JPS5475275A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5475275A
JPS5475275A JP14318677A JP14318677A JPS5475275A JP S5475275 A JPS5475275 A JP S5475275A JP 14318677 A JP14318677 A JP 14318677A JP 14318677 A JP14318677 A JP 14318677A JP S5475275 A JPS5475275 A JP S5475275A
Authority
JP
Japan
Prior art keywords
film
poly
etching
thin
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14318677A
Other languages
Japanese (ja)
Inventor
Hajime Kamioka
Shuichi Miyamoto
Chiaki Terada
Kunio Abe
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14318677A priority Critical patent/JPS5475275A/en
Publication of JPS5475275A publication Critical patent/JPS5475275A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To ensure the assured lift-off even with the thin resist film by using the resist film and poly Si film together, and thus to secure the remains of the uniform poly Si thin film even with etching of the poly Si.
CONSTITUTION: The opening is provided to SiO2 on Si substrate 1 to form poly Si thin film 1', and then poly Si1', SiO22' and poly Si1" are formed continuously through the CVD method. The gas etching is given via CF4 after formation of resist mask 3, and the etching is stopped at film 2'. Thin film 2' is then removed by being soaked into the HF-group solution. Then Al electrode 4 is evaporated, and film 3 is fused to lift off film 4. And the plasma etching is applied to film 1", 2' and 1' respectively via mask 4.
COPYRIGHT: (C)1979,JPO&Japio
JP14318677A 1977-11-29 1977-11-29 Manufacture of semiconductor device Pending JPS5475275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14318677A JPS5475275A (en) 1977-11-29 1977-11-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14318677A JPS5475275A (en) 1977-11-29 1977-11-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5475275A true JPS5475275A (en) 1979-06-15

Family

ID=15332871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14318677A Pending JPS5475275A (en) 1977-11-29 1977-11-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5475275A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958012U (en) * 1982-10-08 1984-04-16 トヨタ自動車株式会社 Filter device in fuel tank
JPS618955A (en) * 1984-06-22 1986-01-16 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン Method of forming metal contact in semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958012U (en) * 1982-10-08 1984-04-16 トヨタ自動車株式会社 Filter device in fuel tank
JPS618955A (en) * 1984-06-22 1986-01-16 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン Method of forming metal contact in semiconductor device
JPH0312767B2 (en) * 1984-06-22 1991-02-21 Intaanashonaru Bijinesu Mashiinzu Corp

Similar Documents

Publication Publication Date Title
JPS5775429A (en) Manufacture of semiconductor device
JPS5475275A (en) Manufacture of semiconductor device
JPS5797626A (en) Manufacture of semiconductor device
JPS5772333A (en) Manufacture of semiconductor device
JPS57130431A (en) Manufacture of semiconductor device
JPS5591130A (en) Production of semiconductor device
JPS56100420A (en) Plasma etching method for oxidized silicon film
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS5476069A (en) Manufacture of semiconductor device
JPS56148825A (en) Manufacture of semiconductor device
JPS56111241A (en) Preparation of semiconductor device
JPS57124443A (en) Forming method for electrode layer
JPS5633841A (en) Manufacture of semiconductor device
JPS5443466A (en) Electrode formation method for semiconductor device
JPS54162460A (en) Electrode forming method
JPS57102010A (en) Manufacture of semiconductor device
JPS547867A (en) Manufacture for semiconductor device
JPS5455378A (en) Production of semiconductor device
JPS5717129A (en) Manufacture of semiconductor device
JPS5587439A (en) Manufacture of semiconductor device
JPS5637649A (en) Manufacturing of semiconductor device
JPS551132A (en) Dry etching
JPS57176764A (en) Manufacture of semiconductor device
JPS5477587A (en) Production of semiconductor device
JPS5483783A (en) Manufacture of semiconductor device