JPS55162339A - Plasma treating device - Google Patents

Plasma treating device

Info

Publication number
JPS55162339A
JPS55162339A JP7153279A JP7153279A JPS55162339A JP S55162339 A JPS55162339 A JP S55162339A JP 7153279 A JP7153279 A JP 7153279A JP 7153279 A JP7153279 A JP 7153279A JP S55162339 A JPS55162339 A JP S55162339A
Authority
JP
Japan
Prior art keywords
diameters
semiconductor wafers
whose
substrates
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7153279A
Other languages
Japanese (ja)
Other versions
JPS5845891B2 (en
Inventor
Daijiro Kudo
Kiyoshi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP54071532A priority Critical patent/JPS5845891B2/en
Publication of JPS55162339A publication Critical patent/JPS55162339A/en
Publication of JPS5845891B2 publication Critical patent/JPS5845891B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To grow a uniform films on semiconductor wafers or etch the films equally by a method wherein substrates to be treated are fitted on the both surfaces of electrodes, whose diameters are smaller than the diameters of the substrates, through insulting plates, whose diameters are larger than those of the substrates, and treated.
CONSTITUTION: Plasma working is performed in such a manner that each electrode 12 of a group of an assembling structure formed by mounting insulating plates 11, 11' with diameters larger than the diameters of semiconductor wafers 16, 16' on the both surfaces of the electrodes 12 with diameters smaller than the diameters of the semiconductor wafers is alternately connected to two power source lines 2, 2', and the semiconductor wafers 16, 16' are fitted on the surfaces of the insulating plates 11, 11'. Thus, products are uniformly formed near the surfaces of the semiconductor wafers 16, 16' due to the relationship of the dimensions of the electrodes 12 and the insulating plates 11, 11'. Consequently, films, whose quality is excellent and whose thickness is equal, are grown on the surfaces of the semiconductor wafers to be treated, or the surfaces can uniformly be etched by plasma.
COPYRIGHT: (C)1980,JPO&Japio
JP54071532A 1979-06-07 1979-06-07 plasma processing equipment Expired JPS5845891B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54071532A JPS5845891B2 (en) 1979-06-07 1979-06-07 plasma processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54071532A JPS5845891B2 (en) 1979-06-07 1979-06-07 plasma processing equipment

Publications (2)

Publication Number Publication Date
JPS55162339A true JPS55162339A (en) 1980-12-17
JPS5845891B2 JPS5845891B2 (en) 1983-10-13

Family

ID=13463433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54071532A Expired JPS5845891B2 (en) 1979-06-07 1979-06-07 plasma processing equipment

Country Status (1)

Country Link
JP (1) JPS5845891B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57147279A (en) * 1981-03-09 1982-09-11 Stanley Electric Co Ltd Field effect transistor using amorphous silicon and manufacture of insulating film for the same transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57147279A (en) * 1981-03-09 1982-09-11 Stanley Electric Co Ltd Field effect transistor using amorphous silicon and manufacture of insulating film for the same transistor

Also Published As

Publication number Publication date
JPS5845891B2 (en) 1983-10-13

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