JPS6410616A - Method and device for growth of compound semiconductor crystal - Google Patents

Method and device for growth of compound semiconductor crystal

Info

Publication number
JPS6410616A
JPS6410616A JP16634187A JP16634187A JPS6410616A JP S6410616 A JPS6410616 A JP S6410616A JP 16634187 A JP16634187 A JP 16634187A JP 16634187 A JP16634187 A JP 16634187A JP S6410616 A JPS6410616 A JP S6410616A
Authority
JP
Japan
Prior art keywords
substrate
growth
thin film
reactive gas
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16634187A
Other languages
Japanese (ja)
Inventor
Naoki Furuhata
Hironobu Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16634187A priority Critical patent/JPS6410616A/en
Publication of JPS6410616A publication Critical patent/JPS6410616A/en
Pending legal-status Critical Current

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  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To enhance a characteristic of a device by a method wherein the surface of a substrate is etched by making use of a surface chemical reaction of a reactive gas so that an oxide film and a carbon impurity can be removed at a low temperature and that a good re-growth thin film having a defectless and clean interface can be obtained. CONSTITUTION:A reactive gas is supplied to the surface of a III-V compound semiconductor crystal substrate under a high vacuum of less than 10<-3> Torr while a substrate temperature is set at lower than 500 deg.C. A process to epitaxially grow a semicondcutor crystal thin film on this crystal substrate by using a molecular beam is provided. As an apparatus to realize this method, a substrate preparation chamber 1 which is equipped with substrate holders 10 to heat the substrate 3 and with a gas inlet pipe 4 to introduce the reactive gas and which can maintain an ultrahigh vacuum is installed. A growth chamber 6 which is connected to the substrate preparation chamber and which grows the compound semicondcutor crystal thin film epitaxially by using the molecular beam is installed.
JP16634187A 1987-07-02 1987-07-02 Method and device for growth of compound semiconductor crystal Pending JPS6410616A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16634187A JPS6410616A (en) 1987-07-02 1987-07-02 Method and device for growth of compound semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16634187A JPS6410616A (en) 1987-07-02 1987-07-02 Method and device for growth of compound semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS6410616A true JPS6410616A (en) 1989-01-13

Family

ID=15829573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16634187A Pending JPS6410616A (en) 1987-07-02 1987-07-02 Method and device for growth of compound semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS6410616A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0813232A2 (en) * 1996-05-15 1997-12-17 Nec Corporation Method of reducing the amount of carbon in an interface between an epitaxial film and a Si substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0813232A2 (en) * 1996-05-15 1997-12-17 Nec Corporation Method of reducing the amount of carbon in an interface between an epitaxial film and a Si substrate
EP0813232A3 (en) * 1996-05-15 1998-09-02 Nec Corporation Method of reducing the amount of carbon in an interface between an epitaxial film and a Si substrate
US5920795A (en) * 1996-05-15 1999-07-06 Nec Corporation Method for manufacturing semiconductor device

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