JPS55125632A - Etching - Google Patents
EtchingInfo
- Publication number
- JPS55125632A JPS55125632A JP3398179A JP3398179A JPS55125632A JP S55125632 A JPS55125632 A JP S55125632A JP 3398179 A JP3398179 A JP 3398179A JP 3398179 A JP3398179 A JP 3398179A JP S55125632 A JPS55125632 A JP S55125632A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- etchant
- capsule
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 5
- 239000002775 capsule Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000003486 chemical etching Methods 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To accomplish properly selected etching of the insulator film on the semiconductor wafer by heating the wafer within a quartz capsule sealed in the etchant atmosphere. CONSTITUTION:An appropriate liquid of H2O and HF prepared at a ratio of 10 to 1 as etchant is sealed into a quarts capsule with an Si substrate coated with an SiO2 film, Si3N4 film and PSG film and maintained at 150 deg.C, and then undergoes an etching under the internal pressure of about 10kg/cm<2>. Thereupon, utterly contrary to the usual chemical etching, the Si3N4 film and the PSG film are etched but the Si substrate and the SiO2 film won't be done at all. Depending on the selection of the etchant material and the pressure within the capsule, the etching ratio vaied with the difference in the material can be increased noticeably more than that of the conventional dry etching. Therefore, properly selcted etching is possible for the insulator film on the semiconductor substrate. The etchant can be of a liquid and gaseous phase.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3398179A JPS55125632A (en) | 1979-03-23 | 1979-03-23 | Etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3398179A JPS55125632A (en) | 1979-03-23 | 1979-03-23 | Etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55125632A true JPS55125632A (en) | 1980-09-27 |
Family
ID=12401655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3398179A Pending JPS55125632A (en) | 1979-03-23 | 1979-03-23 | Etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55125632A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6069531A (en) * | 1983-09-26 | 1985-04-20 | Toshiba Corp | Decomposing device for semiconductor thin film |
| JPS61144545A (en) * | 1984-12-18 | 1986-07-02 | Toshiba Corp | Device for dissolving thin film or thin sheet |
| US5279705A (en) * | 1990-11-28 | 1994-01-18 | Dainippon Screen Mfg. Co., Ltd. | Gaseous process for selectively removing silicon nitride film |
| US5376233A (en) * | 1992-02-10 | 1994-12-27 | Texas Instruments Incorporated | Method for selectively etching oxides |
| US5658417A (en) * | 1992-12-08 | 1997-08-19 | Nec Corporation | HF vapor selective etching method and apparatus |
-
1979
- 1979-03-23 JP JP3398179A patent/JPS55125632A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6069531A (en) * | 1983-09-26 | 1985-04-20 | Toshiba Corp | Decomposing device for semiconductor thin film |
| JPS61144545A (en) * | 1984-12-18 | 1986-07-02 | Toshiba Corp | Device for dissolving thin film or thin sheet |
| US5279705A (en) * | 1990-11-28 | 1994-01-18 | Dainippon Screen Mfg. Co., Ltd. | Gaseous process for selectively removing silicon nitride film |
| US5376233A (en) * | 1992-02-10 | 1994-12-27 | Texas Instruments Incorporated | Method for selectively etching oxides |
| US5658417A (en) * | 1992-12-08 | 1997-08-19 | Nec Corporation | HF vapor selective etching method and apparatus |
| US6024888A (en) * | 1992-12-08 | 2000-02-15 | Nec Corporation | Vapor selective etching method and apparatus |
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