JPS5661131A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5661131A JPS5661131A JP13913479A JP13913479A JPS5661131A JP S5661131 A JPS5661131 A JP S5661131A JP 13913479 A JP13913479 A JP 13913479A JP 13913479 A JP13913479 A JP 13913479A JP S5661131 A JPS5661131 A JP S5661131A
- Authority
- JP
- Japan
- Prior art keywords
- region
- getterring
- effect
- semiconductor elements
- around
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000002955 isolation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000007796 conventional method Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To raise getterring effect by applying laser or charged particles to a part of the major surface of a substrate formed semiconductor elements. CONSTITUTION:Effective getterring effect will be noted by providing laser irradiation region formed to eliminate defects around an active region of semiconductor elements and it will serve to maintain good elements characteristics. In this method, a conventional method of irradiation to the whole rear side is not applied. For example, a getterring region may be formed at a nonactive region around dicing wires or the getterring region may be provided on the surface of a P type isolation layer 14 for a P-N junction interelement isolation bipolar IC formed on a P type substrate 11. This getterring region forming method is simple and has high effect and prevents the active region from detects causing during element manufacturing processes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13913479A JPS5661131A (en) | 1979-10-25 | 1979-10-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13913479A JPS5661131A (en) | 1979-10-25 | 1979-10-25 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5661131A true JPS5661131A (en) | 1981-05-26 |
Family
ID=15238319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13913479A Pending JPS5661131A (en) | 1979-10-25 | 1979-10-25 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5661131A (en) |
-
1979
- 1979-10-25 JP JP13913479A patent/JPS5661131A/en active Pending
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