JPS56169333A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56169333A JPS56169333A JP7203580A JP7203580A JPS56169333A JP S56169333 A JPS56169333 A JP S56169333A JP 7203580 A JP7203580 A JP 7203580A JP 7203580 A JP7203580 A JP 7203580A JP S56169333 A JPS56169333 A JP S56169333A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- sin film
- reaction gas
- film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To eliminate the occurrence of a crack due to a heat treatment in an SiN film of a semiconductor device by making the SiN film contain Ge. CONSTITUTION:A semiconductor substrate 6 is held on the electrode 5 of a plasma CVD device which has a reaction chamber 1, a vacuum evacuating port 2, a reaction gas inlet 3, and confronting electrodes 4, 5, the reaction gas is injected from the electrode 4, and a high frequency voltage is applied between the electrodes 4 and 5. Reaction gas containing NH3, SiH4 and GeH4 is introduced into the device to form an SiN film containing Ge on a substrate 6. Thus, it can prevent the crank of the SiN film due to heat treatment. The thickness of the film can be increased as a display protection film of a semiconductor device in this manner, thereby improving the reliability of the semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7203580A JPS56169333A (en) | 1980-05-29 | 1980-05-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7203580A JPS56169333A (en) | 1980-05-29 | 1980-05-29 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56169333A true JPS56169333A (en) | 1981-12-26 |
JPS6234139B2 JPS6234139B2 (en) | 1987-07-24 |
Family
ID=13477741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7203580A Granted JPS56169333A (en) | 1980-05-29 | 1980-05-29 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56169333A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7361611B2 (en) | 2004-06-29 | 2008-04-22 | International Business Machines Corporation | Doped nitride film, doped oxide film and other doped films |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH021468U (en) * | 1988-06-15 | 1990-01-08 | ||
JPH0224071U (en) * | 1988-08-04 | 1990-02-16 |
-
1980
- 1980-05-29 JP JP7203580A patent/JPS56169333A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7361611B2 (en) | 2004-06-29 | 2008-04-22 | International Business Machines Corporation | Doped nitride film, doped oxide film and other doped films |
CN100428424C (en) * | 2004-06-29 | 2008-10-22 | 国际商业机器公司 | Doped nitride film, doped oxide film and other doped films |
US7595010B2 (en) | 2004-06-29 | 2009-09-29 | International Business Machines Corporation | Method for producing a doped nitride film, doped oxide film and other doped films |
Also Published As
Publication number | Publication date |
---|---|
JPS6234139B2 (en) | 1987-07-24 |
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