JPS56116618A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56116618A JPS56116618A JP1919780A JP1919780A JPS56116618A JP S56116618 A JPS56116618 A JP S56116618A JP 1919780 A JP1919780 A JP 1919780A JP 1919780 A JP1919780 A JP 1919780A JP S56116618 A JPS56116618 A JP S56116618A
- Authority
- JP
- Japan
- Prior art keywords
- poly
- film
- sio2
- substrate
- oxidized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To provide a thermally oxidized film without disturbing impurity distribution by eliminating an SiO2 film used for the formation of semiconductor circuit elements wherein an Si substrate is covered with a poly Si at 1,000 deg.C or below to oxidize the poly Si. CONSTITUTION:An SiO2 film is removed after providing a required diffusion layer on an Si substrate by using the SiO2 film. A poly Si film 7 is formed at 1,000 deg.C or below to apply Si3N4 mask 8 and the film 7 is changed to SiO2 7' by selectively oxidizing the poly Si at 1,000 deg.C or below. Al electrodes 9 are installed in the SiO2 7' by removing the mask 8. Then, treatment is done at 600 deg.C or below to apply the electrodes and the poly Si. In this composition, the Si substrate will not be oxidized and only the poly Si in which impurities are not diffused will be oxidized. Therefore, the change in impurity distribution will be prevented. And reliability will be improved as simple and accurate control during manufacturing processes for each characteristic of circuit elements is attained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1919780A JPS56116618A (en) | 1980-02-20 | 1980-02-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1919780A JPS56116618A (en) | 1980-02-20 | 1980-02-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56116618A true JPS56116618A (en) | 1981-09-12 |
Family
ID=11992619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1919780A Pending JPS56116618A (en) | 1980-02-20 | 1980-02-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56116618A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59149045A (en) * | 1983-02-16 | 1984-08-25 | Nec Corp | Semiconductor device |
-
1980
- 1980-02-20 JP JP1919780A patent/JPS56116618A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59149045A (en) * | 1983-02-16 | 1984-08-25 | Nec Corp | Semiconductor device |
| JPH0425711B2 (en) * | 1983-02-16 | 1992-05-01 | Nippon Electric Co |
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