JPS57176595A - E-prom write-in circuit - Google Patents

E-prom write-in circuit

Info

Publication number
JPS57176595A
JPS57176595A JP6120881A JP6120881A JPS57176595A JP S57176595 A JPS57176595 A JP S57176595A JP 6120881 A JP6120881 A JP 6120881A JP 6120881 A JP6120881 A JP 6120881A JP S57176595 A JPS57176595 A JP S57176595A
Authority
JP
Japan
Prior art keywords
memory element
current
drain voltage
channel leakage
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6120881A
Other languages
Japanese (ja)
Inventor
Jun Sugiura
Minoru Fukuda
Kazuhiro Komori
Shigeru Yamatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6120881A priority Critical patent/JPS57176595A/en
Publication of JPS57176595A publication Critical patent/JPS57176595A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To obtain suitable write even if the channel length of a memory element is dispersed, by detecting a channel leakage current of a memory element and controlling a drain voltage of the actual memory element with this detected output. CONSTITUTION:Taking a channel leakage current of a memory element 1 as, e.g., 5muA per one memory element, a current limit MOS transistor (TR) 6 limits the current to 5muA, and the threshold voltage Vth7 of a current limit MOS TR 7 is increased. The gate voltage of the TR 7 becomes (V1+Vth7) (where; V1 is a drain voltage of a reference memory element 8), a shift by a current amplifying MOS TR 3 is compensated and the drain voltage V3 of the element 1 becomes V3=V1. Thus, the channel leakage of the element 1 is detected and the drain voltage of actual memory elements is controlled with the magnitude of the channel leakage current. Then, even if the processing of channel length of the memory elements is dispersed, suitable write-in can be achieved.
JP6120881A 1981-04-24 1981-04-24 E-prom write-in circuit Pending JPS57176595A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6120881A JPS57176595A (en) 1981-04-24 1981-04-24 E-prom write-in circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6120881A JPS57176595A (en) 1981-04-24 1981-04-24 E-prom write-in circuit

Publications (1)

Publication Number Publication Date
JPS57176595A true JPS57176595A (en) 1982-10-29

Family

ID=13164537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6120881A Pending JPS57176595A (en) 1981-04-24 1981-04-24 E-prom write-in circuit

Country Status (1)

Country Link
JP (1) JPS57176595A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6070597A (en) * 1983-09-28 1985-04-22 Toshiba Corp Non-volatile semiconductor storage device
JPS6163999A (en) * 1984-02-21 1986-04-02 ガスト　パ−ルゴス Apparatus for programming eprom and eeprom
JPH0249296A (en) * 1988-08-10 1990-02-19 Fujitsu Ltd Nonvolatile semiconductor memory

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6070597A (en) * 1983-09-28 1985-04-22 Toshiba Corp Non-volatile semiconductor storage device
JPH0519239B2 (en) * 1983-09-28 1993-03-16 Tokyo Shibaura Electric Co
JPS6163999A (en) * 1984-02-21 1986-04-02 ガスト　パ−ルゴス Apparatus for programming eprom and eeprom
JPH0249296A (en) * 1988-08-10 1990-02-19 Fujitsu Ltd Nonvolatile semiconductor memory

Similar Documents

Publication Publication Date Title
JPS5413779A (en) Semiconductor integrated circuit device
JPS57127989A (en) Mos static type ram
JPS5693173A (en) Decoder circuit
JPS57176595A (en) E-prom write-in circuit
JPS5733493A (en) Semiconductor storage device
JPS52117586A (en) Semiconductor device
JPS5347953A (en) Reference voltage circuit
JPS54107246A (en) Analogue switch and sample hold circuit using it
JPS5760711A (en) Differential amplifier
JPS56110334A (en) Input detection circuit
JPS5358780A (en) Field effect type transistor
JPS5378782A (en) Transmission characteristic variable mos semiconductor device
JPS52123179A (en) Mos type semiconductor device and its production
JPS5730371A (en) Manufacture of insulated gate type field effect transistor
JPS54153539A (en) Semiconductor integrated circuit device
JPS547149A (en) Constant current circuit
JPS5760585A (en) Memory device
JPS5557160A (en) Heat resistance measuring method for field effect transistor
JPS53120237A (en) Semiconductor amplifier circuit
JPS56118373A (en) Semiconductor integrated circuit
JPS5750106A (en) Transistor circuit
JPS57135525A (en) Semiconductor device
JPS5371573A (en) Field effect transistor of isolating gate type
JPS6444058A (en) Semiconductor integrated circuit device
JPS5359846A (en) Constant voltage circuit