JPS5687329A - Method of treatment of semiconductor wafer - Google Patents

Method of treatment of semiconductor wafer

Info

Publication number
JPS5687329A
JPS5687329A JP16497579A JP16497579A JPS5687329A JP S5687329 A JPS5687329 A JP S5687329A JP 16497579 A JP16497579 A JP 16497579A JP 16497579 A JP16497579 A JP 16497579A JP S5687329 A JPS5687329 A JP S5687329A
Authority
JP
Japan
Prior art keywords
wafer
reaction
gas supplier
gas
plasma treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16497579A
Other languages
English (en)
Other versions
JPS596509B2 (ja
Inventor
Itaru Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP16497579A priority Critical patent/JPS596509B2/ja
Publication of JPS5687329A publication Critical patent/JPS5687329A/ja
Publication of JPS596509B2 publication Critical patent/JPS596509B2/ja
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP16497579A 1979-12-18 1979-12-18 半導体ウエハの処理方法 Expired JPS596509B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16497579A JPS596509B2 (ja) 1979-12-18 1979-12-18 半導体ウエハの処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16497579A JPS596509B2 (ja) 1979-12-18 1979-12-18 半導体ウエハの処理方法

Publications (2)

Publication Number Publication Date
JPS5687329A true JPS5687329A (en) 1981-07-15
JPS596509B2 JPS596509B2 (ja) 1984-02-13

Family

ID=15803437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16497579A Expired JPS596509B2 (ja) 1979-12-18 1979-12-18 半導体ウエハの処理方法

Country Status (1)

Country Link
JP (1) JPS596509B2 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840834U (ja) * 1981-09-14 1983-03-17 日本電気株式会社 気相成長装置
JPS63291422A (ja) * 1987-05-25 1988-11-29 Tokyo Electron Ltd アッシング方法
US8195693B2 (en) 2004-12-16 2012-06-05 International Business Machines Corporation Automatic composition of services through semantic attribute matching
JP2013159798A (ja) * 2012-02-02 2013-08-19 Mitsubishi Electric Corp プラズマcvd装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840834U (ja) * 1981-09-14 1983-03-17 日本電気株式会社 気相成長装置
JPS63291422A (ja) * 1987-05-25 1988-11-29 Tokyo Electron Ltd アッシング方法
US8195693B2 (en) 2004-12-16 2012-06-05 International Business Machines Corporation Automatic composition of services through semantic attribute matching
JP2013159798A (ja) * 2012-02-02 2013-08-19 Mitsubishi Electric Corp プラズマcvd装置

Also Published As

Publication number Publication date
JPS596509B2 (ja) 1984-02-13

Similar Documents

Publication Publication Date Title
KR890002995A (ko) 고온가열 스퍼터링 방법
KR920012537A (ko) 화학기상 성장장치
JPS5772318A (en) Vapor growth method
JPS5748226A (en) Plasma processing method and device for the same
JPS5687329A (en) Method of treatment of semiconductor wafer
SE9102378L (sv) Metod foer diamantbelaeggning med mikrovaagsplasma
JPS5687328A (en) Semiconductor treatment device
KR920017178A (ko) 미 반응 가스의 제거 및 반응 억제 방법
MY132166A (en) Method for tuning barrel reactor purge system
JPS5694749A (en) Plasma heaping device
JPS5713746A (en) Vapor-phase growing apparatus
JPH065505A (ja) フォトレジスト塗布前処理装置
JPS6383275A (ja) 被処理体の処理方法
JPS6482533A (en) Dry etching
JPS5737824A (en) Method and device for impurity diffusion
JPS56161832A (en) Gaseous phase treatment device
JPS57121235A (en) Plasma processing and device thereof
JPS57121234A (en) Plasma processing and device thereof
JPS57136932A (en) Photochemical reaction device
JPS52127761A (en) Gas plasma etching unit
JPS6459808A (en) Growth of semiconductor
JPS6481215A (en) Vapor growth apparatus
JPS5621329A (en) Plasma treatment
JPS6453419A (en) Resist coating device
JPS57121236A (en) Plasma processing and device thereof