JPS57127989A - Mos static type ram - Google Patents
Mos static type ramInfo
- Publication number
- JPS57127989A JPS57127989A JP56012960A JP1296081A JPS57127989A JP S57127989 A JPS57127989 A JP S57127989A JP 56012960 A JP56012960 A JP 56012960A JP 1296081 A JP1296081 A JP 1296081A JP S57127989 A JPS57127989 A JP S57127989A
- Authority
- JP
- Japan
- Prior art keywords
- pair
- data lines
- common data
- selection
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56012960A JPS57127989A (en) | 1981-02-02 | 1981-02-02 | Mos static type ram |
FR8123989A FR2499291B1 (fr) | 1981-02-02 | 1981-12-22 | Memoire statique |
GB8201423A GB2092403B (en) | 1981-02-02 | 1982-01-19 | A static memory |
US06/343,590 US4507759A (en) | 1981-02-02 | 1982-01-28 | Static memory |
IT19387/82A IT1149530B (it) | 1981-02-02 | 1982-02-01 | Struttura di memoria statica |
DE19823203417 DE3203417A1 (de) | 1981-02-02 | 1982-02-02 | Statischer speicher |
SG203/86A SG20386G (en) | 1981-02-02 | 1986-03-03 | A static memory |
HK545/86A HK54586A (en) | 1981-02-02 | 1986-07-24 | A static memory |
MY547/86A MY8600547A (en) | 1981-02-02 | 1986-12-30 | A static memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56012960A JPS57127989A (en) | 1981-02-02 | 1981-02-02 | Mos static type ram |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62297583A Division JPS63171495A (ja) | 1987-11-27 | 1987-11-27 | Ramのセンス方式 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57127989A true JPS57127989A (en) | 1982-08-09 |
JPH0241113B2 JPH0241113B2 (ja) | 1990-09-14 |
Family
ID=11819819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56012960A Granted JPS57127989A (en) | 1981-02-02 | 1981-02-02 | Mos static type ram |
Country Status (9)
Country | Link |
---|---|
US (1) | US4507759A (ja) |
JP (1) | JPS57127989A (ja) |
DE (1) | DE3203417A1 (ja) |
FR (1) | FR2499291B1 (ja) |
GB (1) | GB2092403B (ja) |
HK (1) | HK54586A (ja) |
IT (1) | IT1149530B (ja) |
MY (1) | MY8600547A (ja) |
SG (1) | SG20386G (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5975495A (ja) * | 1982-10-22 | 1984-04-28 | Hitachi Ltd | Eprom装置における読出し回路 |
JPS6043294A (ja) * | 1983-08-18 | 1985-03-07 | Toshiba Corp | 半導体メモリ装置 |
JPS60254488A (ja) * | 1984-05-30 | 1985-12-16 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS613390A (ja) * | 1984-06-15 | 1986-01-09 | Hitachi Ltd | 記憶装置 |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57186289A (en) * | 1981-05-13 | 1982-11-16 | Hitachi Ltd | Semiconductor memory |
US5119332A (en) * | 1981-05-13 | 1992-06-02 | Hitachi, Ltd. | Semiconductor memory |
JPS58203694A (ja) * | 1982-05-21 | 1983-11-28 | Nec Corp | メモリ回路 |
EP0323876B1 (en) * | 1983-09-21 | 1992-11-11 | THORN EMI North America Inc. | Bit line load and column circuitry for a semiconductor memory |
US4791613A (en) * | 1983-09-21 | 1988-12-13 | Inmos Corporation | Bit line and column circuitry used in a semiconductor memory |
JPH0795395B2 (ja) * | 1984-02-13 | 1995-10-11 | 株式会社日立製作所 | 半導体集積回路 |
US4694429A (en) * | 1984-11-29 | 1987-09-15 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US4649301A (en) * | 1985-01-07 | 1987-03-10 | Thomson Components-Mostek Corp. | Multiple-input sense amplifier with two CMOS differential stages driving a high-gain stage |
JPS621189A (ja) * | 1985-03-18 | 1987-01-07 | Nec Corp | Mosメモリ回路 |
CA1258320A (en) * | 1985-04-01 | 1989-08-08 | Madhukar B. Vora | Small contactless ram cell |
DE3680371D1 (de) * | 1985-04-10 | 1991-08-29 | Nec Corp | Speicher mit auswaehlbarer wortlaenge. |
JPS6247897A (ja) * | 1985-08-28 | 1987-03-02 | Sony Corp | 読み出し増幅器 |
US4685086A (en) * | 1985-11-14 | 1987-08-04 | Thomson Components-Mostek Corp. | Memory cell leakage detection circuit |
US4805148A (en) * | 1985-11-22 | 1989-02-14 | Diehl Nagle Sherra E | High impendance-coupled CMOS SRAM for improved single event immunity |
US4905189B1 (en) * | 1985-12-18 | 1993-06-01 | System for reading and writing information | |
JPS62197990A (ja) * | 1986-02-25 | 1987-09-01 | Mitsubishi Electric Corp | 半導体記憶回路 |
US5165039A (en) * | 1986-03-28 | 1992-11-17 | Texas Instruments Incorporated | Register file for bit slice processor with simultaneous accessing of plural memory array cells |
EP0257912A3 (en) * | 1986-08-29 | 1989-08-23 | Kabushiki Kaisha Toshiba | Static semiconductor memory device |
JPS6376192A (ja) * | 1986-09-19 | 1988-04-06 | Fujitsu Ltd | 半導体記憶装置 |
FR2608861A1 (fr) * | 1986-12-23 | 1988-06-24 | Labo Electronique Physique | Circuit amplificateur de lecture pour une memoire ram statique |
KR900006293B1 (ko) * | 1987-06-20 | 1990-08-27 | 삼성전자 주식회사 | 씨모오스 디램의 데이터 전송회로 |
EP0320556B1 (en) * | 1987-12-15 | 1991-02-27 | International Business Machines Corporation | Improved reference voltage generator for cmos memories |
JPH0766945B2 (ja) * | 1988-09-06 | 1995-07-19 | 株式会社東芝 | スタティック型メモリ |
JPH0817034B2 (ja) * | 1988-10-24 | 1996-02-21 | 三菱電機株式会社 | 半導体記憶装置 |
KR920010345B1 (ko) * | 1990-06-30 | 1992-11-27 | 삼성전자 주식회사 | 선충전수단을 구비한 라이트 드라이버(write driver) |
US5325338A (en) * | 1991-09-04 | 1994-06-28 | Advanced Micro Devices, Inc. | Dual port memory, such as used in color lookup tables for video systems |
JPH06162776A (ja) * | 1992-11-18 | 1994-06-10 | Nec Corp | 半導体メモリ回路 |
JPH07147086A (ja) * | 1993-11-02 | 1995-06-06 | Nec Corp | ダイナミック型半導体記憶装置 |
KR100439039B1 (ko) * | 2002-09-09 | 2004-07-03 | 삼성전자주식회사 | 반도체 메모리 장치 및 이 장치의 센스 증폭기 |
US7027346B2 (en) * | 2003-01-06 | 2006-04-11 | Texas Instruments Incorporated | Bit line control for low power in standby |
EP1607931B1 (en) | 2003-03-26 | 2014-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Device substrate and light-emitting device |
JP4562997B2 (ja) | 2003-03-26 | 2010-10-13 | 株式会社半導体エネルギー研究所 | 素子基板及び発光装置 |
US7248508B1 (en) * | 2006-01-11 | 2007-07-24 | Arm Limited | Data retention in a semiconductor memory |
JP5178182B2 (ja) * | 2007-12-25 | 2013-04-10 | 株式会社東芝 | 半導体記憶装置 |
GB2515098B (en) * | 2013-06-14 | 2016-02-03 | Jaguar Land Rover Ltd | Speaker device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5352325A (en) * | 1976-10-25 | 1978-05-12 | Toshiba Corp | Mos random access memory |
JPS55129994A (en) * | 1979-03-26 | 1980-10-08 | Nec Corp | Semiconductor memory device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5472691A (en) * | 1977-11-21 | 1979-06-11 | Toshiba Corp | Semiconductor device |
US4272834A (en) * | 1978-10-06 | 1981-06-09 | Hitachi, Ltd. | Data line potential setting circuit and MIS memory circuit using the same |
JPS5570993A (en) * | 1978-11-24 | 1980-05-28 | Hitachi Ltd | Memory circuit |
-
1981
- 1981-02-02 JP JP56012960A patent/JPS57127989A/ja active Granted
- 1981-12-22 FR FR8123989A patent/FR2499291B1/fr not_active Expired
-
1982
- 1982-01-19 GB GB8201423A patent/GB2092403B/en not_active Expired
- 1982-01-28 US US06/343,590 patent/US4507759A/en not_active Expired - Lifetime
- 1982-02-01 IT IT19387/82A patent/IT1149530B/it active
- 1982-02-02 DE DE19823203417 patent/DE3203417A1/de not_active Withdrawn
-
1986
- 1986-03-03 SG SG203/86A patent/SG20386G/en unknown
- 1986-07-24 HK HK545/86A patent/HK54586A/xx not_active IP Right Cessation
- 1986-12-30 MY MY547/86A patent/MY8600547A/xx unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5352325A (en) * | 1976-10-25 | 1978-05-12 | Toshiba Corp | Mos random access memory |
JPS55129994A (en) * | 1979-03-26 | 1980-10-08 | Nec Corp | Semiconductor memory device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5975495A (ja) * | 1982-10-22 | 1984-04-28 | Hitachi Ltd | Eprom装置における読出し回路 |
JPS6043294A (ja) * | 1983-08-18 | 1985-03-07 | Toshiba Corp | 半導体メモリ装置 |
JPS60254488A (ja) * | 1984-05-30 | 1985-12-16 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS613390A (ja) * | 1984-06-15 | 1986-01-09 | Hitachi Ltd | 記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
US4507759A (en) | 1985-03-26 |
GB2092403B (en) | 1984-08-01 |
SG20386G (en) | 1987-03-27 |
DE3203417A1 (de) | 1982-08-12 |
FR2499291B1 (fr) | 1986-12-05 |
FR2499291A1 (fr) | 1982-08-06 |
GB2092403A (en) | 1982-08-11 |
IT8219387A0 (it) | 1982-02-01 |
HK54586A (en) | 1986-08-01 |
JPH0241113B2 (ja) | 1990-09-14 |
MY8600547A (en) | 1986-12-31 |
IT1149530B (it) | 1986-12-03 |
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