JPH04329626A - Processor of semiconductor device - Google Patents
Processor of semiconductor deviceInfo
- Publication number
- JPH04329626A JPH04329626A JP10072691A JP10072691A JPH04329626A JP H04329626 A JPH04329626 A JP H04329626A JP 10072691 A JP10072691 A JP 10072691A JP 10072691 A JP10072691 A JP 10072691A JP H04329626 A JPH04329626 A JP H04329626A
- Authority
- JP
- Japan
- Prior art keywords
- reaction gas
- semiconductor substrate
- reaction
- semiconductor
- uniform
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 239000012495 reaction gas Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、半導体基板処理時に、
その半導体基板面内の均一性を高める半導体素子の製造
装置に関するものである。[Industrial Application Field] The present invention provides a method for processing semiconductor substrates.
The present invention relates to a semiconductor device manufacturing apparatus that improves the uniformity within the surface of a semiconductor substrate.
【０００２】0002
【従来の技術】従来より、半導体素子を形成する半導体
基板の成膜処理，エッチング処理には半導体基板を所望
の真空度になし得る容器内に収容保持した状態で所望の
処理を行う、真空装置が用いられている。[Prior Art] Conventionally, for film formation and etching processing of semiconductor substrates forming semiconductor elements, vacuum equipment is used to carry out the desired processing while holding the semiconductor substrate in a container capable of achieving the desired degree of vacuum. is used.
【０００３】以下、従来の半導体素子の製造装置につい
て、プラズマ成膜法を例に説明する。[0003] Hereinafter, a conventional semiconductor device manufacturing apparatus will be explained using a plasma film forming method as an example.
【０００４】図２は従来の半導体素子の製造装置の構成
を模式的に示す構成図である。図２において、１は反応
容器であり、２は反応容器１内に保持され処理される半
導体基板、３は半導体基板２を保持するための基板保持
台であり、４は反応容器１に連結され半導体基板２を反
応容器１に導入する半導体基板導入装置、５は半導体基
板２を処理するための反応ガスを所定の流量に制御し供
給する反応ガス供給装置、６は反応ガスを反応容器１に
導入するために反応容器１に連結された反応ガス導入部
、７は反応容器１を真空に保つための真空装置、８は反
応容器１に連結され真空装置７により反応ガスを排出す
るための反応ガス排出部、９は真空装置７と反応ガス排
出部８の間に接続され反応ガスの排気速度を制御する圧
力制御器、１０は反応ガス供給装置５より供給された反
応ガスをプラズマにするプラズマ形成用電極、１１はプ
ラズマ形成用電極１０に接続されたプラズマ発生用電源
である。FIG. 2 is a block diagram schematically showing the structure of a conventional semiconductor device manufacturing apparatus. In FIG. 2, 1 is a reaction vessel, 2 is a semiconductor substrate held and processed in the reaction vessel 1, 3 is a substrate holding stand for holding the semiconductor substrate 2, and 4 is a substrate holding stand connected to the reaction vessel 1. A semiconductor substrate introduction device for introducing the semiconductor substrate 2 into the reaction container 1; 5 a reaction gas supply device that controls and supplies a reaction gas to a predetermined flow rate for processing the semiconductor substrate 2; 6 a reaction gas supply device that supplies the reaction gas to the reaction container 1; 7 is a vacuum device for keeping the reaction container 1 in vacuum; 8 is a reaction gas inlet connected to the reaction container 1 to discharge the reaction gas by the vacuum device 7; A gas exhaust section, 9 is a pressure controller connected between the vacuum device 7 and the reaction gas exhaust section 8 and controls the exhaust speed of the reaction gas, and 10 is a plasma that converts the reaction gas supplied from the reaction gas supply device 5 into plasma. The formation electrode 11 is a plasma generation power supply connected to the plasma formation electrode 10.
【０００５】以上のように構成された半導体素子の製造
装置について、以下その動作を説明する。The operation of the semiconductor device manufacturing apparatus constructed as described above will be described below.
【０００６】まず、半導体基板導入装置４により半導体
基板２は、反応容器１内の基板保持台３に保持され、反
応ガス供給装置５より供給された反応ガスはプラズマ形
成用電極９によりプラズマ状態にされ、この雰囲気中に
おいて半導体基板２はプラズマ成膜される。なおこの時
、反応容器１は真空装置７および圧力制御器９により一
定のガス圧の真空度に保たれる。First, the semiconductor substrate 2 is held on the substrate holding table 3 in the reaction vessel 1 by the semiconductor substrate introduction device 4, and the reaction gas supplied from the reaction gas supply device 5 is turned into a plasma state by the plasma forming electrode 9. In this atmosphere, the semiconductor substrate 2 is subjected to plasma deposition. At this time, the reaction vessel 1 is maintained at a constant gas pressure by the vacuum device 7 and the pressure controller 9.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上記従
来の構成の半導体素子の製造装置においては、その処理
条件によっては、反応ガス導入部６と反応ガス排出部８
との位置関係またはその形状等により、反応ガスの流れ
が偏り、反応容器１内の圧力も一様な状態では無くなる
。その結果、成膜された半導体基板２は、その面内の均
一性において劣化したものとなってしまう。[Problems to be Solved by the Invention] However, in the conventional semiconductor device manufacturing apparatus described above, depending on the processing conditions, the reaction gas introduction section 6 and the reaction gas discharge section 8 may
Due to the positional relationship with the reaction vessel 1 or its shape, the flow of the reaction gas becomes uneven, and the pressure inside the reaction vessel 1 is no longer uniform. As a result, the in-plane uniformity of the formed semiconductor substrate 2 deteriorates.
【０００８】本発明は上記従来の課題を解決するもので
、半導体基板面内の均一性の良好な処理を可能とする半
導体素子の製造装置を提供することを目的とする。The present invention is intended to solve the above-mentioned conventional problems, and an object thereof is to provide a semiconductor device manufacturing apparatus that enables processing with good uniformity within the plane of a semiconductor substrate.
【０００９】[0009]
【課題を解決するための手段】この目的を達成するため
に本発明の半導体素子の製造装置は、反応容器内に複数
個のガス排出部を設け、なおかつ各々の排気速度を独立
に制御できる構造を有している。[Means for Solving the Problems] In order to achieve this object, the semiconductor device manufacturing apparatus of the present invention has a structure in which a plurality of gas exhaust sections are provided in a reaction vessel, and the exhaust speed of each can be independently controlled. have.
【００１０】0010
【作用】この構成によって反応ガスの流れを均一に保つ
ことができるため、反応ガスの流れの偏り、反応容器内
の圧力の不均一も改善され、半導体基板処理時の面内に
おける均一性を改善することができる。[Action] This configuration allows the flow of the reaction gas to be maintained uniformly, thereby improving unevenness in the flow of the reaction gas and non-uniform pressure within the reaction vessel, improving in-plane uniformity during semiconductor substrate processing. can do.
【００１１】[0011]
【実施例】以下、本発明の一実施例について、図面を参
照しながら説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００１２】図１は本発明の一実施例における半導体素
子の製造装置の構成を模式的に示す構成図である。図２
と同一部分には同一番号を付し、説明を省略する。すな
わち本発明の特徴は反応ガス排出部２１にある。すなわ
ち反応容器１に連結され真空装置７により反応ガスを排
出するための反応ガス排出部２１を複数個備えてあり、
その各々に排気速度を制御するための圧力制御器２２が
接続されている。FIG. 1 is a block diagram schematically showing the structure of a semiconductor device manufacturing apparatus according to an embodiment of the present invention. Figure 2
The same parts are given the same numbers and their explanations are omitted. That is, the feature of the present invention lies in the reaction gas discharge section 21. That is, a plurality of reaction gas discharge parts 21 connected to the reaction vessel 1 and for exhausting reaction gas by the vacuum device 7 are provided.
A pressure controller 22 for controlling the pumping speed is connected to each of them.
【００１３】以上のように構成された本実施例の半導体
素子の製造装置について、従来例と同様にプラズマ成膜
法を例に説明する。The semiconductor device manufacturing apparatus of this embodiment constructed as described above will be explained using the plasma film forming method as an example, similar to the conventional example.
【００１４】まず、半導体基板導入装置４により半導体
基板２は、反応容器１内の基板保持台３に保持され、反
応ガス供給装置５より供給された反応ガスはプラズマ形
成用電極１０によりプラズマ状態にされ、この雰囲気中
において半導体基板２はプラズマ成膜される。以上は従
来例と同様であるが、本実施例においては、反応ガスは
各々独立に排気速度を制御された反応ガス排出部２１に
より、半導体基板２に対して均一な状態で流れ、排気さ
れる。First, the semiconductor substrate 2 is held on the substrate holding table 3 in the reaction vessel 1 by the semiconductor substrate introduction device 4, and the reaction gas supplied from the reaction gas supply device 5 is turned into a plasma state by the plasma forming electrode 10. In this atmosphere, the semiconductor substrate 2 is subjected to plasma deposition. The above is the same as the conventional example, but in this example, the reaction gases flow uniformly to the semiconductor substrate 2 and are exhausted by the reaction gas discharge parts 21 whose exhaust speeds are independently controlled. .
【００１５】以上のように本実施例によれば、反応ガス
排出部２１を反応容器１内に複数個設け、その各々に圧
力制御器２２を接続したことにより、反応ガスの流れを
均一に保つことができ、反応ガスの流れの偏り、反応容
器１内の圧力の不均一も改善され、均一なプラズマ状態
を得ることができる。その結果、成膜された半導体基板
２は、その面内の均一性において優れたものとなる。As described above, according to this embodiment, a plurality of reaction gas discharge sections 21 are provided in the reaction vessel 1, and a pressure controller 22 is connected to each of them, thereby maintaining a uniform flow of the reaction gas. This also improves the unevenness of the flow of the reaction gas and the non-uniformity of the pressure within the reaction vessel 1, making it possible to obtain a uniform plasma state. As a result, the formed semiconductor substrate 2 has excellent in-plane uniformity.
【００１６】なお、上記実施例では、プラズマ成膜法を
例に説明したが、プラズマエッチング法についても本発
明の効果は同じであることは言うまでもなく、また他の
半導体基板処理方法においても効果は明らかである。In the above embodiments, the plasma film forming method was used as an example, but it goes without saying that the effects of the present invention are the same for plasma etching methods, and also for other semiconductor substrate processing methods. it is obvious.
【００１７】[0017]
【発明の効果】以上のように本発明は、反応ガス排出部
が反応容器に複数個配置され、各々の排気速度を個別に
制御する圧力制御器を有するので、半導体基板面内の処
理の均一性を改善することができる優れた半導体素子の
製造装置を提供できる。As described above, according to the present invention, a plurality of reaction gas exhaust sections are arranged in a reaction container, and a pressure controller is provided to individually control the exhaust speed of each gas discharge section. It is possible to provide an excellent semiconductor device manufacturing apparatus that can improve performance.
【図１】本発明の一実施例の半導体素子の製造装置の構
成を模式的に示す構成図FIG. 1 is a configuration diagram schematically showing the configuration of a semiconductor device manufacturing apparatus according to an embodiment of the present invention.
【図２】従来の半導体素子の製造装置の構成を模式的に
示す構成図[Fig. 2] A configuration diagram schematically showing the configuration of a conventional semiconductor device manufacturing apparatus.
１ 反応容器 ２ 半導体基板 ３ 基板保持台 ４ 半導体基板導入装置 ５ 反応ガス供給装置 ６ 反応ガス導入部 ７ 真空装置 １０ プラズマ形成用電極 １１ プラズマ発生用電源 ２１ 反応ガス排出部 ２２ 圧力制御器 1 Reaction container 2 Semiconductor substrate 3 Substrate holding stand 4 Semiconductor substrate introduction equipment 5 Reaction gas supply device 6 Reactant gas introduction part 7 Vacuum equipment 10 Electrode for plasma formation 11 Plasma generation power supply 21 Reactant gas discharge part 22 Pressure controller
Claims (1)
保持するように構成された反応容器と、その反応容器内
に半導体基板を挿入する半導体基板導入装置と、前記反
応容器内に所望ガスを供給する反応ガス供給装置と、そ
の反応ガス供給装置を前記反応容器に連結した反応ガス
導入部と、前記反応容器内を所望の真空度に排気する真
空装置と、その真空装置を前記反応容器に連結した反応
ガス排気部とを備えた半導体素子の製造装置において、
前記反応ガス排出部が前記反応容器に複数個配置され、
その各々の反応ガス排出部の排気速度を独立に制御する
ための圧力制御器を備えていることを特徴とする半導体
素子の製造装置。1. A reaction vessel configured to house and hold a semiconductor substrate on which a semiconductor element is formed, a semiconductor substrate introducing device for inserting the semiconductor substrate into the reaction vessel, and a desired gas introduced into the reaction vessel. a reaction gas supply device for supplying the reaction gas, a reaction gas introduction section connecting the reaction gas supply device to the reaction container, a vacuum device for evacuating the inside of the reaction container to a desired degree of vacuum, and the vacuum device being connected to the reaction container. In a semiconductor device manufacturing apparatus equipped with a connected reaction gas exhaust section,
A plurality of the reaction gas discharge parts are arranged in the reaction container,
1. A semiconductor device manufacturing apparatus comprising a pressure controller for independently controlling the exhaust speed of each of the reaction gas discharge sections.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10072691A JPH04329626A (en) | 1991-05-02 | 1991-05-02 | Processor of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10072691A JPH04329626A (en) | 1991-05-02 | 1991-05-02 | Processor of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04329626A true JPH04329626A (en) | 1992-11-18 |
Family
ID=14281627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10072691A Pending JPH04329626A (en) | 1991-05-02 | 1991-05-02 | Processor of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04329626A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100302114B1 (en) * | 1998-03-27 | 2001-10-19 | 철 주 황 | Device for Making Semiconductor Element by Using Plasma |
| JP2009117844A (en) * | 2007-11-08 | 2009-05-28 | Applied Materials Inc | Multi-port pumping system for substrate treating chamber |
| JP2014027191A (en) * | 2012-07-30 | 2014-02-06 | Hitachi High-Technologies Corp | Manufacturing method of photo-cvd film and manufacturing apparatus of photo-cvd film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01305524A (en) * | 1988-06-03 | 1989-12-08 | Nec Corp | Plasma cvd device |
| JPH0362514A (en) * | 1989-07-31 | 1991-03-18 | Babcock Hitachi Kk | Vapor growth device |
| JPH0371622A (en) * | 1989-08-10 | 1991-03-27 | Fujitsu Ltd | Vapor growth device |
-
1991
- 1991-05-02 JP JP10072691A patent/JPH04329626A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01305524A (en) * | 1988-06-03 | 1989-12-08 | Nec Corp | Plasma cvd device |
| JPH0362514A (en) * | 1989-07-31 | 1991-03-18 | Babcock Hitachi Kk | Vapor growth device |
| JPH0371622A (en) * | 1989-08-10 | 1991-03-27 | Fujitsu Ltd | Vapor growth device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100302114B1 (en) * | 1998-03-27 | 2001-10-19 | 철 주 황 | Device for Making Semiconductor Element by Using Plasma |
| JP2009117844A (en) * | 2007-11-08 | 2009-05-28 | Applied Materials Inc | Multi-port pumping system for substrate treating chamber |
| JP2014027191A (en) * | 2012-07-30 | 2014-02-06 | Hitachi High-Technologies Corp | Manufacturing method of photo-cvd film and manufacturing apparatus of photo-cvd film |
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