JPS58134431A - Plasma chemical vapor deposition device - Google Patents

Plasma chemical vapor deposition device

Info

Publication number
JPS58134431A
JPS58134431A JP1690982A JP1690982A JPS58134431A JP S58134431 A JPS58134431 A JP S58134431A JP 1690982 A JP1690982 A JP 1690982A JP 1690982 A JP1690982 A JP 1690982A JP S58134431 A JPS58134431 A JP S58134431A
Authority
JP
Japan
Prior art keywords
electrode
substrate
plasma cvd
heater
vapor deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1690982A
Other languages
Japanese (ja)
Other versions
JPH029446B2 (en
Inventor
Yoshimi Shiotani
喜美 塩谷
Yasushi Ooyama
泰 大山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1690982A priority Critical patent/JPS58134431A/en
Publication of JPS58134431A publication Critical patent/JPS58134431A/en
Publication of JPH029446B2 publication Critical patent/JPH029446B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Abstract

PURPOSE:To form a plasma CVD film without generating a warpage in a substrate by providing an electrode supporting the substrate and an opposite electrode to the electrode with heaters for heating the substrate. CONSTITUTION:In the parallel plate type plasma CVD device, the heater 8 is set up onto the back of the high-frequency electrode 2 and the electrode 2 is heated, and the substrates 6 are heated indirectly even from upper surfaces. Since the substrates 6 are heated from the support electrode side by the heater 7 and even from the opposite electrode 2 side, the warpage is heardly generated, and yield after the plasma CVD film is formed is excellent.

Description

【発明の詳細な説明】 本発明は半導体製造プロセスの薄膜形成工程で用いられ
るプラズマＯＶＤ、３！ｉ置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a plasma OVD method used in a thin film forming step of a semiconductor manufacturing process. Regarding improvement of i-position.

フラスマＣＶＤｄ７’バイスのパッシペ・−ジョンａｇ
等に低温で形成する為に用いられる。Flasma CVDd7'Vice Passipe - John ag
It is used for forming at low temperature.

プラズマ０ＶＤ装置は、プラズマ発生部、ガス導入部、
真空排気系、治具、電源系、制御系等から構成される。The plasma 0VD device includes a plasma generation section, a gas introduction section,
It consists of a vacuum evacuation system, jig, power supply system, control system, etc.

従来の一４ｉｔ結合型プラズマＣＶＤは第１図に示す如
き構成であり、基板電極１と高周波電極２から構成δれ
、図示しない排気系でガス排気口３からベルジャ４内を
排気しながら、ガス導入口５よりガス會尋入し、基板電
極１と高周波電極２との１−に−周波を印加し、プラズ
マを発生させ、基板電極ｌ上の基＆６ｔ−ヒータ７で加
熱しつつ、基板上に薄膜を形成するものである。A conventional 4-it coupled plasma CVD has a configuration as shown in FIG. Gas is introduced from the inlet 5, a -frequency is applied to the 1- of the substrate electrode 1 and the high-frequency electrode 2, and plasma is generated. It forms a thin film on the surface.

ところで従来の方法は基板電極１Ｆ部に設けたヒータフ
で加熱する為、第２図に要部を示す如く、ウェハの表面
温度が下部表［ｉｉ湿温度り下りウェハがそり大きなス
トレスが生じ、かつウェハ鳩辺がヒータエり離れる７′
ｃめウェハ内のｇ貫が一様でなくなるという欠点があっ
友。By the way, in the conventional method, heating is carried out using a heater provided at the substrate electrode 1F, so as shown in the main part of the substrate electrode 1F, the surface temperature of the wafer is lower than the lower table [ii] The humidity temperature drops, the wafer warps, a large stress occurs, and The wafer edge is separated from the heater edge 7'
The drawback is that the g-holes within the wafer are not uniform.

本発明は上述の点に１みてなされたもので、基板を支持
する支持電極と他方の対向゛−極とに基板加熱用ヒータ
部ｔ″設けたことｔ−％黴とするプラズマＯＶＤ装置ｔ
−提供するものである。The present invention has been made in view of the above-mentioned points, and includes a plasma OVD apparatus which uses a heater section t'' for heating a substrate on a supporting electrode that supports a substrate and the other opposing electrode.
- Provided.

第３図は本発明の一実施例でるる平行平板型プラズマ０
ＶＤ装置の断面図である。FIG. 3 shows an embodiment of the present invention in parallel plate plasma 0.
It is a sectional view of a VD device.

Ａｉｍ波゛−極２の裏面に高周波ＩＥ他極加熱ヒータ８
ｔ−設け、高周波電極を加熱し、間撤的に基板６を加熱
するものである本発明により、基板は基板の支持電極側
と対向する高周波電極側とから加熱されるので、ウェハ
にそりが生ずることが少ない。A high frequency IE other pole heater 8 is placed on the back side of the Aim wave pole 2.
According to the present invention, which heats the high-frequency electrode and heats the substrate 6 intermittently, the substrate is heated from the supporting electrode side of the substrate and the opposite high-frequency electrode side, so that the wafer is not warped. It rarely occurs.

第４図は本開明の他の実施例で、基板ＩＩＬ極１０に−
周波がｌ：ｌＪ加され、対向電極１１がベルジャ１２に
接続され接地電極となっている。また対向電極１１はガ
ス導入管１３となっており、′電極面ムに多数の小孔１
１’が設けられ均一なガス供給を行う。FIG. 4 shows another embodiment of the present invention, in which -
A frequency of 1:1J is applied, and the counter electrode 11 is connected to the bell jar 12 and serves as a ground electrode. Further, the counter electrode 11 is a gas introduction pipe 13, and there are many small holes 1 on the electrode surface.
1' is provided to provide uniform gas supply.

そして、この対向電極１１には、加熱用のヒータ１４が
設けられている。１５．１６はベルジャ１２と基板電極
１０との絶縁を行う絶縁物である。This counter electrode 11 is provided with a heater 14 for heating. 15 and 16 are insulators that insulate the bell jar 12 and the substrate electrode 10.

な２ヒータ用の電源には４周波がかからないように、ヒ
ータ部と電源との接続は高インピーダンスのコイル等を
介して高周波ｔカットして行う。In order to prevent the 4-frequency wave from being applied to the power source for the 2 heaters, the connection between the heater section and the power source is made by cutting off the high frequency wave through a high impedance coil or the like.

本発明によれば、ウェハにそりを生ずることなくプラズ
マＣＶＤ膜の形成を行、うことができ、ウェハを装置か
ら取出す時にも否が生じない。According to the present invention, a plasma CVD film can be formed without causing warpage on the wafer, and no defects will occur when the wafer is taken out from the apparatus.

また、ウェハのそりを生ずること吃ないので、歩′ｆｉ
Ｉり同上に畜与すること大である。In addition, since the wafer does not warp or stutter, the step
It is important to give due consideration to the above.

【図面の簡単な説明】[Brief explanation of the drawing]

霧甲 ｉａ１図は従来のプラズマＣＶＤ装置の断面図、ｗ！、
２図は従来装置を用いた時の要部断面図、第３図は本発
明のプラズマＣＶＤ装置の断面図、第４図は本発明の他
の実施例を示す図である。 ｌ：基板電極、２：対向電極、６：ウエハ、７゜８．１
４ニヒータ。Kiriko ia1 diagram is a cross-sectional view of a conventional plasma CVD device, w! ,
FIG. 2 is a sectional view of a main part when a conventional apparatus is used, FIG. 3 is a sectional view of a plasma CVD apparatus of the present invention, and FIG. 4 is a diagram showing another embodiment of the present invention. l: Substrate electrode, 2: Counter electrode, 6: Wafer, 7°8.1
4 Nihita.

Claims (1)

【特許請求の範囲】[Claims] 基板全支持する支持電極と他方の対向電極とに基板加熱
用ヒータ部を設けたことを４Ｉ砿とするプラズマ０ＶＤ
装置。4I plasma 0VD in which a heater section for heating the substrate is provided on the support electrode that supports the entire substrate and the other counter electrode.
Device.
JP1690982A 1982-02-04 1982-02-04 Plasma chemical vapor deposition device Granted JPS58134431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1690982A JPS58134431A (en) 1982-02-04 1982-02-04 Plasma chemical vapor deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1690982A JPS58134431A (en) 1982-02-04 1982-02-04 Plasma chemical vapor deposition device

Publications (2)

Publication Number Publication Date
JPS58134431A true JPS58134431A (en) 1983-08-10
JPH029446B2 JPH029446B2 (en) 1990-03-02

Family

ID=11929257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1690982A Granted JPS58134431A (en) 1982-02-04 1982-02-04 Plasma chemical vapor deposition device

Country Status (1)

Country Link
JP (1) JPS58134431A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182131A (en) * 1984-02-28 1985-09-17 Sumitomo Electric Ind Ltd Thin film manufacturing device
JPS62165910A (en) * 1986-01-17 1987-07-22 Hitachi Ltd Semiconductor manufacturing equipment
US6450803B2 (en) 1998-01-12 2002-09-17 Tokyo Electron Limited Heat treatment apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50748A (en) * 1973-05-02 1975-01-07
JPS5559727A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Plasma deposition device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50748A (en) * 1973-05-02 1975-01-07
JPS5559727A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Plasma deposition device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182131A (en) * 1984-02-28 1985-09-17 Sumitomo Electric Ind Ltd Thin film manufacturing device
JPS62165910A (en) * 1986-01-17 1987-07-22 Hitachi Ltd Semiconductor manufacturing equipment
US6450803B2 (en) 1998-01-12 2002-09-17 Tokyo Electron Limited Heat treatment apparatus

Also Published As

Publication number Publication date
JPH029446B2 (en) 1990-03-02

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