JPS5643740A - Semiconductor wafer - Google Patents

Semiconductor wafer

Info

Publication number
JPS5643740A
JPS5643740A JP11899779A JP11899779A JPS5643740A JP S5643740 A JPS5643740 A JP S5643740A JP 11899779 A JP11899779 A JP 11899779A JP 11899779 A JP11899779 A JP 11899779A JP S5643740 A JPS5643740 A JP S5643740A
Authority
JP
Japan
Prior art keywords
metal film
scrive
semiconductor wafer
cutting
lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11899779A
Other languages
Japanese (ja)
Inventor
Kenzo Yamanari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11899779A priority Critical patent/JPS5643740A/en
Publication of JPS5643740A publication Critical patent/JPS5643740A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To prevent a turn over of a metal film and to reduce the generation of wrong device at a cutting off time by a method wherein lines of slits without a metal film are arranged along and at a right angle of a scrive lines of wafers which coated a metal film in the scrive region. CONSTITUTION:The metal film 2 is formed in the scrive region of the semiconductor wafer 1 for the electric characteristic, the manufacture process, or the cost reduction. Further, at the cutting off time of the wafer 1, the portion 32 without the metal film is provided along, or at the right angle of the scrive line 5 not so as to the metal film (Al etc.) would turn over and contact with a bonding wire or the wiring inside of a pellet. For instance, this slit 32 is formed by the etching. Thus, the generation of the wrong device can be prevented.
JP11899779A 1979-09-17 1979-09-17 Semiconductor wafer Pending JPS5643740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11899779A JPS5643740A (en) 1979-09-17 1979-09-17 Semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11899779A JPS5643740A (en) 1979-09-17 1979-09-17 Semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5643740A true JPS5643740A (en) 1981-04-22

Family

ID=14750439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11899779A Pending JPS5643740A (en) 1979-09-17 1979-09-17 Semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5643740A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125040A (en) * 1984-11-22 1986-06-12 Hitachi Ltd Semiconductor device
JPS61150268A (en) * 1984-12-24 1986-07-08 Hitachi Ltd Manufacture of semiconductor device
JPS6373536A (en) * 1986-09-16 1988-04-04 Seiko Epson Corp Semiconductor integrated circuit
EP0343720A2 (en) * 1988-05-23 1989-11-29 Koninklijke Philips Electronics N.V. Semiconductor wafer and method of dividing it
JPH03139862A (en) * 1989-10-25 1991-06-14 Fujitsu Ltd Semiconductor device
US5096855A (en) * 1988-05-23 1992-03-17 U.S. Philips Corporation Method of dicing semiconductor wafers which produces shards less than 10 microns in size
US5206181A (en) * 1991-06-03 1993-04-27 Motorola, Inc. Method for manufacturing a semiconductor device with a slotted metal test pad to prevent lift-off during wafer scribing

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125040A (en) * 1984-11-22 1986-06-12 Hitachi Ltd Semiconductor device
JPS61150268A (en) * 1984-12-24 1986-07-08 Hitachi Ltd Manufacture of semiconductor device
JPS6373536A (en) * 1986-09-16 1988-04-04 Seiko Epson Corp Semiconductor integrated circuit
EP0343720A2 (en) * 1988-05-23 1989-11-29 Koninklijke Philips Electronics N.V. Semiconductor wafer and method of dividing it
US5096855A (en) * 1988-05-23 1992-03-17 U.S. Philips Corporation Method of dicing semiconductor wafers which produces shards less than 10 microns in size
JPH03139862A (en) * 1989-10-25 1991-06-14 Fujitsu Ltd Semiconductor device
US5206181A (en) * 1991-06-03 1993-04-27 Motorola, Inc. Method for manufacturing a semiconductor device with a slotted metal test pad to prevent lift-off during wafer scribing

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