JPS5640244A - Beam scanning correction at electron beam exposure - Google Patents

Beam scanning correction at electron beam exposure

Info

Publication number
JPS5640244A
JPS5640244A JP11769179A JP11769179A JPS5640244A JP S5640244 A JPS5640244 A JP S5640244A JP 11769179 A JP11769179 A JP 11769179A JP 11769179 A JP11769179 A JP 11769179A JP S5640244 A JPS5640244 A JP S5640244A
Authority
JP
Japan
Prior art keywords
distance
electron beam
sample
distortion
deflection angles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11769179A
Other languages
Japanese (ja)
Inventor
Tadao Kato
Takaaki Katou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11769179A priority Critical patent/JPS5640244A/en
Publication of JPS5640244A publication Critical patent/JPS5640244A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To form a pattern with high accuracy even if distortion exists by measuring the distortion of a sample from the deflection angles of an electron beam at the time of positioning wherein an electron beam scanning is corrected. CONSTITUTION:Predetermined relation will be established among the distance L between reference stamps 7a and 7b, the electric field intensity E of deflecting plates 4, and the deflection angles theta5, theta6 at an electron beam. The distance L is constant even if the distance W between the lower end of the deflecting plates 4 and the surface of the sample 5 varies by the distortion of the sample 5. Therefore, with the distance W increased, the deflection angles theta5, theta6 will be reduced. Then, the distance W will be decided by measuring the values of the angles theta5, theta6 by the electric field intensity E. In this way, the whole sample will always be exposed at the optimum condition and a high accuracy pattern will be formed by comparing the deflection angles with a signal at a reference angle to generate a collection signal and by exposing the distortion under the corrected condition.
JP11769179A 1979-09-11 1979-09-11 Beam scanning correction at electron beam exposure Pending JPS5640244A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11769179A JPS5640244A (en) 1979-09-11 1979-09-11 Beam scanning correction at electron beam exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11769179A JPS5640244A (en) 1979-09-11 1979-09-11 Beam scanning correction at electron beam exposure

Publications (1)

Publication Number Publication Date
JPS5640244A true JPS5640244A (en) 1981-04-16

Family

ID=14717903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11769179A Pending JPS5640244A (en) 1979-09-11 1979-09-11 Beam scanning correction at electron beam exposure

Country Status (1)

Country Link
JP (1) JPS5640244A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186331A (en) * 1981-05-12 1982-11-16 Jeol Ltd Manufacture of semiconductor device
JPS58114425A (en) * 1981-12-28 1983-07-07 Fujitsu Ltd Electron beam exposure device
US5141830A (en) * 1989-09-20 1992-08-25 Jeol Ltd. Charged-particle beam lithography method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367365A (en) * 1976-11-29 1978-06-15 Nippon Telegr & Teleph Corp <Ntt> Correcting method for beam position

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367365A (en) * 1976-11-29 1978-06-15 Nippon Telegr & Teleph Corp <Ntt> Correcting method for beam position

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186331A (en) * 1981-05-12 1982-11-16 Jeol Ltd Manufacture of semiconductor device
JPH0345527B2 (en) * 1981-05-12 1991-07-11 Nippon Electron Optics Lab
JPS58114425A (en) * 1981-12-28 1983-07-07 Fujitsu Ltd Electron beam exposure device
JPS6234134B2 (en) * 1981-12-28 1987-07-24 Fujitsu Ltd
US5141830A (en) * 1989-09-20 1992-08-25 Jeol Ltd. Charged-particle beam lithography method

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