JPS5715425A - Method for forming semiconductor nitride layer - Google Patents

Method for forming semiconductor nitride layer

Info

Publication number
JPS5715425A
JPS5715425A JP9083780A JP9083780A JPS5715425A JP S5715425 A JPS5715425 A JP S5715425A JP 9083780 A JP9083780 A JP 9083780A JP 9083780 A JP9083780 A JP 9083780A JP S5715425 A JPS5715425 A JP S5715425A
Authority
JP
Japan
Prior art keywords
ions
thickness
nitride layer
film
forming semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9083780A
Other languages
Japanese (ja)
Other versions
JPS6235266B2 (en
Inventor
Kazuo Kajiwara
Tetsunosuke Yanada
Takanori Hayafuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP9083780A priority Critical patent/JPS5715425A/en
Publication of JPS5715425A publication Critical patent/JPS5715425A/en
Publication of JPS6235266B2 publication Critical patent/JPS6235266B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To change a specified region to nitride, by implanting specified ions in a semiconductor layer, thereafter contacting the device with gas including N2, and performing heat treatment. CONSTITUTION:An SiO2 film 2 with a thickness of about 2,000Angstrom is provided on an Si wafer 1. Then Fe ions 3 of 200KeV are implanted at a dosing amount of 1X10<16>/ cm<3>. Under this condition, the flying Rp of Fe ions is 570Angstrom , and all amount of ions are retained in SiO2 2. Then the heat treatment is performed in N2 gas at 1,200 deg.C for specified time. In the conventional method of direct nitriding, the film thickness is about 100Angstrom at best because of the limitation in diffusing speed. In this method, however, the nitride film with the thickness of 100Angstrom or more can be readily formed.
JP9083780A 1980-07-03 1980-07-03 Method for forming semiconductor nitride layer Granted JPS5715425A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9083780A JPS5715425A (en) 1980-07-03 1980-07-03 Method for forming semiconductor nitride layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9083780A JPS5715425A (en) 1980-07-03 1980-07-03 Method for forming semiconductor nitride layer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP19190786A Division JPS6263433A (en) 1986-08-16 1986-08-16 Method for forming semiconductor nitride layer

Publications (2)

Publication Number Publication Date
JPS5715425A true JPS5715425A (en) 1982-01-26
JPS6235266B2 JPS6235266B2 (en) 1987-07-31

Family

ID=14009692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9083780A Granted JPS5715425A (en) 1980-07-03 1980-07-03 Method for forming semiconductor nitride layer

Country Status (1)

Country Link
JP (1) JPS5715425A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54161327A (en) * 1978-03-23 1979-12-20 Bolex Int Sa Camera

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54161327A (en) * 1978-03-23 1979-12-20 Bolex Int Sa Camera

Also Published As

Publication number Publication date
JPS6235266B2 (en) 1987-07-31

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