JPS5559727A - Plasma deposition device - Google Patents

Plasma deposition device

Info

Publication number
JPS5559727A
JPS5559727A JP13163078A JP13163078A JPS5559727A JP S5559727 A JPS5559727 A JP S5559727A JP 13163078 A JP13163078 A JP 13163078A JP 13163078 A JP13163078 A JP 13163078A JP S5559727 A JPS5559727 A JP S5559727A
Authority
JP
Japan
Prior art keywords
electrodes
plasma deposition
wafers
deposition device
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13163078A
Other languages
Japanese (ja)
Inventor
Manabu Araoka
Hideo Sakai
Miyoko Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13163078A priority Critical patent/JPS5559727A/en
Publication of JPS5559727A publication Critical patent/JPS5559727A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To enhance a capacity for processing while reducing a time needed for electrode cleaning, wafers are placed on both electrodes in a capacity type plasma deposition device using parallel flat electrodes. CONSTITUTION:In a capacity type plasma deposition device, high-frequency voltage is applied to parallel flat type electrodes, and silicon nitride or silicon oxide, for example, is deposited on substrates such as silicon wafers 2. In such a case, the wafers 2 are placed on the elctrodes 1a, 1b and heaters 3 are installed outside the elecrodes. The electrodes may be further installed in multiple stages. In this system, all the electrodes are utilized for plasma deposition, resulting in an enhanced process efficiency and a reduced amount of reaction products deposited on the electrodes, thus decreasing the time needed for cleaning.
JP13163078A 1978-10-27 1978-10-27 Plasma deposition device Pending JPS5559727A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13163078A JPS5559727A (en) 1978-10-27 1978-10-27 Plasma deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13163078A JPS5559727A (en) 1978-10-27 1978-10-27 Plasma deposition device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP13715384A Division JPS6063920A (en) 1984-07-04 1984-07-04 Vapor phase treating apparatus

Publications (1)

Publication Number Publication Date
JPS5559727A true JPS5559727A (en) 1980-05-06

Family

ID=15062531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13163078A Pending JPS5559727A (en) 1978-10-27 1978-10-27 Plasma deposition device

Country Status (1)

Country Link
JP (1) JPS5559727A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134431A (en) * 1982-02-04 1983-08-10 Fujitsu Ltd Plasma chemical vapor deposition device
FR2524199A1 (en) * 1982-03-29 1983-09-30 Energy Conversion Devices Inc LUMINESCENT DISCHARGE DEPOSITION APPARATUS INCLUDING A NON-HORIZONTALLY ARRANGED CATHODE
JPS6067673A (en) * 1983-09-22 1985-04-18 Semiconductor Energy Lab Co Ltd Plasma gaseous phase reaction method
JPS61235579A (en) * 1986-01-06 1986-10-20 Semiconductor Energy Lab Co Ltd Method for cleaning inside of reaction furnace
JPH01125530U (en) * 1988-05-12 1989-08-28

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134431A (en) * 1982-02-04 1983-08-10 Fujitsu Ltd Plasma chemical vapor deposition device
JPH029446B2 (en) * 1982-02-04 1990-03-02 Fujitsu Ltd
FR2524199A1 (en) * 1982-03-29 1983-09-30 Energy Conversion Devices Inc LUMINESCENT DISCHARGE DEPOSITION APPARATUS INCLUDING A NON-HORIZONTALLY ARRANGED CATHODE
JPS58174570A (en) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド Glow discharge deposition device containing non-horizontally placed cathode
JPH0468390B2 (en) * 1982-03-29 1992-11-02 Enaajii Konbaajon Debaisesu Inc
JPS6067673A (en) * 1983-09-22 1985-04-18 Semiconductor Energy Lab Co Ltd Plasma gaseous phase reaction method
JPH0344148B2 (en) * 1983-09-22 1991-07-05 Handotai Energy Kenkyusho
JPS61235579A (en) * 1986-01-06 1986-10-20 Semiconductor Energy Lab Co Ltd Method for cleaning inside of reaction furnace
JPH01125530U (en) * 1988-05-12 1989-08-28
JPH0351971Y2 (en) * 1988-05-12 1991-11-08

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