JPS55162339A - Plasma treating device - Google Patents
Plasma treating deviceInfo
- Publication number
- JPS55162339A JPS55162339A JP7153279A JP7153279A JPS55162339A JP S55162339 A JPS55162339 A JP S55162339A JP 7153279 A JP7153279 A JP 7153279A JP 7153279 A JP7153279 A JP 7153279A JP S55162339 A JPS55162339 A JP S55162339A
- Authority
- JP
- Japan
- Prior art keywords
- diameters
- semiconductor wafers
- whose
- substrates
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To grow a uniform films on semiconductor wafers or etch the films equally by a method wherein substrates to be treated are fitted on the both surfaces of electrodes, whose diameters are smaller than the diameters of the substrates, through insulting plates, whose diameters are larger than those of the substrates, and treated.
CONSTITUTION: Plasma working is performed in such a manner that each electrode 12 of a group of an assembling structure formed by mounting insulating plates 11, 11' with diameters larger than the diameters of semiconductor wafers 16, 16' on the both surfaces of the electrodes 12 with diameters smaller than the diameters of the semiconductor wafers is alternately connected to two power source lines 2, 2', and the semiconductor wafers 16, 16' are fitted on the surfaces of the insulating plates 11, 11'. Thus, products are uniformly formed near the surfaces of the semiconductor wafers 16, 16' due to the relationship of the dimensions of the electrodes 12 and the insulating plates 11, 11'. Consequently, films, whose quality is excellent and whose thickness is equal, are grown on the surfaces of the semiconductor wafers to be treated, or the surfaces can uniformly be etched by plasma.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54071532A JPS5845891B2 (en) | 1979-06-07 | 1979-06-07 | plasma processing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54071532A JPS5845891B2 (en) | 1979-06-07 | 1979-06-07 | plasma processing equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55162339A true JPS55162339A (en) | 1980-12-17 |
JPS5845891B2 JPS5845891B2 (en) | 1983-10-13 |
Family
ID=13463433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54071532A Expired JPS5845891B2 (en) | 1979-06-07 | 1979-06-07 | plasma processing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5845891B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57147279A (en) * | 1981-03-09 | 1982-09-11 | Stanley Electric Co Ltd | Field effect transistor using amorphous silicon and manufacture of insulating film for the same transistor |
-
1979
- 1979-06-07 JP JP54071532A patent/JPS5845891B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57147279A (en) * | 1981-03-09 | 1982-09-11 | Stanley Electric Co Ltd | Field effect transistor using amorphous silicon and manufacture of insulating film for the same transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS5845891B2 (en) | 1983-10-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55124235A (en) | Plasma generation method | |
TW340239B (en) | Plasma etching electrode and the manufacturing process | |
EP0328078A3 (en) | Reactive ion etching apparatus | |
JPS55166926A (en) | Dry etching apparatus | |
JPS55162339A (en) | Plasma treating device | |
EP0227839A4 (en) | Method of forming a thin film. | |
JPS6423537A (en) | Plasma processing device | |
JPS5559727A (en) | Plasma deposition device | |
JPS5660021A (en) | Etching for semiconductor device | |
JPS5785978A (en) | Etching jig | |
JPS5492534A (en) | Plasma treating device | |
JPS57120672A (en) | Plasma etching method | |
JPS5740932A (en) | Device for plasma processing | |
JPS54159886A (en) | Production of semiconductor device | |
JPS6445172A (en) | Hydrogen plasma treatment of polycrystalline silicon thin film transistor | |
JPS61214526A (en) | Manufacture of semiconductor device | |
JPS6437056A (en) | Semiconductor device | |
JPS51121262A (en) | Method of manufacturing semiconductor devices | |
JPS54128678A (en) | Forming method of insulation film | |
JPS5694785A (en) | Solar battery device | |
JPS5533090A (en) | Etching method | |
JPS5240962A (en) | Fluorescent tube | |
JPS52139373A (en) | Treating method for compound semiconductor | |
JPS6428810A (en) | Device for forming film | |
JPS56158874A (en) | Plasma etching method |