JPS57120332A - Selectively diffusing method for semiconductor substrate - Google Patents
Selectively diffusing method for semiconductor substrateInfo
- Publication number
- JPS57120332A JPS57120332A JP706081A JP706081A JPS57120332A JP S57120332 A JPS57120332 A JP S57120332A JP 706081 A JP706081 A JP 706081A JP 706081 A JP706081 A JP 706081A JP S57120332 A JPS57120332 A JP S57120332A
- Authority
- JP
- Japan
- Prior art keywords
- region
- diffused
- diffusion
- substrate
- grooves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2233—Diffusion into or out of AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To secure the diffusion to the desired region in a semiconductor substrate and to enhance the yield by isolating the surface of the substrate with grooves formed into the first and the second regions, covering the surface of the second region and the slots with diffusing mask to diffuse only in the exposed first region. CONSTITUTION:Grooves 14 are formed by etching on the surface of an N type GaP substrate 11, and the substrate 11 is isolated into the first region 12 to be diffused with diffusing substance later and the region 13 not necessary for the diffusion around the region 12. At this time the depth of the grooves 14 is formed deeper than the later diffusion depth. A diffusion mask 15 made of Si3N2 is covered from the side wall of the groove 14 to the non-diffused region 13. Thereafter, Zn is diffused by a sealing method in the first region 12 exposed later to obtain the desired P type region. In this manner, only the desired region can be diffused.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP706081A JPS57120332A (en) | 1981-01-19 | 1981-01-19 | Selectively diffusing method for semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP706081A JPS57120332A (en) | 1981-01-19 | 1981-01-19 | Selectively diffusing method for semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57120332A true JPS57120332A (en) | 1982-07-27 |
Family
ID=11655515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP706081A Pending JPS57120332A (en) | 1981-01-19 | 1981-01-19 | Selectively diffusing method for semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57120332A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4826182A (en) * | 1971-08-09 | 1973-04-05 |
-
1981
- 1981-01-19 JP JP706081A patent/JPS57120332A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4826182A (en) * | 1971-08-09 | 1973-04-05 |
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