JPS6446936A - Growth method of thin film - Google Patents
Growth method of thin filmInfo
- Publication number
- JPS6446936A JPS6446936A JP20390087A JP20390087A JPS6446936A JP S6446936 A JPS6446936 A JP S6446936A JP 20390087 A JP20390087 A JP 20390087A JP 20390087 A JP20390087 A JP 20390087A JP S6446936 A JPS6446936 A JP S6446936A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- reaction chamber
- raw material
- material gas
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To realize the lowering of the temperature of a CVD (chemical vapor growth) reaction and the reduction of gas pressure, and to grow a thin film, which is hardly damaged, by executing pretreatment, in which excitation species are formed by glow discharge in a reaction chamber, before a raw material gas is introduced into the reaction chamber and a film is grown. CONSTITUTION:A gas generating glow discharge is introduced into a reaction chamber 1 before a thin film raw material gas is induced into the reaction chamber 1, and plasma pretreatment in which excitation species are shaped by glow discharge generated by applying high-frequency power from a high-frequency power RF to an electrode 6 in the reaction chamber 1 is executed. The thin film raw material gas is introduced into the reaction chamber 1, and chemical vapor growth is conducted at a temperature and pressure lower than the temperature and pressure of the thermal decomposition of the raw material gas, using active species on the surface of a sample 4 or in the vapor phase generated through plasma pretreatment as a catalyst. Accordingly, a thin film can be deposited in a low-temperature region in which the thin film is not deposited through normal thermal decomposition while the film, which is hardly damaged, can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20390087A JPS6446936A (en) | 1987-08-17 | 1987-08-17 | Growth method of thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20390087A JPS6446936A (en) | 1987-08-17 | 1987-08-17 | Growth method of thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6446936A true JPS6446936A (en) | 1989-02-21 |
Family
ID=16481572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20390087A Pending JPS6446936A (en) | 1987-08-17 | 1987-08-17 | Growth method of thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6446936A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03116833A (en) * | 1989-09-29 | 1991-05-17 | Shin Etsu Handotai Co Ltd | Manufacture of semiconductor substrate |
JPH0790589A (en) * | 1993-09-24 | 1995-04-04 | G T C:Kk | Formation of silicon oxidized film |
KR100275130B1 (en) * | 1997-12-30 | 2001-01-15 | 김영환 | Method for forming conductive line of polycide and apparatus for deposition of low temperature |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5943575A (en) * | 1982-09-02 | 1984-03-10 | Canon Inc | Semiconductor element |
JPS6034013A (en) * | 1983-08-04 | 1985-02-21 | Agency Of Ind Science & Technol | Manufacture of solid thin film |
JPS60147113A (en) * | 1984-01-11 | 1985-08-03 | Canon Inc | Manufacture of silicon film |
JPS6249626A (en) * | 1985-08-29 | 1987-03-04 | Fuji Photo Film Co Ltd | Semiconductor manufacturing equipment |
JPS6269512A (en) * | 1985-09-20 | 1987-03-30 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
JPS62174382A (en) * | 1986-01-27 | 1987-07-31 | Shindengen Electric Mfg Co Ltd | Method and apparatus for depositing metallic alloy from vapor phase |
-
1987
- 1987-08-17 JP JP20390087A patent/JPS6446936A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5943575A (en) * | 1982-09-02 | 1984-03-10 | Canon Inc | Semiconductor element |
JPS6034013A (en) * | 1983-08-04 | 1985-02-21 | Agency Of Ind Science & Technol | Manufacture of solid thin film |
JPS60147113A (en) * | 1984-01-11 | 1985-08-03 | Canon Inc | Manufacture of silicon film |
JPS6249626A (en) * | 1985-08-29 | 1987-03-04 | Fuji Photo Film Co Ltd | Semiconductor manufacturing equipment |
JPS6269512A (en) * | 1985-09-20 | 1987-03-30 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
JPS62174382A (en) * | 1986-01-27 | 1987-07-31 | Shindengen Electric Mfg Co Ltd | Method and apparatus for depositing metallic alloy from vapor phase |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03116833A (en) * | 1989-09-29 | 1991-05-17 | Shin Etsu Handotai Co Ltd | Manufacture of semiconductor substrate |
JPH0790589A (en) * | 1993-09-24 | 1995-04-04 | G T C:Kk | Formation of silicon oxidized film |
KR100275130B1 (en) * | 1997-12-30 | 2001-01-15 | 김영환 | Method for forming conductive line of polycide and apparatus for deposition of low temperature |
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