JPS56169333A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56169333A
JPS56169333A JP7203580A JP7203580A JPS56169333A JP S56169333 A JPS56169333 A JP S56169333A JP 7203580 A JP7203580 A JP 7203580A JP 7203580 A JP7203580 A JP 7203580A JP S56169333 A JPS56169333 A JP S56169333A
Authority
JP
Japan
Prior art keywords
semiconductor device
sin film
reaction gas
film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7203580A
Other languages
Japanese (ja)
Other versions
JPS6234139B2 (en
Inventor
Kanetake Takasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7203580A priority Critical patent/JPS56169333A/en
Publication of JPS56169333A publication Critical patent/JPS56169333A/en
Publication of JPS6234139B2 publication Critical patent/JPS6234139B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To eliminate the occurrence of a crack due to a heat treatment in an SiN film of a semiconductor device by making the SiN film contain Ge. CONSTITUTION:A semiconductor substrate 6 is held on the electrode 5 of a plasma CVD device which has a reaction chamber 1, a vacuum evacuating port 2, a reaction gas inlet 3, and confronting electrodes 4, 5, the reaction gas is injected from the electrode 4, and a high frequency voltage is applied between the electrodes 4 and 5. Reaction gas containing NH3, SiH4 and GeH4 is introduced into the device to form an SiN film containing Ge on a substrate 6. Thus, it can prevent the crank of the SiN film due to heat treatment. The thickness of the film can be increased as a display protection film of a semiconductor device in this manner, thereby improving the reliability of the semiconductor device.
JP7203580A 1980-05-29 1980-05-29 Semiconductor device Granted JPS56169333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7203580A JPS56169333A (en) 1980-05-29 1980-05-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7203580A JPS56169333A (en) 1980-05-29 1980-05-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56169333A true JPS56169333A (en) 1981-12-26
JPS6234139B2 JPS6234139B2 (en) 1987-07-24

Family

ID=13477741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7203580A Granted JPS56169333A (en) 1980-05-29 1980-05-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56169333A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7361611B2 (en) 2004-06-29 2008-04-22 International Business Machines Corporation Doped nitride film, doped oxide film and other doped films

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021468U (en) * 1988-06-15 1990-01-08
JPH0224071U (en) * 1988-08-04 1990-02-16

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7361611B2 (en) 2004-06-29 2008-04-22 International Business Machines Corporation Doped nitride film, doped oxide film and other doped films
CN100428424C (en) * 2004-06-29 2008-10-22 国际商业机器公司 Doped nitride film, doped oxide film and other doped films
US7595010B2 (en) 2004-06-29 2009-09-29 International Business Machines Corporation Method for producing a doped nitride film, doped oxide film and other doped films

Also Published As

Publication number Publication date
JPS6234139B2 (en) 1987-07-24

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