JPS5840834U - Vapor phase growth equipment - Google Patents
Vapor phase growth equipmentInfo
- Publication number
- JPS5840834U JPS5840834U JP13658981U JP13658981U JPS5840834U JP S5840834 U JPS5840834 U JP S5840834U JP 13658981 U JP13658981 U JP 13658981U JP 13658981 U JP13658981 U JP 13658981U JP S5840834 U JPS5840834 U JP S5840834U
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- phase growth
- growth equipment
- susceptor
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の気相成長装置の断面図、第２図ａ１よ第
１図の部分図、ｂは第１図の装置により得られた膜厚分
布の特性曲線図、第３図は本考案の一実施例の断面図、
第４図ａは第３図の部分図、ｂは第３図の装置により得
られた膜厚分布の一例を示す特性曲線図である。
′
１・・・・・・ベースプレート、２・・・・・・ベルレ
ヤー、３・・・・・・０リング、４・・・・・・止メ金
具、５・・・・・・ノズル、５ａ・・・・・・噴出口、
６・・・・・・回転軸、７・・・・・・軸受、８・・・
・・・サセプター、９・・・・・・コイルカバー、１０
・・・・・・コイル、１１・・・・・・反応ガス、１２
・・・・・・モーター、１３・・・・・・ベルト、１４
・・・・・・排出管、１５・・・・・・ガス流量調節器
、２１・・・・・・基板（ウェハー）。Fig. 1 is a cross-sectional view of a conventional vapor phase growth apparatus, Fig. 2 a1 is a partial view of Fig. 1, b is a characteristic curve of the film thickness distribution obtained by the apparatus shown in Fig. 1, and Fig. 3 is a partial view of Fig. 1. A sectional view of an embodiment of the invention,
FIG. 4a is a partial view of FIG. 3, and FIG. 4b is a characteristic curve diagram showing an example of the film thickness distribution obtained by the apparatus of FIG. 3.
' 1...Base plate, 2...Bell layer, 3...0 ring, 4...Stopping metal fitting, 5...Nozzle, 5a ... spout,
6...Rotating shaft, 7...Bearing, 8...
... Susceptor, 9 ... Coil cover, 10
... Coil, 11 ... Reactant gas, 12
...Motor, 13...Belt, 14
. . . Discharge pipe, 15 . . . Gas flow rate regulator, 21 . . . Substrate (wafer).
Claims (1)
に垂直方向に設けられた反応気体導入用ノズルを有し、
このノズルを二重管構造にして反応気体の導出部を分離
し、それぞれの導出部からの反応気体流量を独立して制
御することを特徴と。 する気相成長装置。[Claims for Utility Model Registration] A susceptor on which a semiconductor substrate is placed has a nozzle for introducing a reactive gas provided in a vertical direction so as to protrude from the center of the susceptor,
This nozzle is characterized by having a double pipe structure, separating the reaction gas outlet sections, and controlling the flow rate of the reaction gas from each outlet section independently. vapor phase growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13658981U JPS5840834U (en) | 1981-09-14 | 1981-09-14 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13658981U JPS5840834U (en) | 1981-09-14 | 1981-09-14 | Vapor phase growth equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5840834U true JPS5840834U (en) | 1983-03-17 |
Family
ID=29929912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13658981U Pending JPS5840834U (en) | 1981-09-14 | 1981-09-14 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5840834U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5381488A (en) * | 1976-12-27 | 1978-07-18 | Matsushita Electric Ind Co Ltd | Gas phase growth apparatus |
| JPS5687329A (en) * | 1979-12-18 | 1981-07-15 | Matsushita Electronics Corp | Method of treatment of semiconductor wafer |
-
1981
- 1981-09-14 JP JP13658981U patent/JPS5840834U/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5381488A (en) * | 1976-12-27 | 1978-07-18 | Matsushita Electric Ind Co Ltd | Gas phase growth apparatus |
| JPS5687329A (en) * | 1979-12-18 | 1981-07-15 | Matsushita Electronics Corp | Method of treatment of semiconductor wafer |
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