JPS55153335A - Shaping method of al pattern - Google Patents
Shaping method of al patternInfo
- Publication number
- JPS55153335A JPS55153335A JP6091279A JP6091279A JPS55153335A JP S55153335 A JPS55153335 A JP S55153335A JP 6091279 A JP6091279 A JP 6091279A JP 6091279 A JP6091279 A JP 6091279A JP S55153335 A JPS55153335 A JP S55153335A
- Authority
- JP
- Japan
- Prior art keywords
- film
- plasma
- cr2o3
- etching
- utilizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000007493 shaping process Methods 0.000 title 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract 8
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000003486 chemical etching Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain an Al pattern with high accuracy and miniature structure by a method wherein a mask is formed by a Cr2O3 film on an Al film being selectively etched utilizing gas plasma and futhermore the Al film is selectively etched utilizing CCl4 gas plasma. CONSTITUTION:An SiO2 film 12, an Al film 13 and a Cr2O3 film 14 are formed laminated on an Si substrate 11, and a resist mask 16 is applied. Utilizing gas plasma of CF4 gas with addition of few % of O2 the Cr2O3 film 14 is etched away. Next thereto utilizing unremoved Cr2O3 film 17 as a mask plasma etching is performed by plasma of mixture which consists CCl4 and He. When a device of parallel plate type is utilized, a physical sputter etching effect is applied on a etching object with addition of a chemical etching reaction. With an optimal combination of a etching object, masking materials and plasma guns, damage on a resist film is eliminated, and the Al pattern with miniature structure can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6091279A JPS55153335A (en) | 1979-05-17 | 1979-05-17 | Shaping method of al pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6091279A JPS55153335A (en) | 1979-05-17 | 1979-05-17 | Shaping method of al pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55153335A true JPS55153335A (en) | 1980-11-29 |
Family
ID=13156054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6091279A Pending JPS55153335A (en) | 1979-05-17 | 1979-05-17 | Shaping method of al pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55153335A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57180149A (en) * | 1981-04-30 | 1982-11-06 | Nec Corp | Manufacture of semiconductor device |
-
1979
- 1979-05-17 JP JP6091279A patent/JPS55153335A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57180149A (en) * | 1981-04-30 | 1982-11-06 | Nec Corp | Manufacture of semiconductor device |
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