JPS52122479A - Etching solution of silicon - Google Patents

Etching solution of silicon

Info

Publication number
JPS52122479A
JPS52122479A JP3962076A JP3962076A JPS52122479A JP S52122479 A JPS52122479 A JP S52122479A JP 3962076 A JP3962076 A JP 3962076A JP 3962076 A JP3962076 A JP 3962076A JP S52122479 A JPS52122479 A JP S52122479A
Authority
JP
Japan
Prior art keywords
etching solution
silicon
agno
hno
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3962076A
Other languages
Japanese (ja)
Inventor
Susumu Tadokoro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP3962076A priority Critical patent/JPS52122479A/en
Publication of JPS52122479A publication Critical patent/JPS52122479A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain an etching solution suitable for detection of crystal defects of Si wafers by containing dilute solutions of HNO3, HF and AgNO3 respectively into the etching solution.
COPYRIGHT: (C)1977,JPO&Japio
JP3962076A 1976-04-08 1976-04-08 Etching solution of silicon Pending JPS52122479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3962076A JPS52122479A (en) 1976-04-08 1976-04-08 Etching solution of silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3962076A JPS52122479A (en) 1976-04-08 1976-04-08 Etching solution of silicon

Publications (1)

Publication Number Publication Date
JPS52122479A true JPS52122479A (en) 1977-10-14

Family

ID=12558144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3962076A Pending JPS52122479A (en) 1976-04-08 1976-04-08 Etching solution of silicon

Country Status (1)

Country Link
JP (1) JPS52122479A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0487302A2 (en) * 1990-11-22 1992-05-27 Shin-Etsu Handotai Company Limited Method for testing electrical properties of silicon single crystal
CN102157608A (en) * 2010-12-30 2011-08-17 中国科学院物理研究所 Method for reducing surface light reflectivity of silicon chip
JP2012505505A (en) * 2008-10-10 2012-03-01 ネグゼオン・リミテッド Silicon or silicon-based materials and their use in rechargeable lithium batteries

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0487302A2 (en) * 1990-11-22 1992-05-27 Shin-Etsu Handotai Company Limited Method for testing electrical properties of silicon single crystal
US5534112A (en) * 1990-11-22 1996-07-09 Shin-Etsu Handotai Co., Ltd. Method for testing electrical properties of silicon single crystal
US5688319A (en) * 1990-11-22 1997-11-18 Shin-Etsu Handotai Co., Ltd. Method for testing electrical properties of silicon single crystal
JP2012505505A (en) * 2008-10-10 2012-03-01 ネグゼオン・リミテッド Silicon or silicon-based materials and their use in rechargeable lithium batteries
CN102157608A (en) * 2010-12-30 2011-08-17 中国科学院物理研究所 Method for reducing surface light reflectivity of silicon chip

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