JPS5626443A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5626443A JPS5626443A JP10170879A JP10170879A JPS5626443A JP S5626443 A JPS5626443 A JP S5626443A JP 10170879 A JP10170879 A JP 10170879A JP 10170879 A JP10170879 A JP 10170879A JP S5626443 A JPS5626443 A JP S5626443A
- Authority
- JP
- Japan
- Prior art keywords
- poly
- si3n4
- masks
- films
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE:To obtain a fine element layer having a little intrusion to Si3N4 masks by providing Si3N4 masks on a monocrystalline Si through a poly Si layer wherein selective oxidation is made. CONSTITUTION:A poly Si film 5 is formed on a monocrystalline Si substrate 9 and Si3N4 masks 1 are applied to oxide. The poly Si 5 having small diffusion resistance of an oxide agent such as O2 or H2O or the like is provided. Therefore, the intrusion 7 of an oxide film to the lower part of the Si3N4 films 1 is controlled and field oxide films 8 similar to the opening pattern of the masks 1 will be obtained. The poly Si 5 successively protects the substrate 9 at the time of photo etching to the Si3N4 films 1. Next, an Si substrate surface isolated by the field oxide films 8 is finished by converting the poly Si into SiO2 by oxidation. In this composition, a fine pattern will be formed even by an element isolation method by selective oxidation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10170879A JPS5626443A (en) | 1979-08-09 | 1979-08-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10170879A JPS5626443A (en) | 1979-08-09 | 1979-08-09 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5626443A true JPS5626443A (en) | 1981-03-14 |
Family
ID=14307799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10170879A Pending JPS5626443A (en) | 1979-08-09 | 1979-08-09 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5626443A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5892364A (en) * | 1981-11-30 | 1983-06-01 | 東レ株式会社 | Selective permeable hollow yarn membrane |
JPS59222159A (en) * | 1983-06-02 | 1984-12-13 | 東レ株式会社 | Permselective hollow yarn membrane |
-
1979
- 1979-08-09 JP JP10170879A patent/JPS5626443A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5892364A (en) * | 1981-11-30 | 1983-06-01 | 東レ株式会社 | Selective permeable hollow yarn membrane |
JPH0360530B2 (en) * | 1981-11-30 | 1991-09-17 | Toray Industries | |
JPS59222159A (en) * | 1983-06-02 | 1984-12-13 | 東レ株式会社 | Permselective hollow yarn membrane |
JPH0525510B2 (en) * | 1983-06-02 | 1993-04-13 | Toray Industries |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5626443A (en) | Manufacture of semiconductor device | |
JPS57155769A (en) | Manufacture of semiconductor device | |
JPS55165637A (en) | Manufacture of semiconductor integrated circuit | |
JPS56115547A (en) | Manufacture of semiconductor device | |
JPS5779642A (en) | Manufacture of semiconductor device | |
JPS5643744A (en) | Manufacture of semiconductor device | |
JPS57206071A (en) | Semiconductor device and manufacture thereof | |
JPS5779641A (en) | Manufacture of semiconductor device | |
JPS5645051A (en) | Manufacture of semiconductor device | |
JPS5779643A (en) | Semiconductor device | |
JPS567482A (en) | Manufacturing of semiconductor device | |
JPS5664431A (en) | Manufacture of semiconductor device | |
JPS5779640A (en) | Manufacture of semiconductor device | |
JPS56111265A (en) | Manufacture of semiconductor device | |
JPS56133837A (en) | Semiconductor device and manufacture therefor | |
JPS5633826A (en) | Manufacture of target | |
JPS56116618A (en) | Manufacture of semiconductor device | |
JPS5762543A (en) | Manufacture of semiconductor device | |
JPS57193039A (en) | Manufacture of semiconductor device | |
JPS56114372A (en) | Manufacture of semiconductor device | |
JPS56164551A (en) | Manufacture of semiconductor device | |
JPS55156327A (en) | Manufacture for semiconductor | |
JPS5776866A (en) | Manufacture of semiconductor device | |
JPS5660062A (en) | Manufacture of semiconductor device | |
JPS5667939A (en) | Preparation method of semiconductor system |