JPS5688320A - Gas etching method - Google Patents

Gas etching method

Info

Publication number
JPS5688320A
JPS5688320A JP16653279A JP16653279A JPS5688320A JP S5688320 A JPS5688320 A JP S5688320A JP 16653279 A JP16653279 A JP 16653279A JP 16653279 A JP16653279 A JP 16653279A JP S5688320 A JPS5688320 A JP S5688320A
Authority
JP
Japan
Prior art keywords
silicic acid
film
acid glass
glass film
etching method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16653279A
Other languages
Japanese (ja)
Inventor
Hiroshi Yano
Seiichi Yoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16653279A priority Critical patent/JPS5688320A/en
Publication of JPS5688320A publication Critical patent/JPS5688320A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Abstract

PURPOSE:To stabilize the formation of a semiconductor devide and to improve the quality thereof, by blowing hydrogen fluoride gas on phosphorus silicic acid glass film formed on a substrate thereby etching the film. CONSTITUTION:Hydrogen fluoride gas is blown from the above on the phosphorus silicic acid glass film formed on the SiO2 substrate with a resist film as a mask, and the phosphorus silicic acid glass film is etched without etching the SiO2 film. By this method, the stable patterning is performed, and the quality of the semiconductor device can be improved.
JP16653279A 1979-12-21 1979-12-21 Gas etching method Pending JPS5688320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16653279A JPS5688320A (en) 1979-12-21 1979-12-21 Gas etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16653279A JPS5688320A (en) 1979-12-21 1979-12-21 Gas etching method

Publications (1)

Publication Number Publication Date
JPS5688320A true JPS5688320A (en) 1981-07-17

Family

ID=15833032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16653279A Pending JPS5688320A (en) 1979-12-21 1979-12-21 Gas etching method

Country Status (1)

Country Link
JP (1) JPS5688320A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4973379A (en) * 1988-12-21 1990-11-27 Board Of Regents, The University Of Texas System Method of aerosol jet etching
JPH03204930A (en) * 1989-10-02 1991-09-06 Dainippon Screen Mfg Co Ltd Method of selectively removing insulating film
WO1991017967A1 (en) * 1990-05-15 1991-11-28 Semitool, Inc. Dynamic semiconductor wafer processing using homogeneous chemical vapors
US5073232A (en) * 1988-07-20 1991-12-17 Hashimoto Chemical Industries Co., Ltd. Method of anhydrous hydrogen fluoride etching
US5238500A (en) * 1990-05-15 1993-08-24 Semitool, Inc. Aqueous hydrofluoric and hydrochloric acid vapor processing of semiconductor wafers
US5658417A (en) * 1992-12-08 1997-08-19 Nec Corporation HF vapor selective etching method and apparatus
US5954911A (en) * 1995-10-12 1999-09-21 Semitool, Inc. Semiconductor processing using vapor mixtures
WO2008156176A1 (en) * 2007-06-20 2008-12-24 Asahi Glass Company, Limited Method for treatment of surface of oxide glass with fluorinating agent

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US5073232A (en) * 1988-07-20 1991-12-17 Hashimoto Chemical Industries Co., Ltd. Method of anhydrous hydrogen fluoride etching
US5100495A (en) * 1988-07-20 1992-03-31 Hashimoto Chemical Industries Co., Ltd. Dry etching apparatus with diluted anhydrous hydrogen fluoride gas generator
US4973379A (en) * 1988-12-21 1990-11-27 Board Of Regents, The University Of Texas System Method of aerosol jet etching
JPH03204930A (en) * 1989-10-02 1991-09-06 Dainippon Screen Mfg Co Ltd Method of selectively removing insulating film
WO1991017967A1 (en) * 1990-05-15 1991-11-28 Semitool, Inc. Dynamic semiconductor wafer processing using homogeneous chemical vapors
US5232511A (en) * 1990-05-15 1993-08-03 Semitool, Inc. Dynamic semiconductor wafer processing using homogeneous mixed acid vapors
US5238500A (en) * 1990-05-15 1993-08-24 Semitool, Inc. Aqueous hydrofluoric and hydrochloric acid vapor processing of semiconductor wafers
US5658417A (en) * 1992-12-08 1997-08-19 Nec Corporation HF vapor selective etching method and apparatus
US6024888A (en) * 1992-12-08 2000-02-15 Nec Corporation Vapor selective etching method and apparatus
US5954911A (en) * 1995-10-12 1999-09-21 Semitool, Inc. Semiconductor processing using vapor mixtures
WO2008156176A1 (en) * 2007-06-20 2008-12-24 Asahi Glass Company, Limited Method for treatment of surface of oxide glass with fluorinating agent
JPWO2008156177A1 (en) * 2007-06-20 2010-08-26 旭硝子株式会社 Oxide glass surface treatment method
JPWO2008156176A1 (en) * 2007-06-20 2010-08-26 旭硝子株式会社 Surface treatment method of oxide glass with fluorinating agent
JP5343849B2 (en) * 2007-06-20 2013-11-13 旭硝子株式会社 Oxide glass surface treatment method
JP5359871B2 (en) * 2007-06-20 2013-12-04 旭硝子株式会社 Surface treatment method of oxide glass with fluorinating agent
US8656735B2 (en) 2007-06-20 2014-02-25 Asahi Glass Company, Limited Method for treating surface of oxide glass with fluorinating agent

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