JPS5275177A - Vapor growth device - Google Patents

Vapor growth device

Info

Publication number
JPS5275177A
JPS5275177A JP15149175A JP15149175A JPS5275177A JP S5275177 A JPS5275177 A JP S5275177A JP 15149175 A JP15149175 A JP 15149175A JP 15149175 A JP15149175 A JP 15149175A JP S5275177 A JPS5275177 A JP S5275177A
Authority
JP
Japan
Prior art keywords
growth device
vapor growth
providing
susceptor
jar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15149175A
Other languages
Japanese (ja)
Other versions
JPS5744009B2 (en
Inventor
Toru Hara
Toru Miyake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15149175A priority Critical patent/JPS5275177A/en
Publication of JPS5275177A publication Critical patent/JPS5275177A/en
Publication of JPS5744009B2 publication Critical patent/JPS5744009B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To make a good-quality epitaxial film of less crystal defects at a temperature lower than before by providing a bell-jar which has low thermal conductivity and transmits infrared light in proximity to a susceptor and providing a radiation heating means on the outside.
JP15149175A 1975-12-18 1975-12-18 Vapor growth device Granted JPS5275177A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15149175A JPS5275177A (en) 1975-12-18 1975-12-18 Vapor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15149175A JPS5275177A (en) 1975-12-18 1975-12-18 Vapor growth device

Publications (2)

Publication Number Publication Date
JPS5275177A true JPS5275177A (en) 1977-06-23
JPS5744009B2 JPS5744009B2 (en) 1982-09-18

Family

ID=15519648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15149175A Granted JPS5275177A (en) 1975-12-18 1975-12-18 Vapor growth device

Country Status (1)

Country Link
JP (1) JPS5275177A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60105221A (en) * 1984-10-11 1985-06-10 Hitachi Ltd Gas phase wafer processing apparatus
US4979466A (en) * 1986-12-01 1990-12-25 Hitachi, Ltd. Apparatus for selective deposition of metal thin film
WO1991003075A1 (en) * 1989-08-21 1991-03-07 Fsi International, Inc. Gas substrate processing module
US5002011A (en) * 1987-04-14 1991-03-26 Kabushiki Kaisha Toshiba Vapor deposition apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0454900Y2 (en) * 1987-04-30 1992-12-24
JPH0522311U (en) * 1991-09-05 1993-03-23 義浩 豊田 Labeling device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60105221A (en) * 1984-10-11 1985-06-10 Hitachi Ltd Gas phase wafer processing apparatus
US4979466A (en) * 1986-12-01 1990-12-25 Hitachi, Ltd. Apparatus for selective deposition of metal thin film
US5002011A (en) * 1987-04-14 1991-03-26 Kabushiki Kaisha Toshiba Vapor deposition apparatus
WO1991003075A1 (en) * 1989-08-21 1991-03-07 Fsi International, Inc. Gas substrate processing module

Also Published As

Publication number Publication date
JPS5744009B2 (en) 1982-09-18

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