JPS55111129A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS55111129A
JPS55111129A JP1883279A JP1883279A JPS55111129A JP S55111129 A JPS55111129 A JP S55111129A JP 1883279 A JP1883279 A JP 1883279A JP 1883279 A JP1883279 A JP 1883279A JP S55111129 A JPS55111129 A JP S55111129A
Authority
JP
Japan
Prior art keywords
nitride film
polycrystalline
film
overall surface
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1883279A
Other languages
Japanese (ja)
Inventor
Akira Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1883279A priority Critical patent/JPS55111129A/en
Publication of JPS55111129A publication Critical patent/JPS55111129A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To keep the surface of a Si nitride film of a semiconductor device in the clean condition and improve the adhesiveness against the electrode material by a method wherein an Si nitride film is formed in the comparatively late process after a polycrystalline Si layer is formed, and keep the Si nitride film to avoid the formation of a film on it by the high temperature treatment.
CONSTITUTION: After a p-type base region 23 is formed in an n-type Si substrate 21, an n-type polycrystalline Si 24 is formed on the overall surface by vapour growth. An Si nitride film 25 is selectively formed on it, and using it as a mask, the polycrystalline Si 24 is removed by etching. The overall surface is covered with an SiO2 film 26, and an Si nitride film 27 is formed at the bonding pad position. Then an emitter domain 28 is formed using the polycrystalline Si 24' as a diffusion source, and an ion implantation is performed to the overall surface. An SiO2 film 26 is etched and the Si nitride film 25 is removed, and a platinum silicide layer is formed at the place of the polycrystalline Si 24' and the exposed part of the base region. Then an emitter lead out electrode 29, a base lead out electrode 30, and a bonding pad electrode 31 on the Si nitride film 27 are formed as the multilayer construction of Ti-Pt-Au.
COPYRIGHT: (C)1980,JPO&Japio
JP1883279A 1979-02-20 1979-02-20 Manufacturing method of semiconductor device Pending JPS55111129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1883279A JPS55111129A (en) 1979-02-20 1979-02-20 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1883279A JPS55111129A (en) 1979-02-20 1979-02-20 Manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55111129A true JPS55111129A (en) 1980-08-27

Family

ID=11982529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1883279A Pending JPS55111129A (en) 1979-02-20 1979-02-20 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55111129A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03238826A (en) * 1990-02-15 1991-10-24 Mitsubishi Electric Corp Bipolar transistor and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03238826A (en) * 1990-02-15 1991-10-24 Mitsubishi Electric Corp Bipolar transistor and manufacture thereof

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