JPS54125979A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54125979A JPS54125979A JP3298678A JP3298678A JPS54125979A JP S54125979 A JPS54125979 A JP S54125979A JP 3298678 A JP3298678 A JP 3298678A JP 3298678 A JP3298678 A JP 3298678A JP S54125979 A JPS54125979 A JP S54125979A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- psg
- density
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To avoid the excessive side etching for the plasma etching given to the double-layer film of Si3N4 and PSG by selecting the P density and the pressure ratio between the CF4 and N2 gas to the proper value.
CONSTITUTION: Junction pad 3 exists on SiO2 film 2 of Si substrate 1, and then PSG4 and Si3N45 are laminated. Resist mask 6 is provided on film 5. As the etching speed of PSG caused by the CF4 gas depends on the P density, the P density is selected to 5W12 mole % to secure a higher etching speed to PSG than Si3N4. Thus, the amount of side etching can be easily reduced down to 5μm or less. Otherwise, CF4 is diluted by the N2 gas after etching of Si3N45 with the CF4 gas to continue etching of PSG. In this case, the gas pressure ratio is selected to 5W10 between N2 and CF4, thus reducing the side etching amount down to 5μm or less.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3298678A JPS54125979A (en) | 1978-03-24 | 1978-03-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3298678A JPS54125979A (en) | 1978-03-24 | 1978-03-24 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54125979A true JPS54125979A (en) | 1979-09-29 |
Family
ID=12374190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3298678A Pending JPS54125979A (en) | 1978-03-24 | 1978-03-24 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54125979A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4513026A (en) * | 1980-08-29 | 1985-04-23 | Fujitsu Limited | Method for coating a semiconductor device with a phosphosilicate glass |
JPS60192334A (en) * | 1984-03-13 | 1985-09-30 | Fuji Electric Corp Res & Dev Ltd | Dry etching method |
US5387312A (en) * | 1993-07-09 | 1995-02-07 | Micron Semiconductor, Inc. | High selective nitride etch |
US5756216A (en) * | 1993-07-09 | 1998-05-26 | Micron Technology, Inc. | Highly selective nitride spacer etch |
WO1999010923A1 (en) * | 1997-08-28 | 1999-03-04 | Lam Research Corporation | Method for selective plasma etch |
-
1978
- 1978-03-24 JP JP3298678A patent/JPS54125979A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4513026A (en) * | 1980-08-29 | 1985-04-23 | Fujitsu Limited | Method for coating a semiconductor device with a phosphosilicate glass |
JPS60192334A (en) * | 1984-03-13 | 1985-09-30 | Fuji Electric Corp Res & Dev Ltd | Dry etching method |
US5387312A (en) * | 1993-07-09 | 1995-02-07 | Micron Semiconductor, Inc. | High selective nitride etch |
US5756216A (en) * | 1993-07-09 | 1998-05-26 | Micron Technology, Inc. | Highly selective nitride spacer etch |
WO1999010923A1 (en) * | 1997-08-28 | 1999-03-04 | Lam Research Corporation | Method for selective plasma etch |
US6090304A (en) * | 1997-08-28 | 2000-07-18 | Lam Research Corporation | Methods for selective plasma etch |
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