JPS5526681A - Semiconductor device and its manufacturing method - Google Patents
Semiconductor device and its manufacturing methodInfo
- Publication number
- JPS5526681A JPS5526681A JP10023478A JP10023478A JPS5526681A JP S5526681 A JPS5526681 A JP S5526681A JP 10023478 A JP10023478 A JP 10023478A JP 10023478 A JP10023478 A JP 10023478A JP S5526681 A JPS5526681 A JP S5526681A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- layer
- region
- alloy layer
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To avoid a junction-penetration due to Al-Si alloy layer by forming a Si layer by a plasma CVD process at a low temperature less than 400°C in covering an Al-Si wiring layer over a diffusion layer formed in a semiconductor substrate.
CONSTITUTION: A junction region 12 having an opposite conduction mode is formed on a semiconductor substrate 11 to cover the full surface with a SiO2 film 13, an opening is provided on the region 12 to mount an Al wiring electrode 14 over the full surface in contact with the region 12. Subsequently, a lamination is given to the wiring 14 to grow a multi-crystal Si wiring 17, and a wiring having a two- layer construction is formed. In this case, in order to form the wiring 17, a SiH4 gas is activated into a plasma state at a low temperature under 400°C, the wiring 17 is grown on the wiring 14 by using the gas activated. According to such a method, no substantial Al-Si alloy layer 15 is formed between the region 12 and wiring 14 and a penetration of the junction 12 due to the alloy layer 15 can be avoided. Also, an Al-Si alloy layer 16 formed on the wiring 17 can be uniform thickness.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10023478A JPS5526681A (en) | 1978-08-16 | 1978-08-16 | Semiconductor device and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10023478A JPS5526681A (en) | 1978-08-16 | 1978-08-16 | Semiconductor device and its manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5526681A true JPS5526681A (en) | 1980-02-26 |
Family
ID=14268570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10023478A Pending JPS5526681A (en) | 1978-08-16 | 1978-08-16 | Semiconductor device and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5526681A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63159113A (en) * | 1986-12-22 | 1988-07-02 | Yokohama Rubber Co Ltd:The | Pneumatic tire |
-
1978
- 1978-08-16 JP JP10023478A patent/JPS5526681A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63159113A (en) * | 1986-12-22 | 1988-07-02 | Yokohama Rubber Co Ltd:The | Pneumatic tire |
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