JPS51147250A - Treatment method of semiconductor substrate - Google Patents
Treatment method of semiconductor substrateInfo
- Publication number
- JPS51147250A JPS51147250A JP50071588A JP7158875A JPS51147250A JP S51147250 A JPS51147250 A JP S51147250A JP 50071588 A JP50071588 A JP 50071588A JP 7158875 A JP7158875 A JP 7158875A JP S51147250 A JPS51147250 A JP S51147250A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- treatment method
- substrate
- treatment
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:Elimination of a defective layer on the surface of a substrate before the SiO2 is formed, by performing heat-treatment on a Si substrate in an inactive atmosphere containing hydrogen chloride before the surface of the substrate is provided with heat exidation treatment of form SiO2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50071588A JPS51147250A (en) | 1975-06-13 | 1975-06-13 | Treatment method of semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50071588A JPS51147250A (en) | 1975-06-13 | 1975-06-13 | Treatment method of semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51147250A true JPS51147250A (en) | 1976-12-17 |
Family
ID=13464978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50071588A Pending JPS51147250A (en) | 1975-06-13 | 1975-06-13 | Treatment method of semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51147250A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61193456A (en) * | 1985-02-21 | 1986-08-27 | Toshiba Corp | Manufacture of semiconductor element |
JPH01297827A (en) * | 1988-05-25 | 1989-11-30 | Nec Corp | Oxidization of semiconductor substrate and device therefor |
-
1975
- 1975-06-13 JP JP50071588A patent/JPS51147250A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61193456A (en) * | 1985-02-21 | 1986-08-27 | Toshiba Corp | Manufacture of semiconductor element |
JPH0380338B2 (en) * | 1985-02-21 | 1991-12-24 | Toshiba Kk | |
JPH01297827A (en) * | 1988-05-25 | 1989-11-30 | Nec Corp | Oxidization of semiconductor substrate and device therefor |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |