JPS5661131A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5661131A
JPS5661131A JP13913479A JP13913479A JPS5661131A JP S5661131 A JPS5661131 A JP S5661131A JP 13913479 A JP13913479 A JP 13913479A JP 13913479 A JP13913479 A JP 13913479A JP S5661131 A JPS5661131 A JP S5661131A
Authority
JP
Japan
Prior art keywords
region
getterring
effect
semiconductor elements
around
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13913479A
Other languages
Japanese (ja)
Inventor
Yoichi Akasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13913479A priority Critical patent/JPS5661131A/en
Publication of JPS5661131A publication Critical patent/JPS5661131A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To raise getterring effect by applying laser or charged particles to a part of the major surface of a substrate formed semiconductor elements. CONSTITUTION:Effective getterring effect will be noted by providing laser irradiation region formed to eliminate defects around an active region of semiconductor elements and it will serve to maintain good elements characteristics. In this method, a conventional method of irradiation to the whole rear side is not applied. For example, a getterring region may be formed at a nonactive region around dicing wires or the getterring region may be provided on the surface of a P type isolation layer 14 for a P-N junction interelement isolation bipolar IC formed on a P type substrate 11. This getterring region forming method is simple and has high effect and prevents the active region from detects causing during element manufacturing processes.
JP13913479A 1979-10-25 1979-10-25 Manufacture of semiconductor device Pending JPS5661131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13913479A JPS5661131A (en) 1979-10-25 1979-10-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13913479A JPS5661131A (en) 1979-10-25 1979-10-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5661131A true JPS5661131A (en) 1981-05-26

Family

ID=15238319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13913479A Pending JPS5661131A (en) 1979-10-25 1979-10-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5661131A (en)

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