JPS5575281A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS5575281A
JPS5575281A JP14883878A JP14883878A JPS5575281A JP S5575281 A JPS5575281 A JP S5575281A JP 14883878 A JP14883878 A JP 14883878A JP 14883878 A JP14883878 A JP 14883878A JP S5575281 A JPS5575281 A JP S5575281A
Authority
JP
Japan
Prior art keywords
cleavage
layer
layers
type
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14883878A
Other languages
Japanese (ja)
Other versions
JPS5635316B2 (en
Inventor
Hajime Imai
Masahiro Morimoto
Takao Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14883878A priority Critical patent/JPS5575281A/en
Priority to DE7979301493T priority patent/DE2964810D1/en
Priority to EP79301493A priority patent/EP0007805B1/en
Publication of JPS5575281A publication Critical patent/JPS5575281A/en
Priority to US06/223,152 priority patent/US4356210A/en
Publication of JPS5635316B2 publication Critical patent/JPS5635316B2/ja
Priority to US06/389,916 priority patent/US4435443A/en
Granted legal-status Critical Current

Links

Landscapes

  • Dicing (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To prevent a wafer from cracks taking place when cleavage is applied by providing thick electrode layers like bands on an electrode layer of a wafer;
CONSTITUTION: An n-type GaAs layer 3, an n-type GaAlAs layer 4, a p-type GaAlAs layer 5, light emitting sections 6, a p-type GaAlAs layer 7, n-type GaAs layers 8, p-type diffused layers 9 and gold electrode layers 1, 10 are produced, Cleavage is then caused along band-like gold electrode layers 13 as shown by a one- dot chain line A. Even if bending stress is applied due to the cleavage, the stress is prevented from concentrating. Because the electrode layers 13 has a high strength against the stress, no amorphous crack takes place. A protective film is provided on the side lateral surface of a wafer after the cleavage so that the thin electrode layer 1 is removed by ions and the thick electrode layer 13 is made thin. Therefore, other cleavage can be easily caused in a direction perpendicular to the longitudinal direction of the electrode layer 13 as shown by a two-dot chain line B after the protective film is provided.
COPYRIGHT: (C)1980,JPO&Japio
JP14883878A 1978-07-29 1978-12-01 Manufacturing method of semiconductor device Granted JPS5575281A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP14883878A JPS5575281A (en) 1978-12-01 1978-12-01 Manufacturing method of semiconductor device
DE7979301493T DE2964810D1 (en) 1978-07-29 1979-07-26 A method of coating side walls of semiconductor devices
EP79301493A EP0007805B1 (en) 1978-07-29 1979-07-26 A method of coating side walls of semiconductor devices
US06/223,152 US4356210A (en) 1978-07-29 1981-01-07 Method for forming a protecting film on side walls of a semiconductor device
US06/389,916 US4435443A (en) 1978-07-29 1982-06-18 Method for forming a protecting film on side walls of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14883878A JPS5575281A (en) 1978-12-01 1978-12-01 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5575281A true JPS5575281A (en) 1980-06-06
JPS5635316B2 JPS5635316B2 (en) 1981-08-15

Family

ID=15461856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14883878A Granted JPS5575281A (en) 1978-07-29 1978-12-01 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5575281A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131583A (en) * 1984-11-30 1986-06-19 Sony Corp Manufacture of semiconductor laser
WO2008099838A1 (en) * 2007-02-14 2008-08-21 Showa Denko K.K. Method for manufacturing compound semiconductor element, and compound semiconductor element
WO2015063655A1 (en) * 2013-10-29 2015-05-07 Koninklijke Philips N.V. Separating a wafer of light emitting devices

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131583A (en) * 1984-11-30 1986-06-19 Sony Corp Manufacture of semiconductor laser
WO2008099838A1 (en) * 2007-02-14 2008-08-21 Showa Denko K.K. Method for manufacturing compound semiconductor element, and compound semiconductor element
US8062960B2 (en) 2007-02-14 2011-11-22 Showa Denko K.K. Compound semiconductor device and method of manufacturing compound semiconductor device
WO2015063655A1 (en) * 2013-10-29 2015-05-07 Koninklijke Philips N.V. Separating a wafer of light emitting devices
US9773941B2 (en) 2013-10-29 2017-09-26 Koninklijke Philips N.V. Separating a wafer of light emitting devices
TWI642202B (en) * 2013-10-29 2018-11-21 皇家飛利浦有限公司 Separating a wafer of light emitting devices

Also Published As

Publication number Publication date
JPS5635316B2 (en) 1981-08-15

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