JPS54125979A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54125979A
JPS54125979A JP3298678A JP3298678A JPS54125979A JP S54125979 A JPS54125979 A JP S54125979A JP 3298678 A JP3298678 A JP 3298678A JP 3298678 A JP3298678 A JP 3298678A JP S54125979 A JPS54125979 A JP S54125979A
Authority
JP
Japan
Prior art keywords
etching
gas
psg
density
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3298678A
Other languages
Japanese (ja)
Inventor
Shinichi Muramatsu
Kiichiro Mukai
Yukiyoshi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3298678A priority Critical patent/JPS54125979A/en
Publication of JPS54125979A publication Critical patent/JPS54125979A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To avoid the excessive side etching for the plasma etching given to the double-layer film of Si3N4 and PSG by selecting the P density and the pressure ratio between the CF4 and N2 gas to the proper value.
CONSTITUTION: Junction pad 3 exists on SiO2 film 2 of Si substrate 1, and then PSG4 and Si3N45 are laminated. Resist mask 6 is provided on film 5. As the etching speed of PSG caused by the CF4 gas depends on the P density, the P density is selected to 5W12 mole % to secure a higher etching speed to PSG than Si3N4. Thus, the amount of side etching can be easily reduced down to 5μm or less. Otherwise, CF4 is diluted by the N2 gas after etching of Si3N45 with the CF4 gas to continue etching of PSG. In this case, the gas pressure ratio is selected to 5W10 between N2 and CF4, thus reducing the side etching amount down to 5μm or less.
COPYRIGHT: (C)1979,JPO&Japio
JP3298678A 1978-03-24 1978-03-24 Manufacture of semiconductor device Pending JPS54125979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3298678A JPS54125979A (en) 1978-03-24 1978-03-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3298678A JPS54125979A (en) 1978-03-24 1978-03-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54125979A true JPS54125979A (en) 1979-09-29

Family

ID=12374190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3298678A Pending JPS54125979A (en) 1978-03-24 1978-03-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54125979A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4513026A (en) * 1980-08-29 1985-04-23 Fujitsu Limited Method for coating a semiconductor device with a phosphosilicate glass
JPS60192334A (en) * 1984-03-13 1985-09-30 Fuji Electric Corp Res & Dev Ltd Dry etching method
US5387312A (en) * 1993-07-09 1995-02-07 Micron Semiconductor, Inc. High selective nitride etch
US5756216A (en) * 1993-07-09 1998-05-26 Micron Technology, Inc. Highly selective nitride spacer etch
WO1999010923A1 (en) * 1997-08-28 1999-03-04 Lam Research Corporation Method for selective plasma etch

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4513026A (en) * 1980-08-29 1985-04-23 Fujitsu Limited Method for coating a semiconductor device with a phosphosilicate glass
JPS60192334A (en) * 1984-03-13 1985-09-30 Fuji Electric Corp Res & Dev Ltd Dry etching method
US5387312A (en) * 1993-07-09 1995-02-07 Micron Semiconductor, Inc. High selective nitride etch
US5756216A (en) * 1993-07-09 1998-05-26 Micron Technology, Inc. Highly selective nitride spacer etch
WO1999010923A1 (en) * 1997-08-28 1999-03-04 Lam Research Corporation Method for selective plasma etch
US6090304A (en) * 1997-08-28 2000-07-18 Lam Research Corporation Methods for selective plasma etch

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