JPS56126957A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56126957A JPS56126957A JP2976780A JP2976780A JPS56126957A JP S56126957 A JPS56126957 A JP S56126957A JP 2976780 A JP2976780 A JP 2976780A JP 2976780 A JP2976780 A JP 2976780A JP S56126957 A JPS56126957 A JP S56126957A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- projected
- oxide film
- electrode
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000000694 effects Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent the short channel effect and to reduce the wiring resistance of a semiconductor device by forming a gate electrode projected at the center and forming source, drain and wiring layer with the projected gate as a mask. CONSTITUTION:After a field oxide film 2 is formed on a P type Si substrate 1, an Si oxide film 3', a polycrystalline Si layer 4' and an Si oxide film 7' are formed thereon. An Si oxide film mask 7 and a temporary gate electrode 4 are formed by selectively etching with a photoresist film mask 8. Then, the mask 7 is etched from the side surface to reduce the width of the mask 7 as a mask 71. At this time the film 3' is simultaneously etched to become a gate oxide film 3. Then, with the mask 71 as a mask the periphery is projected at the side of the substrate 1, the central region is retained, and a projected gate electrode 41 is formed thereat. Subsequently, with the electrode 41 as a mask an ion implantation is conducted to simultaneously form a source region 5, a drain region 6 and a wiring region 9. Consequently, the projected lower edge of the electrode 41 is reduced in the depth of diffusion, thereby preventing the short channel effect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2976780A JPS56126957A (en) | 1980-03-11 | 1980-03-11 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2976780A JPS56126957A (en) | 1980-03-11 | 1980-03-11 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56126957A true JPS56126957A (en) | 1981-10-05 |
Family
ID=12285188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2976780A Pending JPS56126957A (en) | 1980-03-11 | 1980-03-11 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56126957A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58200576A (en) * | 1982-05-18 | 1983-11-22 | Oki Electric Ind Co Ltd | Mos type field effect transistor and manufacture thereof |
| US4978626A (en) * | 1988-09-02 | 1990-12-18 | Motorola, Inc. | LDD transistor process having doping sensitive endpoint etching |
| JP2007216262A (en) * | 2006-02-16 | 2007-08-30 | Nippon Steel Corp | Device and method for attaching/detaching in-mold electromagnetic stirring device |
-
1980
- 1980-03-11 JP JP2976780A patent/JPS56126957A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58200576A (en) * | 1982-05-18 | 1983-11-22 | Oki Electric Ind Co Ltd | Mos type field effect transistor and manufacture thereof |
| JPH058571B2 (en) * | 1982-05-18 | 1993-02-02 | Oki Electric Ind Co Ltd | |
| US4978626A (en) * | 1988-09-02 | 1990-12-18 | Motorola, Inc. | LDD transistor process having doping sensitive endpoint etching |
| JP2007216262A (en) * | 2006-02-16 | 2007-08-30 | Nippon Steel Corp | Device and method for attaching/detaching in-mold electromagnetic stirring device |
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