JPS56166935A - Apparatus for vapor growth under reduced pressure - Google Patents

Apparatus for vapor growth under reduced pressure

Info

Publication number
JPS56166935A
JPS56166935A JP6923280A JP6923280A JPS56166935A JP S56166935 A JPS56166935 A JP S56166935A JP 6923280 A JP6923280 A JP 6923280A JP 6923280 A JP6923280 A JP 6923280A JP S56166935 A JPS56166935 A JP S56166935A
Authority
JP
Japan
Prior art keywords
gas
plasma
heat reaction
vapor growth
reaction part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6923280A
Other languages
Japanese (ja)
Other versions
JPS6128372B2 (en
Inventor
Hirokazu Miyoshi
Masahiro Yoneda
Kazuo Ito
Kazuo Mizuguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6923280A priority Critical patent/JPS56166935A/en
Priority to DE19813118848 priority patent/DE3118848C2/en
Publication of JPS56166935A publication Critical patent/JPS56166935A/en
Publication of JPS6128372B2 publication Critical patent/JPS6128372B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To form a uniform coating efficiently by providing a plasma generating apparatus between a heat reaction part of a reactor tube and a gas supply source to effectively carry out vapor growth.
CONSTITUTION: For example, a monosilane and nitrogen as a carrier gas are introduced from a gas introducing pipe 3. The introduced gas generates electric discharge between electrodes 11 prior to reaching to a heat reaction part having a wafer placed thereon and converted to a plasma condition. Succeedingly, the plasma gas generates heat reaction in the heat reaction part in a high temp. condition, and polycrystalline silicon coating is grown on the silicon wafer 8. Because the activity of the gas is enhanced by plasma generation, reaction is facilitated and a desired coating is grown efficiently.
COPYRIGHT: (C)1981,JPO&Japio
JP6923280A 1980-05-12 1980-05-23 Apparatus for vapor growth under reduced pressure Granted JPS56166935A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP6923280A JPS56166935A (en) 1980-05-23 1980-05-23 Apparatus for vapor growth under reduced pressure
DE19813118848 DE3118848C2 (en) 1980-05-12 1981-05-12 Low pressure coating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6923280A JPS56166935A (en) 1980-05-23 1980-05-23 Apparatus for vapor growth under reduced pressure

Publications (2)

Publication Number Publication Date
JPS56166935A true JPS56166935A (en) 1981-12-22
JPS6128372B2 JPS6128372B2 (en) 1986-06-30

Family

ID=13396775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6923280A Granted JPS56166935A (en) 1980-05-12 1980-05-23 Apparatus for vapor growth under reduced pressure

Country Status (1)

Country Link
JP (1) JPS56166935A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6067673A (en) * 1983-09-22 1985-04-18 Semiconductor Energy Lab Co Ltd Plasma gaseous phase reaction method
US4657616A (en) * 1985-05-17 1987-04-14 Benzing Technologies, Inc. In-situ CVD chamber cleaner
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5628637A (en) * 1979-08-16 1981-03-20 Shunpei Yamazaki Film making method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5628637A (en) * 1979-08-16 1981-03-20 Shunpei Yamazaki Film making method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6067673A (en) * 1983-09-22 1985-04-18 Semiconductor Energy Lab Co Ltd Plasma gaseous phase reaction method
JPH0344148B2 (en) * 1983-09-22 1991-07-05 Handotai Energy Kenkyusho
US4657616A (en) * 1985-05-17 1987-04-14 Benzing Technologies, Inc. In-situ CVD chamber cleaner
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning

Also Published As

Publication number Publication date
JPS6128372B2 (en) 1986-06-30

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