147250A/en
Publication of JPS51147250A publication Critical patent/JPS51147250A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:Elimination of a defective layer on the surface of a substrate before the SiO2 is formed, by performing heat-treatment on a Si substrate in an inactive atmosphere containing hydrogen chloride before the surface of the substrate is provided with heat exidation treatment of form SiO2.
JP50071588A 1975-06-13 1975-06-13 Treatment method of semiconductor substrate Pending JPS51147250A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50071588A JPS51147250A (en) 1975-06-13 1975-06-13 Treatment method of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50071588A JPS51147250A (en) 1975-06-13 1975-06-13 Treatment method of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS51147250A true JPS51147250A (en) 1976-12-17

Family

ID=13464978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50071588A Pending JPS51147250A (en) 1975-06-13 1975-06-13 Treatment method of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS51147250A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61193456A (en) * 1985-02-21 1986-08-27 Toshiba Corp Manufacture of semiconductor element
JPH01297827A (en) * 1988-05-25 1989-11-30 Nec Corp Oxidization of semiconductor substrate and device therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61193456A (en) * 1985-02-21 1986-08-27 Toshiba Corp Manufacture of semiconductor element
JPH0380338B2 (en) * 1985-02-21 1991-12-24 Toshiba Kk
JPH01297827A (en) * 1988-05-25 1989-11-30 Nec Corp Oxidization of semiconductor substrate and device therefor

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees