JPS62142314A - Plasma cvd apparatus - Google Patents
Plasma cvd apparatusInfo
- Publication number
- JPS62142314A JPS62142314A JP28344185A JP28344185A JPS62142314A JP S62142314 A JPS62142314 A JP S62142314A JP 28344185 A JP28344185 A JP 28344185A JP 28344185 A JP28344185 A JP 28344185A JP S62142314 A JPS62142314 A JP S62142314A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gap
- supplied
- power
- cvd apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、非晶質シリコン膜等の薄膜の製造に用いられ
るプラズマCVD装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a plasma CVD apparatus used for manufacturing thin films such as amorphous silicon films.
従来の技術
従来この種のプラズマCVD装置は、第2図に示すよう
な構造になっていた。2. Description of the Related Art Conventionally, this type of plasma CVD apparatus has had a structure as shown in FIG.
すなわち第2図において、反応室8に原料ガス、例えば
シラ/ (5zH4) rゲ/I/ マン(GeH4)
を導入した後、圧力を数Tor rに保ち、高周波電源
7よれ、対向するアース電極3の間で、グロー放電を発
生させ、原料ガスをプラズマ分解し、基板5上に非晶質
シリコンや非晶質ゲルマニウム等の薄膜を堆積させるよ
うになっている。前記電力が供給される電極1の周辺に
は、通常、2fl程度の一定の間隙9を保持してアース
シールド2が付設されておシ、電力が供給される電極1
とアース電極3の空間以外でグロー放電が生じるのを防
止している。That is, in FIG. 2, a raw material gas, for example, silica/(5zH4)rge/I/man(GeH4) is introduced into the reaction chamber 8.
After introducing the gas, the pressure is maintained at several Torr, the high frequency power source 7 is twisted, a glow discharge is generated between the opposing earth electrodes 3, the raw material gas is plasma decomposed, and amorphous silicon and non-crystalline silicon are deposited on the substrate 5. A thin film of crystalline germanium or the like is deposited. Around the electrode 1 to which power is supplied, an earth shield 2 is usually provided with a constant gap 9 of about 2 fl.
This prevents glow discharge from occurring outside the space between the ground electrode 3 and the ground electrode 3.
発明が解決しようとする問題点
しかしこのような従来の構造のものでは、電力が供給さ
れる電極1とアースシールド2との間隙の上部で強い放
電が生じ、原料ガスが例えばシランガス(5ZH4)の
場合には、分解生成物10である非晶質シリコンが7レ
ーク状となって多址に堆積し、間隙をふさいでしまうと
いう問題があった。Problems to be Solved by the Invention However, with such a conventional structure, a strong electric discharge occurs in the upper part of the gap between the electrode 1 to which power is supplied and the earth shield 2, and the raw material gas is e.g. silane gas (5ZH4). In this case, there was a problem in that amorphous silicon, which is a decomposition product 10, formed into seven lakes and was deposited in many places, blocking the gaps.
これは、第3図に示すように、電極が四角形の場合には
、放電が強く集中する四すみ11において特に生じやす
くなっている。このようにして、多帯に堆猪した分解生
成物1oにより間隙がふさがれると、これらを取シ除く
ためのメンテナンスの回数が増え、また分解生成物が導
電性をもつ物質の場合には、投入電力の損失となって、
放電ができなくなったシ、放電条件そのものが異なって
しまうことになる。As shown in FIG. 3, when the electrodes are square, this is particularly likely to occur at the four corners 11 where the discharge is strongly concentrated. In this way, when the gaps are blocked by the decomposition products 1o deposited in many bands, the number of maintenance operations to remove them increases, and if the decomposition products are conductive substances, This results in a loss of input power,
If discharge is no longer possible, the discharge conditions themselves will be different.
そこで、本発明は、このような問題点を解決し、放電生
成物が多量に堆積するのを防止するものである。Therefore, the present invention solves these problems and prevents a large amount of discharge products from accumulating.
問題点を痩決するための手段
前記問題点を解決するための本発明の技術的な手段は、
電力が供給される電極とアースシールドとの間隙に絶縁
物を埋設したものである。Means for solving the problem The technical means of the present invention for solving the problem are:
An insulator is buried in the gap between the electrode to which power is supplied and the earth shield.
作 用
この構造によシ、電力が供給される電極とアースシール
ドとの間隙には、絶縁物が埋設されているため、放電が
生じることが不可能となる。Function: With this structure, an insulator is buried in the gap between the electrode to which power is supplied and the earth shield, making it impossible for electrical discharge to occur.
実施例 以下、本発明の実施例を図面にもとづいて説明する。Example Embodiments of the present invention will be described below based on the drawings.
第1図は本発明の実施例によるプラズマCVD装置の概
略図である。第1図において、12は電力が供給される
電極、13は前記電力が供給される電極の周辺に一定の
間隙20を保ち配置されたアースシールド、14はアー
ス電極、15は基板を加熱するヒーター、16は基板、
17はマツチ77回路、18は高周波電源、19は反応
室であシ、これらは従来例のものと全く同様の構成であ
シ、反応室19内に原料ガスを導入したのち、高周波電
源18よシマッチング回路17を経て、電力が電極12
に供給され、アース電極14との間で、グロー放電を発
生せしめ、ヒーター15によシ加熱された基板16上に
プラズマ分解生成物、非晶質シリコン等が堆積するとい
うしくみである。FIG. 1 is a schematic diagram of a plasma CVD apparatus according to an embodiment of the present invention. In FIG. 1, 12 is an electrode to which power is supplied, 13 is an earth shield placed around the electrode with a certain gap 20, 14 is a ground electrode, and 15 is a heater that heats the substrate. , 16 is a substrate,
17 is a match 77 circuit, 18 is a high-frequency power source, and 19 is a reaction chamber. These have the same configuration as the conventional example. After introducing raw material gas into the reaction chamber 19, the high-frequency power source 18 is connected. Power is supplied to the electrode 12 through the matching circuit 17.
The plasma decomposition products, amorphous silicon, etc. are deposited on the substrate 16 which is heated by the heater 15.
従来例の第2図と構造的に異なる点は、電力が供給され
る電極12とアースシールド13との間隙20に、フッ
素樹脂やセラミック等の絶縁物21を埋設させた点であ
る。こうすることによシ、従来の問題点であった電力が
供給される電極12とアースシールド13との間隙での
放電は解消され、分解生成物によシ間隙がふさがれると
いうことが皆無となった。したがって、メンテナンスの
回数を大幅に減少させることができ、プラズマCVD装
置の稼動率を向上させることができた。The structural difference from the conventional example shown in FIG. 2 is that an insulator 21 such as fluororesin or ceramic is embedded in the gap 20 between the electrode 12 to which power is supplied and the earth shield 13. By doing this, the conventional problem of electrical discharge in the gap between the electrode 12 to which power is supplied and the earth shield 13 is eliminated, and there is no possibility that the gap will be blocked by decomposition products. became. Therefore, the frequency of maintenance can be significantly reduced, and the operating rate of the plasma CVD apparatus can be improved.
さらに、再現性のある信頼性の高いグロー放電を得るこ
とができるようになった。Furthermore, it has become possible to obtain reproducible and highly reliable glow discharge.
発明の効果
以上述べてきたように、本発明によれば安定したグロー
放電を再現性よく得ることができる。またプラズマCV
D装置の稼動率を大幅に向上させることができ、実用上
その効果はきわめて大きいプラズマCVD装置を提供す
るも′のである。Effects of the Invention As described above, according to the present invention, stable glow discharge can be obtained with good reproducibility. Also plasma CV
It is therefore possible to provide a plasma CVD apparatus which can greatly improve the operating rate of the D apparatus and which has a very large practical effect.
第1図は本発明の実施例におけるプラズマCVD装置の
概略図、第2図は従来のプラズマCVD装置の概略図、
第3図は従来のプラズマCVD装置の電極とアースシー
ルドの斜視図である。
12・・・・・・電力が供給される電極、13・・・・
・・アースシールド、14・・・・・・アース電極、I
B・・・・・・ヒーター、16・・・・・・基板、2
o・・・・・・電極とアースシー第2図FIG. 1 is a schematic diagram of a plasma CVD apparatus in an embodiment of the present invention, FIG. 2 is a schematic diagram of a conventional plasma CVD apparatus,
FIG. 3 is a perspective view of an electrode and a ground shield of a conventional plasma CVD apparatus. 12... Electrode to which power is supplied, 13...
...Earth shield, 14...Earth electrode, I
B... Heater, 16... Board, 2
o・・・Electrode and earth sea Figure 2
Claims (1)
給側電極とアースシールドとの間隙部に絶縁物を埋設し
たことを特徴とするプラズマCVD装置。1. A plasma CVD apparatus having a counter electrode, characterized in that an insulator is embedded in a gap between a power supply side electrode and an earth shield.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28344185A JPS62142314A (en) | 1985-12-17 | 1985-12-17 | Plasma cvd apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28344185A JPS62142314A (en) | 1985-12-17 | 1985-12-17 | Plasma cvd apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62142314A true JPS62142314A (en) | 1987-06-25 |
Family
ID=17665582
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28344185A Pending JPS62142314A (en) | 1985-12-17 | 1985-12-17 | Plasma cvd apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62142314A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5031571A (en) * | 1988-02-01 | 1991-07-16 | Mitsui Toatsu Chemicals, Inc. | Apparatus for forming a thin film on a substrate |
US20120298302A1 (en) * | 2011-05-23 | 2012-11-29 | Yaomin Xia | Vacuum plasma pprocessing chamber with a wafer chuck facing downward above the plasma |
-
1985
- 1985-12-17 JP JP28344185A patent/JPS62142314A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5031571A (en) * | 1988-02-01 | 1991-07-16 | Mitsui Toatsu Chemicals, Inc. | Apparatus for forming a thin film on a substrate |
US20120298302A1 (en) * | 2011-05-23 | 2012-11-29 | Yaomin Xia | Vacuum plasma pprocessing chamber with a wafer chuck facing downward above the plasma |
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