JPS57186331A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57186331A
JPS57186331A JP7123581A JP7123581A JPS57186331A JP S57186331 A JPS57186331 A JP S57186331A JP 7123581 A JP7123581 A JP 7123581A JP 7123581 A JP7123581 A JP 7123581A JP S57186331 A JPS57186331 A JP S57186331A
Authority
JP
Japan
Prior art keywords
electron beam
exposure
auxiliary memory
computer
mark
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7123581A
Other languages
Japanese (ja)
Other versions
JPH0345527B2 (en
Inventor
Sakae Miyauchi
Nobuo Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK filed Critical Jeol Ltd
Priority to JP7123581A priority Critical patent/JPS57186331A/en
Publication of JPS57186331A publication Critical patent/JPS57186331A/en
Publication of JPH0345527B2 publication Critical patent/JPH0345527B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration

Abstract

PURPOSE:To enhance the pattern superposing accuracy on the same wafer in an optical exposure and an electron beam exposure by supplying an addition signal of an illumination position designation signal formed by a computer and a strain value data read by an auxiliary memory corresponding to a drawing field to a deflecting electrode forming an electron beam exposure unit. CONSTITUTION:A composite drawing is formed based on a specification, data and mark are drawn by a CAD device, a rectile with a pattern generator, and is transferred to an exposure material by a stepper. Subsequently, the transferred mark is detected with an electron beam, the strain is measured, the obtained strain value is stored in an auxiliary memory, is read, and a superposing exposure with the electron beam is performed. Thus, a computer 7 is connected to the coil 4 of a blanking coil 4, a converging lens 3 and a deflecting electrode 5 disposed between an electron gun 2 and a wafer 2 on a movable table 6, the output is applied directly or through the auxiliary memory 9 to an adding circuit 8, and the addition signal from the circuit 8 is supplied to the electrode 5.
JP7123581A 1981-05-12 1981-05-12 Manufacture of semiconductor device Granted JPS57186331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7123581A JPS57186331A (en) 1981-05-12 1981-05-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7123581A JPS57186331A (en) 1981-05-12 1981-05-12 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57186331A true JPS57186331A (en) 1982-11-16
JPH0345527B2 JPH0345527B2 (en) 1991-07-11

Family

ID=13454826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7123581A Granted JPS57186331A (en) 1981-05-12 1981-05-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57186331A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178726A (en) * 1983-03-29 1984-10-11 Toshiba Corp Manufacture of pattern transfer mask
JPS6124231A (en) * 1984-07-13 1986-02-01 Hitachi Ltd Electron beam patterning device
JPS6258621A (en) * 1985-09-09 1987-03-14 Toshiba Corp Fine pattern forming method
JPS6351635A (en) * 1986-08-20 1988-03-04 Yokogawa Hewlett Packard Ltd Lithographic method
US5908733A (en) * 1996-10-17 1999-06-01 Nec Corporation Method of electron beam exposure for superimposing second pattern over existing pattern

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0740962Y2 (en) * 1990-10-03 1995-09-20 オーツタイヤ株式会社 Light guide plate device
JP2630714B2 (en) * 1992-10-08 1997-07-16 茶谷産業株式会社 Surface lighting device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534430A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Positioning method in electron beam exposure
JPS5640244A (en) * 1979-09-11 1981-04-16 Mitsubishi Electric Corp Beam scanning correction at electron beam exposure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534430A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Positioning method in electron beam exposure
JPS5640244A (en) * 1979-09-11 1981-04-16 Mitsubishi Electric Corp Beam scanning correction at electron beam exposure

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178726A (en) * 1983-03-29 1984-10-11 Toshiba Corp Manufacture of pattern transfer mask
JPS6124231A (en) * 1984-07-13 1986-02-01 Hitachi Ltd Electron beam patterning device
JPS6258621A (en) * 1985-09-09 1987-03-14 Toshiba Corp Fine pattern forming method
JPS6351635A (en) * 1986-08-20 1988-03-04 Yokogawa Hewlett Packard Ltd Lithographic method
US5908733A (en) * 1996-10-17 1999-06-01 Nec Corporation Method of electron beam exposure for superimposing second pattern over existing pattern
US5949079A (en) * 1996-10-17 1999-09-07 Nec Corporation Method of and an apparatus for electron beam exposure

Also Published As

Publication number Publication date
JPH0345527B2 (en) 1991-07-11

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