JPS5679444A - Semiconductor device and production thereof - Google Patents

Semiconductor device and production thereof

Info

Publication number
JPS5679444A
JPS5679444A JP15553879A JP15553879A JPS5679444A JP S5679444 A JPS5679444 A JP S5679444A JP 15553879 A JP15553879 A JP 15553879A JP 15553879 A JP15553879 A JP 15553879A JP S5679444 A JPS5679444 A JP S5679444A
Authority
JP
Japan
Prior art keywords
section
high voltage
layer
element section
resisting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15553879A
Other languages
Japanese (ja)
Inventor
Sumio Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15553879A priority Critical patent/JPS5679444A/en
Publication of JPS5679444A publication Critical patent/JPS5679444A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To improve the reliability without impairing high integration degree by keeping an anti-inversion layer apart from an impurities diffused layer for high voltage resisting elements when a field oxide film is formed on a semiconductor substrate through the layer. CONSTITUTION:A thin SiO2 film 16 and an Si3N4 film 17 are laminated on a p type Si substrate 11 and undergoes a patterning to remove all but only leaving sections on a high voltage resisting element section A and a normal voltage section B. Only the laminated films on the high voltage resisting element section A are surrounded with an ion resisting injected mask made up of a resist or the like and B ion is injected to form p<+> type antiinversion layers 13 on a field region in the exposed section of the substrate 11. Then, after removal of the mask 17, a field oxide film 12 is provided by high temperature oxidation and the pattern is removed from the laminated films so that n<+> type regions 14a and 14b are respectively diffused into the high voltage resisting element section A and the normal voltage section B sandwitched by the layers 13. In this manner, in the element section A, the region 14a is kept apart from the antiinversion layer 13.
JP15553879A 1979-12-03 1979-12-03 Semiconductor device and production thereof Pending JPS5679444A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15553879A JPS5679444A (en) 1979-12-03 1979-12-03 Semiconductor device and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15553879A JPS5679444A (en) 1979-12-03 1979-12-03 Semiconductor device and production thereof

Publications (1)

Publication Number Publication Date
JPS5679444A true JPS5679444A (en) 1981-06-30

Family

ID=15608245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15553879A Pending JPS5679444A (en) 1979-12-03 1979-12-03 Semiconductor device and production thereof

Country Status (1)

Country Link
JP (1) JPS5679444A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5164876A (en) * 1974-12-03 1976-06-04 Nippon Electric Co ZETSUENGEETOGATADENKAIKOKAHANDOTAISOCHINOSEIZOHOHO
JPS54155538A (en) * 1978-05-30 1979-12-07 Murakami Kaimeido Kk Automatic dazzling preventive mirror provided with automatic changeeover sensitivity correcting mechanism

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5164876A (en) * 1974-12-03 1976-06-04 Nippon Electric Co ZETSUENGEETOGATADENKAIKOKAHANDOTAISOCHINOSEIZOHOHO
JPS54155538A (en) * 1978-05-30 1979-12-07 Murakami Kaimeido Kk Automatic dazzling preventive mirror provided with automatic changeeover sensitivity correcting mechanism

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