JPS5687329A - Method of treatment of semiconductor wafer - Google Patents

Method of treatment of semiconductor wafer

Info

Publication number
JPS5687329A
JPS5687329A JP16497579A JP16497579A JPS5687329A JP S5687329 A JPS5687329 A JP S5687329A JP 16497579 A JP16497579 A JP 16497579A JP 16497579 A JP16497579 A JP 16497579A JP S5687329 A JPS5687329 A JP S5687329A
Authority
JP
Japan
Prior art keywords
wafer
reaction
gas supplier
gas
plasma treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16497579A
Other languages
Japanese (ja)
Other versions
JPS596509B2 (en
Inventor
Itaru Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP16497579A priority Critical patent/JPS596509B2/en
Publication of JPS5687329A publication Critical patent/JPS5687329A/en
Publication of JPS596509B2 publication Critical patent/JPS596509B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To correct fluctuations of a plasma effect due to a position by a method wherein when a plasma treatment is applied to a semiconductor wafer, reaction gases in different quantity are supplied from a reaction gas supplier provided with two or more independent reaction gas nozzles. CONSTITUTION:A susceptor 2 holding the wafer 1 and the gas supplier 4 (4A, 4B) are facedly arranged in parallel in a reaction chamber. The gas supplier 4 is formed of two gas suppliers 4A and 4B, which respectively independently control a flow- rate of the reaction gases. The gas supplier may be constructed by two or more parts if necessary. When a silicon nitride film is formed on the wafer 1 by the plasma treatment, generatlly the wafer 1A at the central part is larger than the wafer 1B at the peripheral part in the reaction rate, so that a larger quantity of the reaction gases is supplied to the gas supplier 4B at the peripheral part. Accordingly, the ununiformity in the plasma treatment caused by fluctuations of the plasma effect due to locations can be corrected.
JP16497579A 1979-12-18 1979-12-18 Processing method for semiconductor wafers Expired JPS596509B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16497579A JPS596509B2 (en) 1979-12-18 1979-12-18 Processing method for semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16497579A JPS596509B2 (en) 1979-12-18 1979-12-18 Processing method for semiconductor wafers

Publications (2)

Publication Number Publication Date
JPS5687329A true JPS5687329A (en) 1981-07-15
JPS596509B2 JPS596509B2 (en) 1984-02-13

Family

ID=15803437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16497579A Expired JPS596509B2 (en) 1979-12-18 1979-12-18 Processing method for semiconductor wafers

Country Status (1)

Country Link
JP (1) JPS596509B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840834U (en) * 1981-09-14 1983-03-17 日本電気株式会社 Vapor phase growth equipment
JPS63291422A (en) * 1987-05-25 1988-11-29 Tokyo Electron Ltd Ashing
US8195693B2 (en) 2004-12-16 2012-06-05 International Business Machines Corporation Automatic composition of services through semantic attribute matching
JP2013159798A (en) * 2012-02-02 2013-08-19 Mitsubishi Electric Corp Plasma cvd device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840834U (en) * 1981-09-14 1983-03-17 日本電気株式会社 Vapor phase growth equipment
JPS63291422A (en) * 1987-05-25 1988-11-29 Tokyo Electron Ltd Ashing
US8195693B2 (en) 2004-12-16 2012-06-05 International Business Machines Corporation Automatic composition of services through semantic attribute matching
JP2013159798A (en) * 2012-02-02 2013-08-19 Mitsubishi Electric Corp Plasma cvd device

Also Published As

Publication number Publication date
JPS596509B2 (en) 1984-02-13

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