JPH0258823A - Construction of susceptor for cvd apparatus - Google Patents
Construction of susceptor for cvd apparatusInfo
- Publication number
- JPH0258823A JPH0258823A JP21096788A JP21096788A JPH0258823A JP H0258823 A JPH0258823 A JP H0258823A JP 21096788 A JP21096788 A JP 21096788A JP 21096788 A JP21096788 A JP 21096788A JP H0258823 A JPH0258823 A JP H0258823A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- reaction vessel
- raw gas
- substrates
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010276 construction Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000006243 chemical reaction Methods 0.000 claims abstract description 45
- 239000007789 gas Substances 0.000 claims description 38
- 239000002994 raw material Substances 0.000 claims description 20
- 239000000126 substance Substances 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 abstract description 11
- 239000010409 thin film Substances 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、ＣＶＤ装置において生成された物質が堆積す
る基板を保持するサセプタの構造に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to the structure of a susceptor that holds a substrate on which a substance produced in a CVD apparatus is deposited.
〈従来の技術〉
化学的エピタキシャル成、長技術であるＣＶＤ法（Ｃｈ
ｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ）は
薄膜の成長技術等に広く利用されている。<Conventional technology> Chemical epitaxial growth, CVD method (Ch.
chemical vapor deposition) is widely used in thin film growth techniques and the like.
このようなＣＶＤ法を実施するためのＣＶＤ装置として
は従来より種々な形式のものがあるが、例えば第４図ま
たは第５図に示すようなものがあった。Conventionally, there have been various types of CVD apparatuses for carrying out such a CVD method, such as the one shown in FIG. 4 or FIG. 5, for example.
第４図に示すＣＶＤ装置は、管状の反応容器１内に設け
られたサセプタ２に複数の基板３を平らに列へて保持さ
せたものであり、反応容器１内で図中矢印で示す方向へ
流れる原料ガスを反応させて、その反応生成物を基板３
上に堆積させるものである。The CVD apparatus shown in FIG. 4 has a plurality of substrates 3 held in a flat row by a susceptor 2 provided in a tubular reaction vessel 1, and the substrates 3 are held in a flat row within the reaction vessel 1 in the direction indicated by the arrow in the figure. The raw material gas flowing to the substrate 3 is reacted, and the reaction product is transferred to the substrate 3.
It is something that is deposited on top.
第５図に示すＣＶＤ装置は、管状の反応容器５内に設け
られたサセプタ６に複数の基板７を一定の傾きをもって
立てて列へて保持させたものであり、反応容器５内で図
中矢印で示す方向へ流れる原料ガスを反応させて、その
反応生成物を基板７上に堆積させるものである。The CVD apparatus shown in FIG. 5 has a plurality of substrates 7 erected at a constant inclination and held in a row on a susceptor 6 provided in a tubular reaction vessel 5. The raw material gas flowing in the direction shown by the arrow is caused to react, and the reaction product is deposited on the substrate 7.
〈発明が解決しようとする課題〉
第４図に示したような従来のＣＶＤ装置にあっては、ガ
ス流の流れ方向に対して基板３が平行に配設されている
ため、反応生成物の基板３への堆積速度が遅いという問
題があった。<Problem to be solved by the invention> In the conventional CVD apparatus as shown in FIG. 4, the substrate 3 is disposed parallel to the flow direction of the gas flow, so that the reaction products are There was a problem that the deposition rate on the substrate 3 was slow.
一方、第５図に示したような従来のＣＶＤ装置にあって
は、ガス流の流れ方向に対して複数の基板７が部分的に
重なった状態で配設されているため、先頭から２枚目以
降の基板７にあっては堆積する反応生成物の膜が不均一
になってしまうという問題があった。On the other hand, in the conventional CVD apparatus shown in FIG. There is a problem in that the deposited reaction product film becomes non-uniform on the substrate 7 after the first step.
本発明は上記従来の事情に鑑みなされたもので、複数の
基板上に均一な薄膜を被着することができるＣＶＤ装置
のサセプタ構造を提供することを目的とする。The present invention was made in view of the above-mentioned conventional circumstances, and an object of the present invention is to provide a susceptor structure for a CVD apparatus that can deposit a uniform thin film on a plurality of substrates.
く課題を解決するための手段〉
上記目的を達成する本発明に係るＣＶＤ装置のサセプタ
構造は、原料ガスを反応させる反応容器と、この反応容
器内に配設されて原料ガスの反応により生成された物質
が堆積する基板を保持するサセプタと、を有するＣＶＤ
装置において、前記サセプタは、原料ガス流の流れ方向
に向かって先端が突出した錐形状をなし、該原料ガス流
の流れ方向に対して傾斜した複数の基板保持面を有する
ことを特徴とする。Means for Solving the Problems> A susceptor structure of a CVD apparatus according to the present invention that achieves the above object includes a reaction vessel in which raw material gases are reacted, and a susceptor structure disposed in the reaction vessel to produce a susceptor by reacting the raw material gases. a susceptor for holding a substrate on which a deposited material is deposited;
In the apparatus, the susceptor has a conical shape with a tip protruding toward the flow direction of the source gas flow, and has a plurality of substrate holding surfaces that are inclined with respect to the flow direction of the source gas flow.
く作用〉
本発明に係るＣＶＤ装置のサセプタ構造にあっては、反
応容器内を流れて来る原料ガスに対し、サセプタに保持
された複数の基板は互いに同一の条件で、且つ、前方に
他の基板が障害となることはなく設置される。従って、
各基板には膜厚にむらなく反応底生物が堆積し、また、
堆積された反応生成物は各基板間においても均一な膜厚
となる。Effects> In the susceptor structure of the CVD apparatus according to the present invention, the plurality of substrates held in the susceptor are under the same conditions with respect to the source gas flowing in the reaction vessel, and there are no other substrates in front. The board can be installed without any obstruction. Therefore,
Reactive benthic organisms are deposited on each substrate evenly in film thickness, and
The deposited reaction product has a uniform thickness between each substrate.
また、サセプタは原料ガス流に対して先端が突出した錐
形状をなしていることから、原料ガスの層流に与える影
響が少なく、原料ガス流の乱流発生を回避して反応生成
物を均一な状態で基板に堆積させることができる。In addition, since the susceptor has a conical shape with a protruding tip toward the raw material gas flow, it has little effect on the laminar flow of the raw material gas, avoids turbulence in the raw material gas flow, and uniformly distributes the reaction products. It can be deposited on a substrate in a stable state.
〈発明の効果〉
本発明に係るＣＶＤ装置のサセプタ構造によれば、サセ
プタは原料ガス流の流れ方向に向かって先端が突出した
錐形状をなし且つ該原料ガス流の流れ方向に対して傾斜
した複数の基板保持面を有しているため、各基板保持面
に保持された基板を同一の条件で、且つ、前方に他の基
板が障害となることはなくガス流にさらすことができ、
基板上に反応生成物による均一な膜を得ることができる
。<Effects of the Invention> According to the susceptor structure of the CVD apparatus according to the present invention, the susceptor has a conical shape with a tip protruding toward the flow direction of the raw material gas flow, and is inclined with respect to the flow direction of the raw material gas flow. Since it has a plurality of substrate holding surfaces, the substrate held on each substrate holding surface can be exposed to the gas flow under the same conditions and without other substrates becoming an obstacle in front.
A uniform film of reaction products can be obtained on the substrate.
更に、サセプタは錐形状をなしていることから、層流状
態で供給される原料ガス流をあまり乱してしまうことは
なく、反応生成物を基板上に均一に堆積させることがで
きる。Furthermore, since the susceptor has a conical shape, the flow of the raw material gas supplied in a laminar flow is not disturbed too much, and the reaction product can be uniformly deposited on the substrate.
〈実施例〉
本発明に係るＣＶＤ装置のサセプタ構造を実施例に基づ
いて具体的に説明する。<Example> A susceptor structure of a CVD apparatus according to the present invention will be specifically described based on an example.
第１図〜第３図に示すように、ＣＶＤ装置の反応容器１
１は円筒状をなしている。反応容器１１の一端は蓋部材
１２がオーリング１３を介して取り付けられて気密に閉
止されており、この蓋部材１２には透明ガラスがはめ込
まれた窓１４が設けられている。一方、反応容器１１の
他端には排気管１５がオーリング１６を介して気密に取
り付けられており、この排気管１５は図外の排気装置に
接続されている。As shown in FIGS. 1 to 3, reaction vessel 1 of the CVD apparatus
1 has a cylindrical shape. A lid member 12 is attached to one end of the reaction vessel 11 via an O-ring 13 and hermetically closed, and the lid member 12 is provided with a window 14 fitted with transparent glass. On the other hand, an exhaust pipe 15 is airtightly attached to the other end of the reaction vessel 11 via an O-ring 16, and this exhaust pipe 15 is connected to an exhaust device (not shown).
反応容器１１の周囲には複数段（図中では１０段）のヒ
ータ１７が互いに間隔をもって配設されており、これら
ヒータ１７によって反応容器１１は加熱炉となっている
。尚、蓋部材１２及び排気管１５を熱から保護するため
、これらと反応容器１１との接続部には冷却用パイプ１
８がそれぞれ付設されている。また、反応容器１１のヒ
ータ１７間の隙間に対応した位置には透明ガラスがはめ
込まれた窓１９が設けられている。A plurality of stages (10 stages in the figure) of heaters 17 are arranged at intervals around the reaction vessel 11, and these heaters 17 make the reaction vessel 11 a heating furnace. In order to protect the lid member 12 and the exhaust pipe 15 from heat, a cooling pipe 1 is provided at the connection between these and the reaction vessel 11.
8 are attached to each. Furthermore, a window 19 fitted with transparent glass is provided at a position corresponding to the gap between the heaters 17 of the reaction vessel 11.
反応容器１１の一端部には複数の原料ガス供給管２０及
び希釈ガス供給管２１が放射状に接続されている。従っ
て、図外の原料ガス供給源及び希釈ガス供給源から供給
管２０及び２１を介して反応容器１１内に原料ガス及び
希釈ガスが供給され、これらガスは反応容器１１内を一
端側から排気装置のある他端側へ流れる。尚、反応容器
１１内の一端部には整流板２１が設けられており、反応
容器１１内に供給された原料ガスは層流となって流れる
。A plurality of source gas supply pipes 20 and diluent gas supply pipes 21 are radially connected to one end of the reaction vessel 11 . Therefore, raw material gas and diluent gas are supplied into the reaction vessel 11 from a raw material gas supply source and a dilution gas supply source (not shown) via the supply pipes 20 and 21, and these gases are pumped through the reaction vessel 11 from one end to the exhaust device. Flows to the other end. A rectifying plate 21 is provided at one end of the reaction vessel 11, so that the source gas supplied into the reaction vessel 11 flows in a laminar flow.
反応容器１１内には三角錐形状のサセプタ２５が設けら
れており、このサセプタ２５はその先端を反応容器１１
の一端側すなわち原料ガスの供給方向に向かって突出さ
せている。サセプタ２５の後端には中空管２７が取り付
けられており、この中空管２７が排気管１５の側壁を貫
通して支持されることにより、サセプタ２５は反応容器
１１と同軸に支持されている。中空管２７は排気管１５
の側壁部に軸受部材２８を介して気密且つ摺動自在に支
持されており、中空管２７を軸線方向へ移動させること
により、サセプタ２５を反応容器１１の軸線に沿って移
動させて任意の位置に設定することができる。A triangular pyramid-shaped susceptor 25 is provided inside the reaction vessel 11, and this susceptor 25 has its tip connected to the reaction vessel 11.
It is made to protrude toward one end side, that is, toward the supply direction of the raw material gas. A hollow tube 27 is attached to the rear end of the susceptor 25, and by penetrating the side wall of the exhaust pipe 15 and supporting the susceptor 25, the susceptor 25 is supported coaxially with the reaction vessel 11. There is. Hollow pipe 27 is exhaust pipe 15
By moving the hollow tube 27 in the axial direction, the susceptor 25 can be moved along the axis of the reaction vessel 11 and can be moved to any desired position. Can be set in any position.
原料ガス流の流れ方向に対して同一の角度で傾斜したサ
セプタ２５の３つの側面にはそれぞれ基板保持面２６が
設けられており、これら基板保持面２６には原料ガスの
反応により生成された物質を堆積させる基板が保持され
る。尚、中空管２７の後端部には赤外線Ｒ２９が設けら
れており、この赤外線源２９から中空管２７を通してサ
セプタ２５の後端を赤外線で照射し、基板保持部２６に
保持した基板を加熱して反応を促進させることができる
。Substrate holding surfaces 26 are provided on each of the three side surfaces of the susceptor 25 that are inclined at the same angle with respect to the flow direction of the source gas flow, and these substrate holding surfaces 26 hold substances generated by the reaction of the source gas. A substrate is held on which the material is deposited. An infrared ray R29 is provided at the rear end of the hollow tube 27, and the rear end of the susceptor 25 is irradiated with infrared rays from this infrared source 29 through the hollow tube 27, and the substrate held in the substrate holder 26 is irradiated with infrared rays. The reaction can be accelerated by heating.
反応容器１１の近傍には紫外線源３０が設けられており
、この紫外線源３０からの紫外線はミラー３１を介して
ハーフミラ−３２に導かれ、このハーフミラ−３２て２
つに分けられて反応容器１１内に導かれる。すなわち、
ハーフミラ−３２で分けられた一方の紫外線は、ミラー
３３を介して反応容器１１の一端の窓１４に導かれ、反
応容器１１内にその軸線方向（ガスの流れ方向）から照
射させる。また、ハーフミラ−３２で分けられた他方の
紫外線は、反応容器１１の側部に窓１９に対応して配設
されたハーフミラ−群３４に導かれ、このハーフミラ−
群３４で均等に分けられてそれぞれの窓１９から反応容
器１１内にその軸線に直角な方向から照射される。An ultraviolet source 30 is provided near the reaction vessel 11, and the ultraviolet rays from this ultraviolet source 30 are guided to a half mirror 32 via a mirror 31.
It is divided into two parts and introduced into the reaction vessel 11. That is,
One of the ultraviolet rays separated by the half mirror 32 is guided to the window 14 at one end of the reaction vessel 11 via the mirror 33, and is irradiated into the reaction vessel 11 from its axial direction (gas flow direction). Further, the other ultraviolet rays separated by the half mirror 32 are guided to a half mirror group 34 disposed on the side of the reaction vessel 11 in correspondence with the window 19.
The light is evenly divided into groups 34 and irradiated into the reaction vessel 11 from the respective windows 19 in a direction perpendicular to its axis.
従って、上記構成のＣＶＤ装置によれば、排気装置で反
応容器１１内を排気すると共にヒータ１７ζこより反応
容器１１を加熱した状態で、この反応容器１１内に供給
管２０から原料ガスを供給すると、原料ガスは層流とな
って排気管１５側へ流れ、紫外線照射による励起の下に
化学反応を生じてその生成物がサセプタ２５に保持され
た基板上に堆積する。この原料ガスの化学反応に際して
、窓１４及び１９から照射される紫外線照射の励起更に
は赤外線加熱による基板の熱を受けて反応が促進される
と共に生成物の再反応が防止される。Therefore, according to the CVD apparatus having the above configuration, when the inside of the reaction vessel 11 is evacuated by the exhaust device and the reaction vessel 11 is heated by the heater 17ζ, and the raw material gas is supplied into the reaction vessel 11 from the supply pipe 20, The raw material gas flows toward the exhaust pipe 15 in a laminar flow, and when excited by ultraviolet irradiation, a chemical reaction occurs, and its products are deposited on the substrate held by the susceptor 25. During this chemical reaction of the raw material gas, the reaction is accelerated by the excitation of the ultraviolet rays irradiated from the windows 14 and 19 and the heat of the substrate by infrared heating, and the re-reaction of the products is prevented.
そして、反応容器１１内を送給されて来る原料ガスに対
し、サセプタ２５に保持された複数の基板は互いに同一
の条件で、且つ、前方に他の基板が障害となることはな
く臨むこととなり、各基板には均一に反応底生物が堆積
する。更に、サセプタ２５は原料ガス流に対して先端が
突出した錐形状をなしていることから、原料ガスのＮ流
をあまり乱してしまうことはなく、渦等の発生を防止し
て反応生成物を均一に基板上に堆積させることができる
。The plurality of substrates held in the susceptor 25 face the raw material gas fed into the reaction vessel 11 under the same conditions and without any other substrates in front of them becoming an obstacle. , reactive benthic organisms are deposited uniformly on each substrate. Furthermore, since the susceptor 25 has a conical shape with its tip protruding from the source gas flow, it does not disturb the N flow of the source gas too much, prevents the generation of vortices, etc., and removes the reaction products. can be deposited uniformly on the substrate.
尚、上記実施例ではサセプタを三角錐形状としたが、こ
れ以外に円錐形状や四角錐形状等種々の錐体形状とする
ことができる。また、サセプタに設ける基板保持面の形
状及び数は任意である。In the above embodiment, the susceptor has a triangular pyramid shape, but it can also have various other pyramid shapes such as a conical shape and a quadrangular pyramid shape. Furthermore, the shape and number of substrate holding surfaces provided on the susceptor are arbitrary.
第１図は本発明の一実施例に係るサセプタを用いたＣＶ
Ｄ装置の縦断面図、第２図は第１図中の■−■矢視断面
図、第３図は本発明の一実施例に係るサセプタの正面図
、第４図は従来のＣＶＤ装置の一例を示す概略構成図、
第５図は従来のＣＶＤ装置の他の一例を示す概略構成図
である。
１１は反応容器、
２５はサセプタ、
２６は基板保持面である。FIG. 1 shows a CV using a susceptor according to an embodiment of the present invention.
FIG. 2 is a vertical cross-sectional view of the device D, FIG. 2 is a cross-sectional view along arrows - ■ in FIG. 1, FIG. 3 is a front view of a susceptor according to an embodiment of the present invention, and FIG. A schematic configuration diagram showing an example,
FIG. 5 is a schematic configuration diagram showing another example of a conventional CVD apparatus. 11 is a reaction container, 25 is a susceptor, and 26 is a substrate holding surface.
Claims (1)
設されて原料ガスの反応により生成された物質が堆積す
る基板を保持するサセプタと、を有するＣＶＤ装置にお
いて、前記サセプタは、原料ガス流の流れ方向に向かっ
て先端が突出した錐形状をなし、該原料ガス流の流れ方
向に対して傾斜した複数の基板保持面を有することを特
徴とするＣＶＤ装置のサセプタ構造。In a CVD apparatus that includes a reaction vessel in which raw material gases are reacted, and a susceptor disposed in the reaction vessel and holding a substrate on which a substance generated by the reaction of the raw material gases is deposited, the susceptor is configured to react with a raw material gas flow. A susceptor structure for a CVD apparatus, characterized in that it has a conical shape with a tip protruding toward the flow direction of the source gas, and has a plurality of substrate holding surfaces that are inclined with respect to the flow direction of the source gas flow.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21096788A JPH0258823A (en) | 1988-08-24 | 1988-08-24 | Construction of susceptor for cvd apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21096788A JPH0258823A (en) | 1988-08-24 | 1988-08-24 | Construction of susceptor for cvd apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0258823A true JPH0258823A (en) | 1990-02-28 |
Family
ID=16598086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21096788A Pending JPH0258823A (en) | 1988-08-24 | 1988-08-24 | Construction of susceptor for cvd apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0258823A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5681924A (en) * | 1979-12-10 | 1981-07-04 | Toshiba Corp | Susceptor for vertical type high frequency heating vapor phase growing system |
-
1988
- 1988-08-24 JP JP21096788A patent/JPH0258823A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5681924A (en) * | 1979-12-10 | 1981-07-04 | Toshiba Corp | Susceptor for vertical type high frequency heating vapor phase growing system |
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