JPS55111129A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS55111129A JPS55111129A JP1883279A JP1883279A JPS55111129A JP S55111129 A JPS55111129 A JP S55111129A JP 1883279 A JP1883279 A JP 1883279A JP 1883279 A JP1883279 A JP 1883279A JP S55111129 A JPS55111129 A JP S55111129A
- Authority
- JP
- Japan
- Prior art keywords
- nitride film
- polycrystalline
- film
- overall surface
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To keep the surface of a Si nitride film of a semiconductor device in the clean condition and improve the adhesiveness against the electrode material by a method wherein an Si nitride film is formed in the comparatively late process after a polycrystalline Si layer is formed, and keep the Si nitride film to avoid the formation of a film on it by the high temperature treatment.
CONSTITUTION: After a p-type base region 23 is formed in an n-type Si substrate 21, an n-type polycrystalline Si 24 is formed on the overall surface by vapour growth. An Si nitride film 25 is selectively formed on it, and using it as a mask, the polycrystalline Si 24 is removed by etching. The overall surface is covered with an SiO2 film 26, and an Si nitride film 27 is formed at the bonding pad position. Then an emitter domain 28 is formed using the polycrystalline Si 24' as a diffusion source, and an ion implantation is performed to the overall surface. An SiO2 film 26 is etched and the Si nitride film 25 is removed, and a platinum silicide layer is formed at the place of the polycrystalline Si 24' and the exposed part of the base region. Then an emitter lead out electrode 29, a base lead out electrode 30, and a bonding pad electrode 31 on the Si nitride film 27 are formed as the multilayer construction of Ti-Pt-Au.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1883279A JPS55111129A (en) | 1979-02-20 | 1979-02-20 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1883279A JPS55111129A (en) | 1979-02-20 | 1979-02-20 | Manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55111129A true JPS55111129A (en) | 1980-08-27 |
Family
ID=11982529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1883279A Pending JPS55111129A (en) | 1979-02-20 | 1979-02-20 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55111129A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03238826A (en) * | 1990-02-15 | 1991-10-24 | Mitsubishi Electric Corp | Bipolar transistor and manufacture thereof |
-
1979
- 1979-02-20 JP JP1883279A patent/JPS55111129A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03238826A (en) * | 1990-02-15 | 1991-10-24 | Mitsubishi Electric Corp | Bipolar transistor and manufacture thereof |
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