JPS56169322A - Selective diffusion of boron into silicon - Google Patents
Selective diffusion of boron into siliconInfo
- Publication number
- JPS56169322A JPS56169322A JP7219180A JP7219180A JPS56169322A JP S56169322 A JPS56169322 A JP S56169322A JP 7219180 A JP7219180 A JP 7219180A JP 7219180 A JP7219180 A JP 7219180A JP S56169322 A JPS56169322 A JP S56169322A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- film
- hbo2
- substrate
- selective diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 title abstract 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title 1
- 229910052796 boron Inorganic materials 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910015844 BCl3 Inorganic materials 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
Abstract
PURPOSE:To enable to perform a stabilized selective diffusion of B on an Si substrate using an HBO2 by a method wherein the diffusion mask of two-layer construction consisting of an SiO2 film and an Si3N4 film against HBO2 is used. CONSTITUTION:An SiO2 film 2 is formed on an N type radical Si substrate 1. Then, on this film 2, an Si3N4 film 3 is formed. After a photolithography process has been finished, a diffusion aperture 4 is formed by performing a plasma etching on the films 2 and 3. Then, N2, H2 and O2 are feeded in the heating up process of the substrate 1. Then the HBO2 film 5 is adhered by feeding N2, H2, O2 and BCl3. Then, N2 is feeded, B is diffused and a P<+> diffusion layer 6 is formed. Through these procedures, a stabilized selective diffusion of B can be performed by making use of the diffusion mask having an excellent masking effect for the HBO2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7219180A JPS56169322A (en) | 1980-05-30 | 1980-05-30 | Selective diffusion of boron into silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7219180A JPS56169322A (en) | 1980-05-30 | 1980-05-30 | Selective diffusion of boron into silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56169322A true JPS56169322A (en) | 1981-12-26 |
Family
ID=13482069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7219180A Pending JPS56169322A (en) | 1980-05-30 | 1980-05-30 | Selective diffusion of boron into silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56169322A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59177923A (en) * | 1983-03-28 | 1984-10-08 | Matsushita Electronics Corp | Boron diffusion to semiconductor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4869478A (en) * | 1971-12-22 | 1973-09-20 | ||
| JPS5377465A (en) * | 1976-12-20 | 1978-07-08 | Sanyo Electric Co Ltd | Boron deposition method |
-
1980
- 1980-05-30 JP JP7219180A patent/JPS56169322A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4869478A (en) * | 1971-12-22 | 1973-09-20 | ||
| JPS5377465A (en) * | 1976-12-20 | 1978-07-08 | Sanyo Electric Co Ltd | Boron deposition method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59177923A (en) * | 1983-03-28 | 1984-10-08 | Matsushita Electronics Corp | Boron diffusion to semiconductor |
| JPH0586650B2 (en) * | 1983-03-28 | 1993-12-13 | Matsushita Electronics Corp |
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