JPS57106145A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57106145A
JPS57106145A JP18349080A JP18349080A JPS57106145A JP S57106145 A JPS57106145 A JP S57106145A JP 18349080 A JP18349080 A JP 18349080A JP 18349080 A JP18349080 A JP 18349080A JP S57106145 A JPS57106145 A JP S57106145A
Authority
JP
Japan
Prior art keywords
film
substrate
si3n4
sio2
cvd method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18349080A
Other languages
Japanese (ja)
Inventor
Kanetake Takasaki
Mikio Takagi
Kenji Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18349080A priority Critical patent/JPS57106145A/en
Publication of JPS57106145A publication Critical patent/JPS57106145A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To remove a phenomenon of an SiO2 film to be inserted underneath an Si3N4 film by forming a film having large compressive stress between the Si3N4 film becoming a mask at the time of producing the SiO2 film for isolating between elements and an Si substrate for preventing the invasion of O2 gas. CONSTITUTION:An Si3N4 film 22 formed by plasma CVD method and an Si3N4 film 23 formed by an ordinary CVD method are formed on an Si substrate, and are then patterned. With the films 22, 23 as masks An SiO2 film 24 for isolating between elements is formed on the substrate. In this manner, the film 22 formed by plasma CVD method has large compressive stress and the like properties of the SiO2 film. Accordingly, the substrate is not deformed even if the SiO2 film is not formed under the film 22, 23, no oxygen gas can infiltrate, and bird beaks can be removed.
JP18349080A 1980-12-24 1980-12-24 Manufacture of semiconductor device Pending JPS57106145A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18349080A JPS57106145A (en) 1980-12-24 1980-12-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18349080A JPS57106145A (en) 1980-12-24 1980-12-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57106145A true JPS57106145A (en) 1982-07-01

Family

ID=16136722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18349080A Pending JPS57106145A (en) 1980-12-24 1980-12-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57106145A (en)

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