JPS5762538A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5762538A JPS5762538A JP13747480A JP13747480A JPS5762538A JP S5762538 A JPS5762538 A JP S5762538A JP 13747480 A JP13747480 A JP 13747480A JP 13747480 A JP13747480 A JP 13747480A JP S5762538 A JPS5762538 A JP S5762538A
- Authority
- JP
- Japan
- Prior art keywords
- film
- nitrided silicon
- silicon film
- back surface
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 230000002950 deficient Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 2
- 238000005247 gettering Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To improve the characteristics of a semiconductor device by forming a defective layer in a nitrided silicon film formed on the back surface of a semiconductor substrate and not eliminating the nitrided silicon film until the final treating step, thereby raising the gettering effect. CONSTITUTION:Nitrided silicon films 103 are formed on both front and back surfaces of an SiO2 film 102 on a P type Si substrate 101. Ions are injected to the back surface A of the substrate, thereby forming a defective layer 104. The nitrided silicon film on the back surface is not etched, but the film 103 and the SiO2 film on the front surface are selectively etched. With the films as mask a field oxidized film 106 of MOS device is formed. The MOS device is formed by the ordinary method. The nitrided silicon film with the defective layer 104 is retained to the final stage. In this manner, the gettering effect can be increased, thereby improving the device characteristics.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13747480A JPS5762538A (en) | 1980-10-01 | 1980-10-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13747480A JPS5762538A (en) | 1980-10-01 | 1980-10-01 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5762538A true JPS5762538A (en) | 1982-04-15 |
JPS613090B2 JPS613090B2 (en) | 1986-01-30 |
Family
ID=15199452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13747480A Granted JPS5762538A (en) | 1980-10-01 | 1980-10-01 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5762538A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0251280A2 (en) * | 1986-06-30 | 1988-01-07 | Nec Corporation | Method of gettering semiconductor wafers with a laser beam |
JPH027436A (en) * | 1988-06-24 | 1990-01-11 | Sony Corp | Manufacture of semiconductor device |
JPH04267339A (en) * | 1991-02-21 | 1992-09-22 | Toshiba Corp | Semiconductor substrate and its manufacture |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS523381A (en) * | 1975-06-24 | 1977-01-11 | Western Electric Co | Method of treating semiconductor element |
JPS53126866A (en) * | 1977-04-13 | 1978-11-06 | Hitachi Ltd | Production of semiconductor wafers |
JPS542657A (en) * | 1977-06-08 | 1979-01-10 | Mitsubishi Electric Corp | Manufacture for semiconductor device |
-
1980
- 1980-10-01 JP JP13747480A patent/JPS5762538A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS523381A (en) * | 1975-06-24 | 1977-01-11 | Western Electric Co | Method of treating semiconductor element |
JPS53126866A (en) * | 1977-04-13 | 1978-11-06 | Hitachi Ltd | Production of semiconductor wafers |
JPS542657A (en) * | 1977-06-08 | 1979-01-10 | Mitsubishi Electric Corp | Manufacture for semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0251280A2 (en) * | 1986-06-30 | 1988-01-07 | Nec Corporation | Method of gettering semiconductor wafers with a laser beam |
JPH027436A (en) * | 1988-06-24 | 1990-01-11 | Sony Corp | Manufacture of semiconductor device |
JPH04267339A (en) * | 1991-02-21 | 1992-09-22 | Toshiba Corp | Semiconductor substrate and its manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPS613090B2 (en) | 1986-01-30 |
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