JPS57155772A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number: JPS57155772A
Authority: JP; Japan
Prior art keywords: film; type; polycrystal silicon; metal silicide; oxide film
Prior art date: 1981-03-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP4145781A

Other languages

English (en)

Other versions

JPS647509B2 (ja

Inventor

Tadashi Hirao

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsubishi Electric Corp

Original Assignee

Mitsubishi Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-03-20

Filing date

1981-03-20

Publication date

1982-09-25

1981-03-20 Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp

1981-03-20 Priority to JP4145781A priority Critical patent/JPS57155772A/ja

1982-09-25 Publication of JPS57155772A publication Critical patent/JPS57155772A/ja

1989-02-09 Publication of JPS647509B2 publication Critical patent/JPS647509B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title abstract 2
238000004519 manufacturing process Methods 0.000 title 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
229910052710 silicon Inorganic materials 0.000 abstract 4
239000010703 silicon Substances 0.000 abstract 4
239000002184 metal Substances 0.000 abstract 3
229910052751 metal Inorganic materials 0.000 abstract 3
150000004767 nitrides Chemical class 0.000 abstract 3
229910021332 silicide Inorganic materials 0.000 abstract 3
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 3
230000015572 biosynthetic process Effects 0.000 abstract 2
239000000758 substrate Substances 0.000 abstract 2
238000005530 etching Methods 0.000 abstract 1
238000005468 ion implantation Methods 0.000 abstract 1
229910052750 molybdenum Inorganic materials 0.000 abstract 1
230000003647 oxidation Effects 0.000 abstract 1
238000007254 oxidation reaction Methods 0.000 abstract 1
229910052763 palladium Inorganic materials 0.000 abstract 1
229910052697 platinum Inorganic materials 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Electrodes Of Semiconductors (AREA)
Bipolar Transistors (AREA)

JP4145781A 1981-03-20 1981-03-20 Manufacture of semiconductor device Granted JPS57155772A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP4145781A JPS57155772A (en)	1981-03-20	1981-03-20	Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP4145781A JPS57155772A (en)	1981-03-20	1981-03-20	Manufacture of semiconductor device

Publications (2)

Publication Number	Publication Date
JPS57155772A true JPS57155772A (en)	1982-09-25
JPS647509B2 JPS647509B2 (ja)	1989-02-09

Family

ID=12608897

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP4145781A Granted JPS57155772A (en)	1981-03-20	1981-03-20	Manufacture of semiconductor device

Country Status (1)

Country	Link
JP (1)	JPS57155772A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59132663A (ja) *	1983-01-19	1984-07-30	Mitsubishi Electric Corp	トランジスタ
JPS60103669A (ja) *	1983-11-10	1985-06-07	Mitsubishi Electric Corp	半導体装置とその製造方法
US4936928A (en) *	1985-11-27	1990-06-26	Raytheon Company	Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH03295612A (ja) *	1990-04-12	1991-12-26	Moriyama Kogyo Kk	コンクリート製中空製品の製造方法及びその成形型枠装置及びそれに使用する内型枠

1981
- 1981-03-20 JP JP4145781A patent/JPS57155772A/ja active Granted

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59132663A (ja) *	1983-01-19	1984-07-30	Mitsubishi Electric Corp	トランジスタ
JPS60103669A (ja) *	1983-11-10	1985-06-07	Mitsubishi Electric Corp	半導体装置とその製造方法
US4936928A (en) *	1985-11-27	1990-06-26	Raytheon Company	Semiconductor device

Also Published As

Publication number	Publication date
JPS647509B2 (ja)	1989-02-09

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