JPS52122479A - Etching solution of silicon - Google Patents
Etching solution of siliconInfo
- Publication number
- JPS52122479A JPS52122479A JP3962076A JP3962076A JPS52122479A JP S52122479 A JPS52122479 A JP S52122479A JP 3962076 A JP3962076 A JP 3962076A JP 3962076 A JP3962076 A JP 3962076A JP S52122479 A JPS52122479 A JP S52122479A
- Authority
- JP
- Japan
- Prior art keywords
- etching solution
- silicon
- agno
- hno
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain an etching solution suitable for detection of crystal defects of Si wafers by containing dilute solutions of HNO3, HF and AgNO3 respectively into the etching solution.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3962076A JPS52122479A (en) | 1976-04-08 | 1976-04-08 | Etching solution of silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3962076A JPS52122479A (en) | 1976-04-08 | 1976-04-08 | Etching solution of silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52122479A true JPS52122479A (en) | 1977-10-14 |
Family
ID=12558144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3962076A Pending JPS52122479A (en) | 1976-04-08 | 1976-04-08 | Etching solution of silicon |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52122479A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0487302A2 (en) * | 1990-11-22 | 1992-05-27 | Shin-Etsu Handotai Company Limited | Method for testing electrical properties of silicon single crystal |
CN102157608A (en) * | 2010-12-30 | 2011-08-17 | 中国科学院物理研究所 | Method for reducing surface light reflectivity of silicon chip |
JP2012505505A (en) * | 2008-10-10 | 2012-03-01 | ネグゼオン・リミテッド | Silicon or silicon-based materials and their use in rechargeable lithium batteries |
-
1976
- 1976-04-08 JP JP3962076A patent/JPS52122479A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0487302A2 (en) * | 1990-11-22 | 1992-05-27 | Shin-Etsu Handotai Company Limited | Method for testing electrical properties of silicon single crystal |
US5534112A (en) * | 1990-11-22 | 1996-07-09 | Shin-Etsu Handotai Co., Ltd. | Method for testing electrical properties of silicon single crystal |
US5688319A (en) * | 1990-11-22 | 1997-11-18 | Shin-Etsu Handotai Co., Ltd. | Method for testing electrical properties of silicon single crystal |
JP2012505505A (en) * | 2008-10-10 | 2012-03-01 | ネグゼオン・リミテッド | Silicon or silicon-based materials and their use in rechargeable lithium batteries |
CN102157608A (en) * | 2010-12-30 | 2011-08-17 | 中国科学院物理研究所 | Method for reducing surface light reflectivity of silicon chip |
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