JPS56129486A - Solid state pickup element and its manufacture - Google Patents
Solid state pickup element and its manufactureInfo
- Publication number
- JPS56129486A JPS56129486A JP3380680A JP3380680A JPS56129486A JP S56129486 A JPS56129486 A JP S56129486A JP 3380680 A JP3380680 A JP 3380680A JP 3380680 A JP3380680 A JP 3380680A JP S56129486 A JPS56129486 A JP S56129486A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- type
- forming
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To obtain increased electric signal though increasing the P-N junction capacitance of photodiode or P-N-diode, by forming the region of opposite conduction type to the region formed with inpurity having high concentration with the same conduction type as the substrate. CONSTITUTION:After forming SiO2 film 21 and Si3N4 film 22 having a prescribed thickness on P type silicon substrate 20, the photoresist film 23 except the field oxide film forming region is left with photoetching technology, and the Si3N4 film 22 is selectively rejected by taking the film 23 as a mask. Specified boron is ion-injected by taking the resist film 23 as a mask to form the P type region 24 as the injection region, and boron is ion-injected to the photodiode forming region except the gate forming region and photodiode forming region, by leaving the resist film 25 to form the P type region 26. Next, after removing the resist film 25, SiO2 film 27, and P type regions 28, 29 are formed with diffusion, allowing to increase the junction capacitance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3380680A JPS56129486A (en) | 1980-03-17 | 1980-03-17 | Solid state pickup element and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3380680A JPS56129486A (en) | 1980-03-17 | 1980-03-17 | Solid state pickup element and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56129486A true JPS56129486A (en) | 1981-10-09 |
Family
ID=12396716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3380680A Pending JPS56129486A (en) | 1980-03-17 | 1980-03-17 | Solid state pickup element and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56129486A (en) |
-
1980
- 1980-03-17 JP JP3380680A patent/JPS56129486A/en active Pending
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