JPS5749220A - Plasma gas phase method - Google Patents

Plasma gas phase method

Info

Publication number
JPS5749220A
JPS5749220A JP12438280A JP12438280A JPS5749220A JP S5749220 A JPS5749220 A JP S5749220A JP 12438280 A JP12438280 A JP 12438280A JP 12438280 A JP12438280 A JP 12438280A JP S5749220 A JPS5749220 A JP S5749220A
Authority
JP
Japan
Prior art keywords
reaction
furnace
tube
boat
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12438280A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP12438280A priority Critical patent/JPS5749220A/en
Publication of JPS5749220A publication Critical patent/JPS5749220A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Abstract

PURPOSE:To reduce the frequency of disassembling and cleaning of a reaction furnace by forming double tube at the upstream side of the substrate of the reaction furnace used when an amorphous film is formed on the substrate by a plasma gas phase method, water-cooling it, and removing compound adhered to the furnace wall with heated nitrogen fluoride gas. CONSTITUTION:A quartz reaction tube 5 for forming an amorphous film made of Si, Ge or the like on the surface of a plurality of semiconductor substrates placed on a boat 8 is composed as below. That is, a resistance radiation heating type electric furnace 7 is provided on the outer periphery of the reaction tube 5 corresponding to the position of the boat 8, double water-cooling tube made of outer and inner tubes 16 and 17 is formed at the upstream side of the boat 8, and a high frequency induction furnace 6 is disposed as a plasma generation source is disposed on the outer periphery of the double tube. Thus, raw material and carrier gas are introduced from inlets 1-4, are then heated to form the desired films on the substrates 10, reactive products 9 adhered on the tubular wall are simultaneously removed by the plasma reaction of the nitrogen fluoride gas at 200-1,000 deg.C, and are exhausted through valves 11, 12 from a pump 13.
JP12438280A 1980-09-08 1980-09-08 Plasma gas phase method Pending JPS5749220A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12438280A JPS5749220A (en) 1980-09-08 1980-09-08 Plasma gas phase method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12438280A JPS5749220A (en) 1980-09-08 1980-09-08 Plasma gas phase method

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP100286A Division JPS61235579A (en) 1986-01-06 1986-01-06 Method for cleaning inside of reaction furnace
JP100186A Division JPS61235578A (en) 1986-01-06 1986-01-06 Method for cleaning inside of reaction furnace

Publications (1)

Publication Number Publication Date
JPS5749220A true JPS5749220A (en) 1982-03-23

Family

ID=14884016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12438280A Pending JPS5749220A (en) 1980-09-08 1980-09-08 Plasma gas phase method

Country Status (1)

Country Link
JP (1) JPS5749220A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114726A (en) * 1984-06-29 1986-01-22 Fujitsu Ltd Treatment of semiconductor substrate
JPS62127397A (en) * 1985-11-22 1987-06-09 アドヴアンスド　セミコンダクタ−　マテイリアルズ　アメリカ　インコ−ポレ−テツド Nitrogen trifluoride as in-site detergent and method for washing ship shaped container and pipe using the same
JPS63181331A (en) * 1987-01-23 1988-07-26 Hitachi Ltd Apparatus for manufacturing semiconductor
JPS6470062A (en) * 1987-09-11 1989-03-15 Daicel Chem Bacteriostatic deodorizing composition
US5807587A (en) * 1996-01-16 1998-09-15 Cox; James P. Aldehyde and/or antimicrobial composition for reduction of animal waste odors
US6551582B2 (en) 2001-01-23 2003-04-22 Sumitomo Chemical Company, Limited Deodorant composition

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114726A (en) * 1984-06-29 1986-01-22 Fujitsu Ltd Treatment of semiconductor substrate
JPS62127397A (en) * 1985-11-22 1987-06-09 アドヴアンスド　セミコンダクタ−　マテイリアルズ　アメリカ　インコ−ポレ−テツド Nitrogen trifluoride as in-site detergent and method for washing ship shaped container and pipe using the same
JPS63181331A (en) * 1987-01-23 1988-07-26 Hitachi Ltd Apparatus for manufacturing semiconductor
JPS6470062A (en) * 1987-09-11 1989-03-15 Daicel Chem Bacteriostatic deodorizing composition
JPH0416181B2 (en) * 1987-09-11 1992-03-23 Daicel Chem
US5807587A (en) * 1996-01-16 1998-09-15 Cox; James P. Aldehyde and/or antimicrobial composition for reduction of animal waste odors
US6551582B2 (en) 2001-01-23 2003-04-22 Sumitomo Chemical Company, Limited Deodorant composition

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