GB1160895A - Coating Surfaces by Vapour Deposition - Google Patents
Coating Surfaces by Vapour DepositionInfo
- Publication number
- GB1160895A GB1160895A GB36095/66A GB3609566A GB1160895A GB 1160895 A GB1160895 A GB 1160895A GB 36095/66 A GB36095/66 A GB 36095/66A GB 3609566 A GB3609566 A GB 3609566A GB 1160895 A GB1160895 A GB 1160895A
- Authority
- GB
- United Kingdom
- Prior art keywords
- plasma
- substrate
- coating material
- vapour
- aug
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
1,160,895. Coating by vapour deposition. RANK XEROX Ltd. Aug. 12, 1966 [Aug. 25, 1965], No. 36095/66. Heading C7F. A substrate such as Al, brass, glass or plastics is coated with a film comprising one or more of Se, As and Te by transporting the vapour of the coating material in a carrier gas such as hydrogen, ammonia, chlorine or iodine which is excited to the plasma state e. g. g by a H. F. electric field. As shown in Fig. 1 the carrier gas is introduced into reaction chamber 5 from source 11, a plasma is generated by coil 15 supplied with a 30 megacycle alternating current and the Se, As or Te is supplied from source 18. A grounded electrode 17 terminates the plasma at a predetermined point and the coating material is deposited in substrate 19. The process takes place under a pressure of 10 microns to several moms of Hg v m a separate embodiment Fig. 2 (not shown) the coating material is injected into the plasma in vapour form. The alternating current applied is preferably in the R. F. range. The plastics substrate may first be coated with Al prior to depositing Se, As or Te.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US48235465A | 1965-08-25 | 1965-08-25 | |
US77933968A | 1968-11-27 | 1968-11-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1160895A true GB1160895A (en) | 1969-08-06 |
Family
ID=27047253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB36095/66A Expired GB1160895A (en) | 1965-08-25 | 1966-08-12 | Coating Surfaces by Vapour Deposition |
Country Status (4)
Country | Link |
---|---|
US (1) | US3472679A (en) |
DE (1) | DE1621325B2 (en) |
GB (1) | GB1160895A (en) |
NL (1) | NL6611792A (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR95985E (en) * | 1966-05-16 | 1972-05-19 | Rank Xerox Ltd | Glassy semiconductors and their manufacturing process in the form of thin films. |
US3776181A (en) * | 1970-02-02 | 1973-12-04 | Ransburg Electro Coating Corp | Deposition apparatus for an organometallic material |
US3906892A (en) * | 1971-04-27 | 1975-09-23 | Cit Alcatel | Plasma deposition of thin layers of substrated or the like |
FR2236963B1 (en) * | 1973-07-13 | 1977-02-18 | Cit Alcatel | |
US4099969A (en) * | 1974-10-10 | 1978-07-11 | Xerox Corporation | Coating method to improve adhesion of photoconductors |
DE2549405A1 (en) * | 1974-11-05 | 1976-05-06 | Eastman Kodak Co | METHOD OF DEPOSITING A LAYER OF PHOTOSENSITIVE MATERIAL ON A SURFACE |
US4091257A (en) * | 1975-02-24 | 1978-05-23 | General Electric Company | Deep diode devices and method and apparatus |
US4013463A (en) * | 1975-08-15 | 1977-03-22 | Leder Lewis B | Photoreceptor fabrication utilizing AC ion plating |
US4132816A (en) * | 1976-02-25 | 1979-01-02 | United Technologies Corporation | Gas phase deposition of aluminum using a complex aluminum halide of an alkali metal or an alkaline earth metal as an activator |
US4223048A (en) * | 1978-08-07 | 1980-09-16 | Pacific Western Systems | Plasma enhanced chemical vapor processing of semiconductive wafers |
JPS6029295B2 (en) * | 1979-08-16 | 1985-07-10 | 舜平 山崎 | Non-single crystal film formation method |
US4509451A (en) * | 1983-03-29 | 1985-04-09 | Colromm, Inc. | Electron beam induced chemical vapor deposition |
AU563891B2 (en) * | 1983-08-25 | 1987-07-23 | Vsesojuzny Nauchno-Issledovatelsky Instrumentalny Institut | Cutting tool and method of manufacture thereof |
US4500565A (en) * | 1983-09-28 | 1985-02-19 | Ushio Denki Kabushiki Kaisha | Deposition process |
US4505949A (en) * | 1984-04-25 | 1985-03-19 | Texas Instruments Incorporated | Thin film deposition using plasma-generated source gas |
CN85106828B (en) * | 1985-09-10 | 1987-09-09 | 张戈飞 | Process for forming sulphide layer on the surface metal parts and apparatus therefor |
US5707692A (en) * | 1990-10-23 | 1998-01-13 | Canon Kabushiki Kaisha | Apparatus and method for processing a base substance using plasma and a magnetic field |
US6015595A (en) * | 1998-05-28 | 2000-01-18 | Felts; John T. | Multiple source deposition plasma apparatus |
JP3697505B2 (en) * | 2000-03-17 | 2005-09-21 | 国立大学法人東京工業大学 | Thin film formation method |
JP5164107B2 (en) * | 2008-07-01 | 2013-03-13 | 株式会社ユーテック | Plasma CVD apparatus, thin film manufacturing method, and magnetic recording medium manufacturing method |
CN103874316B (en) * | 2014-03-24 | 2016-05-11 | 青岛科技大学 | A kind of design of use for laboratory induction plasma treatment facility |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2501563A (en) * | 1946-02-20 | 1950-03-21 | Libbey Owens Ford Glass Co | Method of forming strongly adherent metallic compound films by glow discharge |
US3024761A (en) * | 1958-07-01 | 1962-03-13 | Ibm | Vacuum evaporation apparatus |
US3108900A (en) * | 1959-04-13 | 1963-10-29 | Cornelius A Papp | Apparatus and process for producing coatings on metals |
US3290567A (en) * | 1960-09-23 | 1966-12-06 | Technical Ind Inc | Controlled deposition and growth of polycrystalline films in a vacuum |
US3310424A (en) * | 1963-05-14 | 1967-03-21 | Litton Systems Inc | Method for providing an insulating film on a substrate |
US3297465A (en) * | 1963-12-31 | 1967-01-10 | Ibm | Method for producing organic plasma and for depositing polymer films |
US3296115A (en) * | 1964-03-02 | 1967-01-03 | Schjeldahl Co G T | Sputtering of metals wherein gas flow is confined to increase the purity of deposition |
US3355371A (en) * | 1964-06-29 | 1967-11-28 | Gen Motors Corp | Method of anodizing a metal in a plasma including connecting said metal in a separate electrical circuit |
US3329601A (en) * | 1964-09-15 | 1967-07-04 | Donald M Mattox | Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial |
US3275412A (en) * | 1965-02-04 | 1966-09-27 | American Cyanamid Co | Production of oxides by plasma process |
-
1966
- 1966-08-12 GB GB36095/66A patent/GB1160895A/en not_active Expired
- 1966-08-22 NL NL6611792A patent/NL6611792A/xx unknown
- 1966-08-23 DE DE1621325A patent/DE1621325B2/en active Pending
-
1968
- 1968-11-27 US US779339A patent/US3472679A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE1621325B2 (en) | 1975-08-07 |
DE1621325A1 (en) | 1971-05-13 |
US3472679A (en) | 1969-10-14 |
NL6611792A (en) | 1967-02-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |